arXiv subjects

Laurent Pedesseau

Publications and source records attributed to Laurent Pedesseau.

12 recordsLinked to original sources

arXiv2026

III-V antiphase boundaries are not generated by Si or Ge substrate step edges

We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine key aspects including wetting behavior, atomic configurations at the hetero-interface, substrate passivation, and the stability of antiphase boundaries (APBs). By synthesizing these findings with pioneering studies, we propose a refined description of antiphase boundaries formation. Our analysis shows that hetero-interface formation is dictated by substrate terrace reconstruction, demonstrating that APBs are not generated at monoatomic step edges. This generalized III-V/IV growth framework provides new insights for the integration of III-V semiconductors on group-IV platforms and, more broadly, for valence-mismatched heteroepitaxy.

cond-mat.mtrl-sci↗

arXiv2026

Empirical approaches to Fröhlich excitonic polarons in polar semiconductors

The excitonic correlation between electron and hole and these carriers' interactions with underlying crystal lattice govern the opto-electronic response of semiconductors. The latter is dominated in ionic crystals by the Fröhlich interaction corresponding to the long-range electric field generated by polar phonons. Theoretical description of complex interplay of these two effects, excitonic and polaronic, has been a formidable challenge. The present paper reviews the physics of Fröhlich excitonic polarons from the point of view of empirical approaches and supplements it with a few original developments. At first, we review the models for excitonic polarons in ionic semiconductors built analogously to Lee-Low-Pines (LLP) model for free polarons, and later extended by Pollman and Büttner (PB). These models have been applied in past to the case of weakly interacting polarons (e.g. GaAs). We consider their applicability to ionic solids such as TlCl or 3D lead halide perovskites, where electron-hole correlations are relatively stronger. In these compounds, electrons and holes have almost equal effective masses, which allows us to derive a new analytical expressions of PB effective interaction potential. The refined Kane approach to PB's model is shown to (i) bridge the regime between weakly interacting polarons and excitonic polarons with strong electron-hole correlations and (ii) recover the LLP model for free polarons in the limit of vanishing correlation. Various developments carried out in this paper also include extension of Kane and PB's semi-empirical models to incorporate Fröhlich-like interaction with multiple polar phonons, essential for reconciliation of experimental observations in multi-atom systems. In the end, we discuss the relation of the empirical approaches with ab initio methods and provide an outlook of their application to lower-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2026

The impact of interfacial chemistry on the band offset of GaAs/Ga$_2$O$_3$ heterostructures

Ga$_2$O$_3$/GaAs heterojunctions are emerging as promising candidates for next-generation power electronics, photonics, and energy devices, leveraging the high breakdown voltage and thermal stability of Ga$_2$O$_3$ alongside the mature technology, high hole mobility, and higher refractive index of GaAs. The efficiency of these devices depends strongly on the band alignment between the two materials, however both type-I and type-II alignment have been reported in the literature for these heterostructures. To address this ambiguity, we use hybrid density functional theory to systematically investigate the band alignment at GaAs/Ga$_2$O$_3$ interfaces, focusing on the role of interface chemistry. By considering Ga-O-, As-, and As-O-rich interfaces both in amorphous and crystalline Ga$_2$O$_3$ phases, we demonstrate that interface stoichiometry determines the alignment type: Ga-O-rich interfaces exhibit type-II alignment with large valence band offsets (~3.1 eV), while As-rich and As-O-rich interfaces favor type-I alignment with reduced offsets (~2.3-2.6 eV). These trends are attributed to interface dipole formation driven by bonding configuration. Our findings provide insight into the relationship between chemistry and band alignment in GaAs/Ga$_2$O$_3$ heterostructures, enabling targeted optimization for specific device applications.

cond-mat.mtrl-sci↗

arXiv2026

Roadmap for electronic structure, anharmonicity, and electron-phonon calculations in locally disordered inorganic and hybrid halide perovskites

The role of data in modern materials science becomes more valuable and accurate when effects such as electron-phonon coupling and anharmonicity are included, providing a more realistic representation of finite-temperature material behavior. Furthermore, positional polymorphism, characterized by correlated local atomic disorder usually not reported by standard diffraction techniques, is a critical yet underexplored factor in understanding the electronic structure and transport properties of energy-efficient materials, like halide perovskites. In this manuscript, we present a first-principles methodology for locally disordered (polymorphous) cubic inorganic and hybrid halide perovskites, rooted in the special displacement method, that offers a systematic and alternative approach to molecular dynamics for exploring finite-temperature properties. By enabling a unified and efficient treatment of anharmonic lattice dynamics, electron-phonon coupling, and positional polymorphism, our approach generates essential data to predict temperature-dependent phonon properties, free energies, band gaps, and effective masses. Designed with a high-throughput spirit, this framework has been applied across a range of inorganic and hybrid halide perovskites: CsPbI3, CsPbBr3, CsSnI3, CsPbCl3, MAPbI3, MAPbBr3, MASnI3, MAPbCl3, FAPbI3, FAPbBr3, FASnI3, and FAPbCl3. We provide a comprehensive comparison between theoretical and experimental results and we systematically uncover trends and insights into their electronic and thermal behavior. For all compounds, we demonstrate strong and consistent correlations between local structural disorder, band gap openings, and effective mass enhancements.

