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Le Liu

Publications and source records attributed to Le Liu.

44 records · Page 3Linked to original sources

On the well-posedness of tracking Dirichlet data for Bernoulli free boundary problems

The aim of this paper is to study the shape optimization method for solving the Bernoulli free boundary problem, a well-known ill-posed problem that seeks the unknown free boundary through Cauchy data. Different formulations have been proposed in the literature that differ in the choice of the objective functional. Specifically, it was shown respectively in [14] and [16] that tracking Neumann data is well-posed but tracking Dirichlet data is not. In this paper we propose a new well-posed objective functional that tracks Dirichlet data at the free boundary. By calculating the Euler derivative and the shape Hessian of the objective functional we show that the new formulation is well-posed, i.e., the shape Hessian is coercive at the minimizers. The coercivity of the shape Hessian may ensure the existence of optimal solutions for the nonlinear Ritz-Galerkin approximation method and its convergence, thus is crucial for the formulation. As a summary, we conclude that tracking Dirichlet or Neumann data in its energy norm is not sufficient, but tracking it in a half an order higher norm will be well-posed. To support our theoretical results we carry out extensive numerical experiments.

math.NA↗

Electron-infrared phonon coupling in ABC trilayer graphene

Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significantly stronger electron-infrared phonon coupling strength than the Bernal ABA-stacked trilayer graphene. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering.

physics.optics↗

Temperature-linear Resistivity in Twisted Double Bilayer Graphene

We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreases with increasing of n, in agreement with acoustic phonon scattering model semi-quantitatively. The slope of T-linear resistivity is non-monotonically dependent on the displacement field with a single peak structure. For device with θ~1.23° at which correlated states emerge, the slope of T-linear resistivity is found maximum (~100Ω/K) at the boundary of the halo structure where phase transition occurs, with signatures of continuous phase transition, Planckian dissipation, and the diverging effective mass; these observations are in line with quantum critical behaviors, which might be due to the symmetry-breaking instability at the critical points. Our results shed new light on correlated physics in TDBG and other twisted moiré systems.

cond-mat.mes-hall↗

Foreground Object Structure Transfer for Unsupervised Domain Adaptation

Unsupervised domain adaptation aims to train a classification model from the labeled source domain for the unlabeled target domain. Since the data distributions of the two domains are different, the model often performs poorly on the target domain. Existing methods align the feature distributions of the source and target domains and learn domain-invariant features to improve the performance of the model. However, the features are usually aligned as a whole, and the domain adaptation task fails to serve the classification, which will ignore the class information and lead to misalignment.In this paper, we investigate those features that should be used for domain alignment, introduce prior knowledge to extract foreground features to guide the domain adaptation task for classification tasks, and perform alignment in the local structure of objects. We propose a method called Foreground Object Structure Transfer(FOST). The key to FOST is the new clustering based condition, which combines the relative position relationship of foreground objects. Based on this conditions, FOST makes the data distribution of the same class more compact in geometry. In practice, since the label of the target domain is not available, we use the clustering information of the source domain to assign pseudo labels to the target domain samples, and then according to the source domain data prior knowledge guides those positive features to maximum the inter-class distance between different classes and mimimum the intra-class distance. Extensive experimental results on various benchmarks ($i.e.$ ImageCLEF-DA, Office-31, Office-Home, Visda-2017) under different domain adaptation settings prove that our FOST compares favorably against the existing state-of-the-art domain adaptation methods.

cs.CV↗

Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene

New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. The valley Chern insulator with C = 2 is evident from a well quantized Hall conductance plateau at 2e^2/h and correspondingly a vanishing longitudinal component. The valley polarized Fermi surface is topologically trivial with C = 0, and it shows a series of quantized Landau levels with v_LL = 0, 1, 2, 3, 4 and others. These observations are in good agreements with our band and topology calculations. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.

cond-mat.mes-hall↗

Spatially indirect intervalley excitons in bilayer WSe2

Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/Γ valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics.

cond-mat.mes-hall↗

Attack on practical speaker verification system using universal adversarial perturbations

In authentication scenarios, applications of practical speaker verification systems usually require a person to read a dynamic authentication text. Previous studies played an audio adversarial example as a digital signal to perform physical attacks, which would be easily rejected by audio replay detection modules. This work shows that by playing our crafted adversarial perturbation as a separate source when the adversary is speaking, the practical speaker verification system will misjudge the adversary as a target speaker. A two-step algorithm is proposed to optimize the universal adversarial perturbation to be text-independent and has little effect on the authentication text recognition. We also estimated room impulse response (RIR) in the algorithm which allowed the perturbation to be effective after being played over the air. In the physical experiment, we achieved targeted attacks with success rate of 100%, while the word error rate (WER) on speech recognition was only increased by 3.55%. And recorded audios could pass replay detection for the live person speaking.

cs.SD↗

Emergence of Chern insulating states in non-Magic angle twisted bilayer graphene

Twisting two layers into a magic angle (MA) of ~1.1° is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle θ changes from 1.25° at one end to 1.43° at the other. For θ=1.25°, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moiré unite cell. When θ>1.25°, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moiré unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.

cond-mat.mes-hall↗