arXiv subjects

Laurent Vivien

Publications and source records attributed to Laurent Vivien.

At least 19 recordsLinked to original sources

arXiv2026

Topological photonic cavities based on dissimilar Bragg gratings

Topological photonic cavities offer a powerful route to robust optical confinement and enhanced light-matter interactions. Interface states that emerge at the boundary between one-dimensional periodic structures with distinct topological phases, enable cavities with ultra-small mode volumes and intrinsic protection against disorder. Existing implementations typically create the trivial and topological phases by redefining the unit cell on either side of the cavity, so that both periodic structures share the same band structure. This constraint limits design flexibility and the range of accessible devices. Here we introduce a fundamentally different strategy for realizing topological cavities based on combining periodic waveguides with distinct band structures. By exploiting bandgap closing and band inversion in Bragg gratings, we independently control the topological phase and bandgap width of each structure. We experimentally realize silicon topological cavities formed by two different Bragg gratings without period shifting, and observe topological modes despite significant differences between the two gratings. Our results establish a new route to topological photonic cavity design, demonstrating that band inversion between dissimilar Bragg gratings enables cavity formation beyond symmetric constraints and provides a mechanism to engineer optical confinement via mirror asymmetry.

physics.optics↗

arXiv2026

Boundary-dominated optomechanics in silicon metamaterial membranes

Stimulated Brillouin scattering in integrated photonic waveguides enables coherent coupling between optical photons and gigahertz acoustic phonons, providing a powerful mechanism for on-chip microwave photonics and opto-acoustic signal processing. Despite theoretical predictions of ultra-strong Brillouin interactions arising from enhanced light-sound coupling at device boundaries, most state-of-the-art integrated demonstrations remain governed by bulk photoelastic effects. This limitation stems from trade-offs between optical loss, interaction with waveguide boundaries and accessible phonon frequencies associated with the use of transverse-electric optical modes coupled to horizontally breathing mechanical modes. Here we demonstrate a new approach based on transverse-magnetic optical modes coupled to vertically breathing mechanical modes in suspended silicon membranes engineered with subwavelength metamaterial claddings. In this geometry, the interaction is dominated by the moving-boundary effect occurring at smooth top and bottom interfaces, while the phonon frequency is set primarily by the membrane thickness rather than its width. We observe forward Brillouin interactions at a record frequency of 12 GHz with a gain of 7200 W$^{-1}$ m$^{-1}$ and a mechanical quality factor of 620, yielding the highest Brillouin gain-to-quality-factor ratio reported in silicon waveguides. The devices exhibit net Brillouin amplification in millimeter-scale waveguides with pump powers below 15 mW, establishing a scalable platform for high-frequency integrated opto-acoustic signal processing.

physics.optics↗

arXiv2026

Germanium-Based Mid-Infrared Photonics

The mid-infrared (mid-IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Ge-based photonic integrated circuits in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological substances. Here we review the motivations and the recent developments in this field, from the different material platforms to active and nonlinear devices. We also discuss a few demonstrations of sensing that have already been conducted, attesting the potential applications of such devices. Finally, we conclude by discussing the challenges that have to be solved to transition from lab demonstrations to practical industrial devices.

physics.optics↗

arXiv2025

High-resolution broadband characterization of resonance dispersion in an optical microresonator

Accurate knowledge of the uneven free spectral range of an optical microresonator, which provides direct insight into group velocity dispersion, is essential for understanding and controlling Kerr frequency comb dynamics. In this work, we present a simple and highly precise method formeasuring the free spectral range over a 5 THz bandwidth in silicon nitride microresonators, leveraging a wavemeter with 0.4 MHz resolution. Our fully fibered plug-and-play experimental setup enables the accurate extraction of resonance frequencies. By carefully analyzing the spectral position of each resonance, we measure both second- and third-order free spectral range expansion coefficients. This approach offers a robust and accessible tool for dispersion characterization in integrated photonic circuits, paving the way for next-generation of Kerr comb sources and quantum photonic technologies.