cond-mat.mtrl-sci↗

arXiv2026

Electron-phonon couplings in polymorphous crystals

Positional polymorphism in solids refers to locally disordered unit cells that, on average, reproduce the high-symmetry structures observed in diffraction experiments. Standard theories of electron-phonon interactions fail to describe the temperature-dependent electronic structure of such polymorphous systems. Hybrid halide perovskites are a prime example, where configurational entropy from both polymorphism and molecular disorder plays a central role. Here we generalize the special displacement method to polymorphous crystals, providing an efficient ab initio framework for electron-phonon couplings without resorting to molecular dynamics. We resolve long-standing discrepancies in hybrid halide perovskite physics, including temperature-dependent anharmonic phonons and band gaps. Our approach provides a practical route to link local disorder, configurational entropy, and electron-phonon interactions, with applicability across diverse material classes, from optoelectronics and ferroelectrics to thermoelectrics.

cond-mat.mtrl-sci↗

arXiv2025

Efficient absolute interface energy calculations for heterostructures: Synergy between localized basis sets and surface passivation techniques

Heterostructures combining diverse physico-chemical properties are increasingly in demand for a wide range of applications in modern science and technology. However, despite their importance in materials science, accurately determining absolute interface energies remains a major challenge. Here, we present a computationally efficient framework for determining interface energies by incorporating a surface passivation technique, demonstrated using pseudo H passivation with a localized basis set method and an explicit chemical potential. This framework is applied to calculate absolute interface energies and analyze the electronic properties of quasi lattice matched and lattice mismatched III and V on Si interfaces, with results compared to conventional reconstructed surface calculations. By combining localized basis sets with surface passivation techniques, this framework allows for accurate estimation of absolute interface energies in heterogeneous material systems. This approach effectively addresses issues associated with surface reconstructions while significantly reducing computational costs within the framework of density functional theory, and moreover offers considerable potential for calculating interface energies across diverse material systems.

cond-mat.mtrl-sci↗

arXiv2025

Strong and Engineerable Optical Anisotropy in Easily Integrable Epitaxial SrO(SrTiO 3 ) N Ruddlesden--Popper Thin Layers

Optical anisotropy is a key property for numerous photonic devices. However, bulk anisotropic materials suitable for such applications remain relatively scarse and are often challenging to synthesize as thin films. Additionally, the optical losses as well as the complex structuration of anisotropic metamaterials hinder their integrability in photonic devices. Based on ellipsometry measurements coupled with reflectance, it is demonstrated here that Ruddlesden-Popper (RP) SrO(SrTiO 3 ) N phases (STO-RP N ), epitaxial thin films composed of a SrTiO 3 lattice periodically interrupted by one SrO atomic plane every N unit cells, exhibit pronounced dichroism and birefringence over a broad spectral range. Notably, this anisotropy is tunable by adjusting the RP order N. In contrast to most other anisotropic materials reported in the literature, STO-RP N thin layers can be fabricated using industry-standard growth processes. As it can be epitaxially grown on Si and GaAs using SrTiO 3 templates, the work paves the way for their compact integration on these photonic platforms.

cond-mat.mtrl-sci↗

arXiv2025

Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments

Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material. This method uses both reconstructed surface and interface absolute energies, as determined by density functional theory, to infer the morphology and wetting properties of Volmer-Weber islands over the whole range of accessible chemical potentials. The predicted equilibrium shapes of GaP crystals heterogeneously grown on Si, are found to be in good agreements with experimental observations performed by Transmission Electron Microscopy. Such method provides a tool for optimization of hetero-structured, multifunctional and smart materials and devices.

cond-mat.mtrl-sci↗

arXiv2025

Computational assessment of non-polar and polar GaP terminations for photoelectrochemical water splitting

