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Laurent J. Lewis

Publications and source records attributed to Laurent J. Lewis.

At least 19 recordsLinked to original sources

Reply to comment by Witte et al. on "Isochoric, isobaric, and ultrafast conductivities of aluminum, lithium,and carbon in the warm dense matter regime", Phys. Rev. E $96$, 053206 (2017)

In Phys. Rev. E, $99$, 047201 (2019) Witte {\it et al.} have commented on our conductivity calculations [Phys. Rev. E $96$, 053206 (2017)] for warm dense matter (WDM). (i) They criticize our use of the spherically-averaged structure factor $S(k)$ for calculations of the static conductivity $σ$ of FCC aluminum - a common approximation for polycrystalline materials. They themselves give no calculations as their method using density-functional theory (DFT) and molecular dynamics (MD) based Kubo-Greenwood (KG) calculations becomes impractical for cold ions. (ii) We are satisfied that Witte et al. no longer claim a factor of $\sim$ 1.5 change in $σ$ on changing the exchange-correlation (XC) functional used. (iii) They have provided computer-intensive calculations of $σ$ for aluminum using DFT-MD-KG simulations, for temperatures $T$ up to 15 eV but using only $N$=64 atoms in the simulation, where as a mixture of ionic species needs a far larger $N$ to be credible. We present multi-species conductivity calculations via a parameter-free DFT theory [Phys. Rev. E. $52$, 5352 (1995)] for 5 eV to 50 eV. (iv) The conductivities obtained from well-converged DFT-MD-KG methods show a significant underestimate of $σ$; this is especially evident for the isochoric conductivity $σ_{\rm ic}$ extrapolating to $\sim3.5\times 10^6$ S/m, i.e, {\it even below} the experimental {\it isobaric} value of 4.1$\times 10^6$ S/m at the melting point, when a value of $\sim 5\times 10^6$ S/m is anticipated.

cond-mat.stat-mech↗

Isochoric, isobaric and ultrafast conductivities of aluminum, lithium and carbon in the warm dense matter (WDM) regime

We study the conductivities $σ$ of (i) the equilibrium isochoric state ($σ_{\rm is}$), (ii) the equilibrium isobaric state ($σ_{\rm ib}$), and also the (iii) non-equilibrium ultrafast matter (UFM) state ($σ_{\rm uf}$) with the ion temperature $T_i$ less than the the electron temperature $T_e$. Aluminum, lithium and carbon are considered, being increasingly complex warm dense matter (WDM) systems, with carbon having transient covalent bonds. First-principles calculations, i.e., neutral-pseudoatom (NPA) calculations and density-functional theory (DFT) with molecular-dynamics (MD) simulations, are compared where possible with experimental data to characterize $σ_{\rm ic}, σ_{\rm ib}$ and $σ_{\rm uf}$. The NPA $σ_{\rm ib}$ are closest to the available experimental data when compared to results from DFT+MD, where simulations of about 64-125 atoms are typically used. The published conductivities for Li are reviewed and the value at a temperature of 4.5 eV is examined using supporting X-ray Thomson scattering calculations. A physical picture of the variations of $σ$ with temperature and density applicable to these materials is given. The insensitivity of $σ$ to $T_e$ below 10 eV for carbon, compared to Al and Li, is clarified.

cond-mat.mtrl-sci↗

Equation of state, phonons, and lattice stability of ultra-fast warm dense matter