physics.optics↗

arXiv2025

Dispersion engineered AlGaAs-on-insulator nanophotonics by distributed feedback

Technological advances in the fabrication of nanophotonic circuits have driven the scientific community to increasingly focus on the precise tailoring of their key optical properties, over a broadband spectral domain. In this context, the modulation of the local refractive index can be exploited to customize an effective reflectivity by the use of distributed Bragg mirrors, enabling the on-chip integration of Fabry-Pérot resonators. The resulting cavity length is strongly wavelength-dependent, offering practical solutions to the growing demand of dispersion engineering. Owing to their typically high core-to-cladding refractive index contrast and exceptional nonlinear properties, III-V semiconductor-based platforms represent promising candidates for the fabrication of Bragg reflectors. In this work, we propose an AlGaAs-on-insulator linear resonator based on distributed Bragg mirrors. We discuss the first experimental demonstration of a systematic, shape-constrained inverse design technique which tailors a prescribed dispersion profile, showing a strong agreement between simulations and measurements. In perspective, the proposed approach offers an efficient and general response to the challenge of dispersion engineering in integrated optical circuits.

physics.optics↗

arXiv2025

Stimulated Forward Brillouin Scattering in Subwavelength Silicon Membranes

Brillouin scattering enables efficient and coherent conversion between optical photons and gigahertz-frequency phonons. Integrated circuits that harness this nonlinear interaction have immense potential for signal processing, quantum transduction, and sensing applications. However, achieving strong overlap and tight confinement of optical and mechanical modes in silicon nanophotonic waveguides remains a significant challenge. Here, we propose and demonstrate a novel strategy that enables independent control of optical and mechanical modes in periodically segmented silicon waveguides. Our approach combines two distinct periodic lattices: one with a period shorter than half of the optical wavelength, providing light guiding by metamaterial-induced index contrast, and another that creates a complete phononic bandgap confining acoustic modes. This dual-lattice strategy opens new degrees of freedom to optimize optomechanical confinement and coupling simultaneously. Based on this approach, we experimentally demonstrate remarkably high Brillouin gain of $G_\mathrm{B}=2673$ W$^{-1}$m$^{-1}$, resulting in a Stokes gain of 3 dB and an anti-Stokes loss of 4 dB with 6.4 MHz mechanical linewidth. These results illustrate the potential of subwavelength silicon metamaterials for engineering on-chip optomechanical interactions.

physics.optics↗

arXiv2025

Single-layer silicon metalens for broadband achromatic focusing and wide field of view

Achieving simultaneous broadband achromatic focusing and a wide field of view remains a significant challenge for metalenses. In this work, we begin with a quadratic phase profile, enabling full field-of-view designs, and apply dispersion engineering to minimize variations of the focal length across wavelengths, thereby substantially reducing both longitudinal and transverse chromatic aberrations. This is accomplished using only the propagation phase in waveguide-like rectangular meta-atoms, without relying on geometric phase contributions. The fabricated singlet metalens experimentally demonstrates a field of view of 86{\textdegree}, along with a tenfold reduction in focal length variations with wavelength compared to a conventional quadratic metalens, achieving a measured relative shift as low as 1.3% across the 1.5 $μ$m - 1.6 $μ$m range (limited by our experimental setup). This improvement also leads to a twofold increase in focusing efficiency relative to the reference metalens. These experimental results validate the effectiveness of our design strategy in simultaneously enhancing the operational bandwidth and field of view of metalenses. The demonstrated performance can directly benefit beam steering applications in the near-infrared wavelength range and provides a path toward achromatic, wide field-of-view metalenses in the visible range for imaging systems

physics.optics↗

arXiv2025

Multi-dimensional frequency-bin entanglement-based quantum key distribution network

Quantum networks enhance quantum communication schemes and link multiple users over large areas. Harnessing high dimensional quantum states - i.e. qu-d-its - allows for a denser transfer of information with increased robustness to noise compared to qubits. Frequency encoding enables access to such qu-d-its at telecom wavelengths, while manipulating quantum information with off-the-shelf fibered devices. We use a low free spectral range silicon microresonator to generate Bell states of dimension d=2 (qubits) and d=3 (qutrits) via spontaneous four wave mixing, to implement and optimize a multi-dimensional frequency-bin entanglement-based quantum key distribution network. We tune the source (via pump power), the signal processing (via coincidence window size) and qu-d-it encoding (d=2 or 3) using a single fibered hardware based on Fourier-transform pulse shaping and electro-optic modulation depending on interconnection lengths. We achieve secure key rates of 1374 bit/s with qutrits, and estimate the communication range to 295 km with qubits. We access up to 80 frequency modes, resulting in 21 quantum channels, that provide stable communication over more than 21 hours. We demonstrate a competitive communication range in a multi-dimensional entanglement-based quantum key distribution network that lays the groundwork for larger dimensionality implementations deployed on metropolitan fiber links.