With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a well-established semiconductor with suitable band edge positions that has already been successfully employed in photoelectrochemical solar cells. However, to utilize it as efficiently as possible, a proper understanding of its properties when interfaced with water is required, and this is currently lacking. In this work we use ab initio molecular dynamics simulations to study the properties of the aqueous interfaces of various GaP non-polar (110) and polar (001) terminations. We calculate their band alignment with respect to the standard hydrogen electrode potential and investigate their interfacial structural properties. Based on these properties we assess the capability of the various terminations to catalyze the reactions associated with water splitting and propose approaches for improving the performance of GaP for application in PECs.

cond-mat.mtrl-sci↗

arXiv2025

Flexible and Efficient Semi-Empirical DFTB Parameters for Electronic Structure Prediction of 3D, 2D Iodide Perovskites and Heterostructures

Density Functional Tight-Binding (DFTB), an approximative approach derived from Density Functional Theory (DFT), has the potential to pave the way for simulations of large periodic or non-periodic systems. We have specifically tailored DFTB parameters to enhance the accuracy of electronic band gap calculations in both 3D and 2D lead-iodide perovskites, at a significantly reduced computational cost relative to state-of-the-art ab initio calculations. Our electronic DFTB parameters allow computing not only the band gap but also effective masses of perovskite materials with reasonable accuracy compared to existing experimental data and state-of-the-art DFT calculations. The electronic band structures of vacancy-ordered and, lead- and iodide- deficient perovskites are also explored. Additionally, we demonstrate the efficiency of DFTB in computing electronic band alignments in perovskite heterostructures. The DFTB-based approach is anticipated to be beneficial for studying large-scale systems such as heterostructures and nanocrystals.

cond-mat.mtrl-sci↗

arXiv2014

First principles study of a sodium borosilicate glass-former I: The liquid state

We use ab initio simulations to study the static and dynamic properties of a sodium borosilicate liquid with composition 3Na_2O-B_2O_3-6SiO_2, i.e. a system that is the basis of many glass-forming materials. In particular we focus on the question how boron is embedded into the local structure of the silicate network liquid. From the partial structure factors we conclude that there is a weak nanoscale phase separation between silicon and boron and that the sodium atoms form channel-like structures as they have been found in previous studies of sodo-silicate glass-formers. Our results for the X-ray and neutron structure factor show that this feature is basically unnoticeable in the former but should be visible in the latter as a small peak at small wave-vectors. At high temperatures we find a high concentration of three-fold coordinated boron atoms which decreases rapidly with decreasing T, whereas the number of four-fold coordinated boron atoms increases. Therefore we conclude that at the experimental glass transition temperature most boron atoms will be four-fold coordinated. We show that the transformation of [3]B into [4]B with decreasing T is not just related to the diminution of non-bridging oxygen atoms as claimed in previous studies, but to a restructuration of the silicate matrix. The diffusion constants of the various elements show an Arrhenius behavior and we find that the one for boron has the same value as the one of oxygen and is significantly larger than the one of silicon. This shows that these two network formers have rather different dynamical properties, a result that is also confirmed from the time dependence of the van Hove functions. Finally we show that the coherent intermediate scattering function for the sodium atoms is very different from the incoherent one and that it tracks the one of the matrix atoms.

cond-mat.dis-nn↗

arXiv2014

First principles study of a sodium borosilicate glass-former II: The glass state

We use ab initio simulations to investigate the properties of a sodium borosilicate glass of composition 3Na_2O-B_2O_3-6SiO_2. We find that the broadening of the first peak in the radial distribution functions g_BO(r) and g_BNa(r) is due to the presence of trigonal and tetrahedral boron units as well as to non-bridging oxygen atoms connected to BO_3 units. In agreement with experimental results we find that the [3]B units involve a significant number of non-bridging oxygens whereas the vast majority of [4]B have only bridging oxygens. We determine the three dimensional distribution of the Na atoms around the [3]B and [4]B units and use this information to explain why the sodium atoms associated to the latter share more oxygen atoms with the central boron atoms than the former units. From the distribution of the electrons we calculate the total electronic density of states as well its decomposition into angular momentum contributions. The vibrational density of states shows at high frequencies a band that originates from the motion of the boron atoms. Furthermore we show that the [3]B and [4]B units give rise to well defined features in the spectrum which thus can be used to estimate the concentration of these structural entities. The contribution of [3]B can be decomposed further into symmetric and asymmetric parts that can also be easily identified in the spectrum. We show that certain features in the spectrum can be used to obtain information on the type of atom that is the second nearest neighbor of a boron in the [4]B unit. We calculate the average Born charges on the bridging and non-bridging oxygen atoms and show that these depend linearly on the angle between the two bonds and the distance from the connected cation, respectively. Finally we have calculated the frequency dependence of the dielectric function as well as the absorption spectra.

cond-mat.dis-nn↗