Using the two-temperature model for ultrafast matter (UFM), we compare the equation of state, pair-distribution functions $g(r)$, and phonons using the neutral pseudoatom (NPA) model with results from density-functional theory (DFT) codes and molecular-dynamics (MD) simulations for Al, Li and Na. The NPA approach uses state-dependent first-principles pseudopotentials from an `all-electron' DFT calculation with finite-$T$ XCF. It provides pair potentials, structure factors, the `bound' and `free' states, as well as a mean ionization $\bar{Z}$ unambiguously. These are not easily accessible {\it via} DFT+MD calculations which become prohibitive for $T/T_F$ exceeding $\sim 0.6$, where $T_F$ is the Fermi temperature. Hence, both DFT+MD and NPA methods can be compared up to $\sim 8$ eV, while higher $T$ can be addressed ${\it via}$ the NPA. The high-$T_e$ phonon calculations raise the question of UFM lattice stability and surface ablation in thin UFM samples. The ablation forces in a UFM slab are used to define an "ablation time" competing with phonon formation times in thin UFM samples. Excellent agreement for all properties is found between NPA and standard DFT codes, even for Li where a strongly non-local pseudopotential is used in DFT codes. The need to use pseudopotentials appropriate to the ionization state $\bar{Z}$ is emphasized. The effect of finite-$T$ exchange-correlation functional is illustrated via its effect on the pressure and the electron-density distribution at a nucleus.

cond-mat.mtrl-sci↗

A critical assessment of models of pair-interactions and screening used in analyzing recent warm-dense matter (WDM) experiments

Ultra-fast laser experiments yield increasingly reliable data on warm-dense matter (WDM), but rely on entrenched simplistic theoretical models. We re-analyze two topical experiments, avoiding (i) {\it ad hoc} core-repulsion models, (ii) "Yukawa screening" models and (iii) electron-ion equilibrium assumptions. An accurate, rapid density-functional neutral-pseudoatom model coupled to a hyper-netted-chain (HNC) equation with a bridge term is used to compute structure factors, X-Ray scattering, compressibility, phonons and resistivity. Electronic-structure codes are used to confirm the calculations. The Yukawa and core-repulsion models are shown to be misleading.

cond-mat.mtrl-sci↗

Two-temperature pair potentials and phonon spectra for simple metals in the warm dense matter regime

We develop ion-ion pair potentials for Al, Na and K for densities and temperatures relevant to the warm-dense-matter (WDM) regime. Furthermore, we emphasize non-equilibrium states where the ion temperature $T_i$ differs from the electron temperature $T_e$. This work focuses mainly on ultra-fast laser-metal interactions where the energy of the laser is almost exclusively transferred to the electron sub-system over femtosecond time scales. This results in a two-temperature system with $T_e>T_i$ and with the ions still at the initial room temperature $T_i=T_r$. First-principles calculations, such as density functional theory (DFT) or quantum Monte Carlo, are as yet not fully feasible for WDM conditions due to lack of finite-$T$ features, e.g. pseudopotentials, and extensive CPU time requirements. Simpler methods are needed to study these highly complex systems. We propose to use two-temperature pair potentials $U_{ii}(r, T_i,T_e)$ constructed from linear-response theory using the non-linear electron density $n(\mathbf{r})$ obtained from finite-$T$ DFT with a single ion immersed in the appropriate electron fluid. We compute equilibrium phonon spectra at $T_r$ which are found to be in very good agreement with experiments. This gives credibility to our non-equilibrium phonon dispersion relations which are important in determining thermophysical properties, stability, energy-relaxation mechanisms and transport coefficients.

cond-mat.mtrl-sci↗

Replenish and relax: explaining logarithmic annealing in disordered materials

Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of systems, with heat-release measurements. The microscopic mechanism associated with logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower energy configurations.

cond-mat.mtrl-sci↗

Heat conduction across molecular junctions between nanoparticles

We investigate the problem of heat conduction across a molecular junction connecting two nanoparticles, both in vacuum and in a liquid environment, using classical molecular dynamics simulations. In vacuum, the well-known result of a length independent conductance is recovered; its precise value, however, is found to depend sensitively on the overlap between the vibrational spectrum of the junction and the density of states of the nanoparticles that act as thermal contacts. In a liquid environment, the conductance is constant up to a crossover length, above which a standard Fourier regime is recovered.