quant-ph↗

arXiv2025

On-chip pulse generation at 8 μm wavelength

The mid-infrared spectral region holds growing importance for applications such as gas sensing and spectroscopy. Although compact ultrashort pulse laser sources are essential to enable these applications, their realization in this spectral range remains an open challenge. We demonstrate an integrated approach to generate pulses in the mid-infrared based on chirped Bragg gratings engineered to compensate for the group delay dispersion of quantum cascade laser frequency comb sources. SiGe graded-index photonic circuits are used for operation around 8 μm wavelength. With this approach, pulses as short as 1.39 picoseconds were obtained, marking a key step towards fully integrated ultrashort pulse sources in the mid-infrared.

physics.optics↗

arXiv2025

Critical nonreciprocity in gyrotropic coupled-waveguide system for TE-mode optical isolator and circulator

Photonic integrated circuits (PICs) increasingly require more advanced integrated functionalities and devices to meet the key application challenges. This evolution with the serial integration of optical functions in the same photonic circuit often results in internal reflections and optical feedback, which can specifically destabilize lasers. One solution to overcome this issue is to integrate an optical isolator at the output of the lasers. Among various proposed designs, magneto-optical-based isolators have significantly improved over the past decades in terms of compactness, insertion loss, isolation ratio, and spectral isolation bandwidth. Despite these improvements, the TE optical isolator still lacks in performance. This paper introduces a new operational principle for a TE optical isolator based on modal beating in a transverse magneto-optical Kerr effect (TMOKE) coupled-waveguide system. This approach combines evanescent-coupled silicon waveguides and the magneto-optical effect, resulting in a nonreciprocal propagation that can be optimized for optical isolation. This new concept shows promise in achieving a high-performing TE optical isolator, as it does not depend on resonance and is free from constraints associated with interferometers. Based on data from magneto-optical garnet materials, the simulated device has a length of 500 $μ$m and its 20 dB-isolation bandwidth is as high as 35 nm. With broadband and high isolation, this simulated device opens possibilities for miniaturizing complex photonic circuits used in optical communication, data communication, and optical sensing.

physics.optics↗

arXiv2025

Bistable soliton optical frequency combs in a second harmonic generation Kerr cavity

We study the dynamics and stability of soliton optical frequency comb generation in a dissipative, coherently pumped cavity with both second and third-order nonlinearity. Cavity sweep simulations and linear stability analysis based on path continuation reveal the existence of bistable solitons. These families of solutions represent a continuous transition between a purely quadratic and a Kerr cavity soliton frequency comb. Perspective demonstrations of these novel optical sources is an ongoing relevant subject within the frequency comb community.

nlin.CD↗

arXiv2024

Tunable on-chip electro-optic frequency-comb generation at 8 μm wavelength

Dual-comb spectroscopy is a powerful technique to measure optical spectra in a wide spectral range with high-frequency resolution. The development of compact systems operating in the long-wave infrared wavelength range is of high interest for spectroscopic and sensing applications. Amongst the different techniques to obtain optical frequency-combs, electro-optic frequency-comb generation presents major advantages thanks to the tunable repetition rate only limited by the bandwidth of the used electro-optical modulator. However, the development of integrated and efficient electro-optical modulators operating in a wide long-wave infrared spectral band is still at its infancy, and electro-optical frequency-comb has not been demonstrated so far beyond the telecom band. In this work, a Schottky-based modulator embedded in a Ge-rich graded SiGe waveguide is used for electro-optic frequency-comb generation. Considering the limited efficiency of the modulator, harmonically-rich RF signals are used to enhance the generation of comb lines around the optical carrier. Interestingly, this allows us to demonstrate the generation of electro-optical combs spanning over 2.4 GHz around 8 μm wavelength. This paves the way towards fully integrated and tunable mid-infrared electro-optic frequency-comb generation systems.

physics.optics↗

arXiv2023

Experimental demonstration of Continuous-Variable Quantum Key Distribution with a silicon photonics integrated receiver