cond-mat.mtrl-sci↗

Crystallization of amorphous silicon induced by mechanical shear deformations

We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations increase disorder and defect density. At high temperatures, however, the deformations are found to induce crystallization, demonstrating a dynamical transition associated with both shear rate and temperature. The properties of a-Si under shear deformations and the extent at which the system crystallizes are analyzed in terms of the potential energy difference (PED) between the sheared and non-sheared material, as well as the fraction of defects and the number of particles that possess a crystalline environment.

cond-mat.mtrl-sci↗

Amorphous silicon under mechanical shear deformations: shear velocity and temperature effects

Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a systematic increase in the internal strain leading to the rapid appearance of structural defects (5-fold coordinated atoms). The impacts of externally applied strain can be almost fully compensated by increasing the temperature, allowing the system to respond more rapidly to the deformation. In particular, we find opposite power-law relations between the temperature and the shear velocity and the deformation energy. The spatial distribution of defects is also found to strongly depend on temperature and strain velocity. For low temperature or high shear velocity, defects are concentrated in a few atomic layers near the center of the cell while, with increasing temperature or decreasing shear velocity, they spread slowly throughout the full simulation cell. This complex behavior can be related to the structure of the energy landscape and the existence of a continuous energy-barrier distribution.

cond-mat.mtrl-sci↗

The Kinetic Activation-Relaxation Technique: A Powerful Off-lattice On-the-fly Kinetic Monte Carlo Algorithm

Many materials science phenomena, such as growth and self-organisation, are dominated by activated diffusion processes and occur on timescales that are well beyond the reach of standard-molecular dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental timescales. However, most KMC approaches proceed by discretizing the problem in space in order to identify, from the outset, a fixed set of barriers that are used throughout the simulations, limiting the range of problems that can be addressed. Here, we propose a more flexible approach -- the kinetic activation-relaxation technique (k-ART) -- which lifts these constraints. Our method is based on an off-lattice, self-learning, on-the-fly identification and evaluation of activation barriers using ART and a topological description of events. The validity and power of the method are demonstrated through the study of vacancy diffusion in crystalline silicon.

cond-mat.mtrl-sci↗

Interface energies of (100)_{YSZ} and (111)_{YSZ} epitaxial islands on (0001)_{alpha-Al_2O_3} substrates from first principles

We present an ab initio study of the interface energies of cubic yttria-stabilized zirconia (YSZ) epitaxial layers on a (0001)_{alpha-Al_2O_3} substrate. The interfaces are modelled using a supercell geometry and the calculations are carried out in the framework of density-functional theory (DFT) and the local-density approximation (LDA) using the projector-augmented-wave (PAW) pseudopotential approach. Our calculations clearly demonstrate that the (111)_{YSZ} || (0001)_{alpha-Al_2O_3} interface energy is lower than that of (100)_{YSZ} || (0001)_{alpha-Al_2O_3}. This result is central to understanding the behaviour of YSZ thin solid film islanding on (0001)_{alpha-Al_2O_3} substrates, either flat or in presence of defects.

cond-mat.mtrl-sci↗

Stable fourfold configurations for small vacancy clusters in silicon from ab initio calculations

Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and penta-vacancies in silicon. These new configurations consist of combinations of a ring-hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6 eV, respectively, than the ``part of a hexagonal ring'' configurations, believed up to now to be the lowest-energy states.

cond-mat.mtrl-sci↗

Relaxation kinetics in two-dimensional structures

We have studied the approach to equilibrium of islands and pores in two dimensions. The two-regime scenario observed when islands evolve according to a set of particular rules, namely relaxation by steps at low temperature and smooth at high temperature, is generalized to a wide class of kinetic models and the two kinds of structures. Scaling laws for equilibration times are analytically derived and confirmed by kinetic Monte Carlo simulations.

cond-mat.mtrl-sci↗

Core-level spectroscopy of Si/SiO_2 quantum wells: evidence for confined states

We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are compared with the bulk silicon spectrum. In the Si quantum wells, it is found that the conduction band minimum and the low-lying peaks undergo a blue shift while all higher peaks remain unshifted. The experimental results are supported by calculations using recent first-principles structural models for Si/SiO_2 superlattices. The experimental results suggest that all conduction states up to a given conduction band offset become confined and blue-shifted while those at higher energies are not confined and undergo no shift. These results provide unambiguous evidence that the visible-light emitting properties of Si/SiO_2 structures depend strongly on electron confinement effects.

cond-mat.mtrl-sci↗

Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interface layer about 1.60 Åthick. Bandstructure and optical-absorption calculations at the Fermi Golden rule level are used to demonstrate that increasing confinement leads to (a) direct bandgaps (b) a blue shift in the spectrum, and (c) an enhancement of the absorption intensity in the threshold-energy region. Some aspects of this behaviour appear not only in the symmetry direction associated with the superlattice axis, but also in the orthogonal plane directions. We conclude that, in contrast to Si/Ge, Si/SiO$_2$ superlattices show clear optical enhancement and a shift of the optical spectrum into the region useful for many opto-electronic applications.

cond-mat.mtrl-sci↗

Point defects in models of amorphous silicon and their role in structural relaxation

We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects can be defined in the amorphous solid, showing up as anomalies in the valence-charge/Voronoi-volume relation. The changes in the radial distribution functions that take place during annealing are shown to be in close agreement with recent, highly-accurate x-ray diffraction measurements. Our calculations provide strong evidence that structural relaxation in a-Si proceeds by the mutual annihilation of vacancies and interstitials, i.e., local structural changes rather than an overall relaxation of the network.

cond-mat.mtrl-sci↗

Structural properties of silicon dioxide thin films densified by medium-energy particles

Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD) scenario. We compare the structures resulting from the deposition of near-thermal (1 eV) SiO$_{2}$ particles to those obtained with increasing fraction of 30 eV SiO$_{2}$ particles. Our results show that there is an energy interval - between 12 and 15 eV per condensing SiO$_2$ unit on average - for which the growth leads to a dense, low-stress amorphous structure, in satisfactory agreement with the results of low-energy ion-beam experiments. We also find that the crossover between low- and high-density films is associated with a tensile to compressive stress transition, and a simultaneous healing of structural defects of the {\em a-}SiO$_2$ network, namely three- and four-fold rings. It is observed, finally, that densification proceeds through significant changes at intermediate length scales (4--10 Å), leaving essentially unchanged the ``building blocks'' of the network, viz. the Si(O$_{1/2}$)$_{4}$ tetrahedra. This latter result is in qualitative agreement with the mechanism proposed to explain the irreversible densification of amorphous silica recovered from high pressures ($\sim$ 15--20 GPa).

cond-mat.mtrl-sci↗

Molecular-dynamics thermal annealing model of laser ablation of silicon

A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the microscopic processes which result from the interaction of a 308 nm, 10 ps, Gaussian pulse with a Si(100) substrate has been embedded into a molecular-dynamics scheme. This was accomplished by explicitly accounting for carrier-phonon scattering and carrier diffusion. Below the predicted threshold fluence for ablation, $F_{th}=0.25 \text{J/cm}^{2}$, a surface breathing mode indicates that the solid restores internal equilibrium by the generation of pressure waves. Above $F_{th}$, our simulations reveal that matter removal is triggered by subsurface superheating effects: intense heating of the material leads to the thermal confinement of the laser-deposited energy. As a result, the material is overheated up to a temperature corresponding to the critical point of silicon and a strong pressure gradient builds up within the absorbing volume. At the same time, diffusion of the carriers into the bulk leads to the development of a steep temperature gradient beneath the surface. Matter removal is subsequently driven by the relaxation of the pressure gradient: large pieces --- several atomic layers thick --- of molten material are expelled from the surface with initial axial velocities of $\sim 1000 \text{m/s}$, their ejection following the nucleation of voids beneath the surface.

cond-mat.mtrl-sci↗