Quantum Key Distribution (QKD) is a prominent application in the field of quantum cryptography providing information-theoretic security for secret key exchange. The implementation of QKD systems on photonic integrated circuits (PICs) can reduce the size and cost of such systems and facilitate their deployment in practical infrastructures. To this end, continuous-variable (CV) QKD systems are particularly well-suited as they do not require single-photon detectors, whose integration is presently challenging. Here we present a CV-QKD receiver based on a silicon PIC capable of performing balanced detection. We characterize its performance in a laboratory QKD setup using a frequency multiplexed pilot scheme with specifically designed data processing allowing for high modulation and secret key rates. The obtained excess noise values are compatible with asymptotic secret key rates of 2.4 Mbit/s and 220 kbit/s at an emulated distance of 10 km and 23 km, respectively. These results demonstrate the potential of this technology towards fully integrated devices suitable for high-speed, metropolitan-distance secure communication.

quant-ph↗

arXiv2023

Ferroelectricity in tetragonal ZrO$_2$ thin films

We report on the crystal structure and ferroelectric properties of epitaxial ZrO$_2$ films ranging from 7 to 42 nm thickness grown on La$_{0.67}$Sr$_{0.33}$MnO$_3$-buffered (110)-oriented SrTiO$_3$ substrate. By employing X-ray diffraction, we confirm a tetragonal phase at all investigated thicknesses, with slight in-plane strain due to the substrate in the thinnest films. Further confirmation of the tetragonal phase was obtained through Infrared absorption spectroscopy with synchrotron light, performed on ZrO$_2$ membrane transferred onto a high resistive Silicon substrate. Up to a thickness of 31 nm, the ZrO$_2$ epitaxial films exhibit ferroelectric behavior, at variance with the antiferroelectric behavior reported previously for the tetragonal phase in polycrystalline films. However, the ferroelectricity is found here to diminish with increasing film thickness, with a polarization of about 13 $μ$C.cm$^{-2}$ and down to 1 $μ$C.cm$^{-2}$ for 7 nm and 31 nm-thick ZrO$_2$ films, respectively. This highlights the role of thickness reduction, substrate strain, and surface effects in promoting polarization in the tetragonal ZrO$_2$ thin films. These findings provide new insights into the ferroelectric properties and structure of ZrO$_2$ thin films, and open up new directions to investigate the origin of ferroelectricity in ZrO$_2$ and to optimize this material for future applications.

cond-mat.mtrl-sci↗

arXiv2023

Parallelization of frequency domain quantum gates: manipulation and distribution of frequency-entangled photon pairs generated by a 21 GHz silicon micro-resonator

Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability, noise resilience, parallelization and compatibility with telecom multiplexing techniques. Integrated ring resonators have been used to generate frequency-entangled states through spontaneous four-wave-mixing. However, state-of-the-art integrated resonators are limited by trade-offs in size, number of frequency modes and spectral separation. We have developed silicon ring resonators with a foot-print below 0.05 mm2 providing more than 70 frequency channels separated by 21 GHz. We exploit the narrow frequency separation to parallelize and independently control 34 single qubit-gates with off-the-shelf electro-optic devices. This allows to fully characterize 17 frequency-bin maximally-entangled qubit pairs by performing quantum state tomography. We demonstrate for the first time a fully connected 5-user quantum network in the frequency domain. These results are a step towards a new generation of quantum circuits implemented with scalable silicon photonics technology, for applications in quantum computing and secure communications.

quant-ph↗

arXiv2023

High speed silicon photonic electro-optic Kerr modulation

Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation.

physics.optics↗

arXiv2023

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz.

physics.optics↗

arXiv2022

Spatial and polarization division multiplexing harnessing on-chip optical beam forming

On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new approach based on the coupling between guided modes in integrated waveguides and optical beams free-propagating on the chip plane. The engineering of the evanescent coupling between the guided modes and free-propagating beams allows spatial and polarization multiplexing with state-of-the-art performance. To demonstrate the potential and versatility of this approach, we have developed a two-polarization multiplexed link and a three-mode multiplexed link using standard 220-nm-thick silicon-on-insulator technology. The two-polarization link shows a measured -35 dB crosstalk bandwidth of 180 nm, while the three-mode link exhibits a -20 dB crosstalk bandwidth of 195 nm. These bandwidths cover the S, C, L, and U communication bands. We used these links to demonstrate error-free transmission (bit-error-rate < 10-9) of two and three non-return-to-zero signals at 40 Gbps each, with power penalties below 0.08 dB and 1.5 dB for the two-polarization and three-mode links respectively. The approach demonstrated here for two polarizations and three modes is also applicable to future implementation of more complex multiplexing schemes.

physics.optics↗