arXiv subjects

Leandro R. F. Lima

Publications and source records attributed to Leandro R. F. Lima.

13 recordsLinked to original sources

arXiv2022

Breakdown of topological protection due to non-magnetic edge disorder in two-dimensional materials in the Quantum Spin Hall phase

We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay between the electronic localized states due to edge defects and electron-electron interactions gives rise to local magnetic moments, that break time-reversal symmetry and the topological protection of the edge states in 2D topological systems. Our results suggest that edge disorder leads to small deviations of a perfect quantized conductance in short samples and to a strong conductance suppression in long ones. Our analysis is based on on the Kane-Mele model, an unrestricted Hubbard mean field Hamiltonian and on a self-consistent recursive Green's functions technique to calculate the transport quantities.

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arXiv2022

Local equilibrium charge and spin currents in two-dimensional topological systems

We study the equilibrium and nonequilibrium electronic transport properties of multiprobe topological systems using a combination of the Landauer-Büttiker approach and nonequilibrium Green's functions techniques. We obtain general expressions for both nonequilibrium and equilibrium local electronic currents that, by suitable projections, allow one to compute charge, spin, valley, and orbital currents. We show that external magnetic fields give rise to equilibrium charge currents in mesoscopic system and study the latter in the quantum Hall regime. Likewise, a spin-orbit interaction leads to local equilibrium spin currents, that we analyze in the quantum spin Hall regime.

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arXiv2021

Seebeck and Nernst effects in topological insulator: the case of strained HgTe

We theoretically study the thermoelectric transport properties of strained HgTe in the topological insulator phase. We developed a model for the system using a Dirac Hamiltonian including the effect of strain induced by the interface between HgTe and the CdTe substrate. The conductivity tensor was explored assuming the electrons are scattered by charge impurities, while the thermopower tensor was addressed using the Mott relation. Seebeck and Nernst responses exhibit remarkable enhancements in comparison with other two-dimensional Dirac materials, such as graphene, germanane, prosphorene and stanene. The intensity of these termoeletric responses, their dependencies with the external perpendicular magnetic field and temperature are also addressed.

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arXiv2018

A numerical method to efficiently calculate the transport properties of large systems: an algorithm optimized for sparse linear solvers

We present a self-contained description of the wave-function matching (WFM) method to calculate electronic quantum transport properties of nanostructures using the Landauer-Büttiker approach. The method is based on a partition of the system between a central region ("conductor") containing $N_S$ sites and an asymptotic region ("leads") characterized by $N_P$ open channels. The two subsystems are linearly coupled and solved simultaneously using an efficient sparse linear solver. Invoking the sparsity of the Hamiltonian matrix representation of the central region, we show that the number of operations required by the WFM method in conductance calculations scales with $\sim N_S\times N_P$ for large $N_S$.

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arXiv2018

Investigating transverse Hall conductances using two-terminal setups

In this paper we present a method to numerically study transverse Hall conductances using a two-terminal setup. Using nonlinear transport concepts we find that the Hall voltage dependence on the model parameters can be investigated from the difference between the injectivities from each terminal. The method is suitable to work with non-equilibrium Green's functions as well as for scattering matrix approaches. We illustrate the proposed idea by studying the quantum spin Hall effect in graphene with disordered spin-orbit scattering centers induced by adatoms. We use two distinct models, a finite difference implementation of the Dirac Hamiltonian and a tight-binding Hamiltonian combined with the scattering matrix approach and the non-equilibrium Green's functions approach, respectively.

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arXiv2018

An efficient method for computing the electronic transport properties of a multi-terminal system

We present a multiprobe recursive Green's function method to compute the transport properties of mesoscopic systems using the Landauer-Büttiker approach. By introducing an adaptive partition scheme, we map the multiprobe problem into the standard two-probe recursive Green's function method. We apply the method to compute the longitudinal and Hall resistances of a disordered graphene sample, a system of current interest. We show that the performance and accuracy of our method compares very well with other state-of-the-art schemes.

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arXiv2017

Phononic heat transport in nanomechanical structures: steady-state and pumping

We study the heat transport due to phonons in nanomechanical structures using a phase space representation of non-equilibrium Green's functions. This representation accounts for the atomic degrees of freedom making it particularly suited for the description of small (molecular) junctions systems. We show that for the steady state limit our formalism correctly recovers the heuristic Landauer-like heat conductance for a quantum coherent molecular system coupled to thermal reservoirs. We find general expressions for the non-stationary heat current due to an external periodic drive. In both cases we discuss the quantum thermodynamic properties of the systems. We apply our formalism to the case of a diatomic molecular junction.

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arXiv2017

Tunable spin-polarized edge transport in inverted quantum-well junctions

Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the spectrum and the charge transport in HgTe/CdTe quantum well junctions both in the topological regime and in the absence of time-reversal symmetry. We model the system using the BHZ effective Hamiltonian and compute the transport properties using recursive Green's functions with a finite differences' method. Specifically, we have studied the material's spatially-resolved conductance in a set-up with a gated central region, forming monopolar (n-n$^{\prime}$-n) and heteropolar (n-p-n, n-TI-n) double junctions, which have been recently realized in experiments. We find regimes in which the edge states carry spin-polarized currents in the central region even in the presence of a small magnetic field, which breaks TRS. More interestingly, the conductance displays spin-dependent, Fabry-Perót-like oscillations as a function of the central gate voltage producing tunable, fully spin-polarized currents through the device.

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arXiv2017

Electronic transport in disordered MoS$_2$ nanoribbons

We study the electronic structure and transport properties of zigzag and armchair monolayer molybdenum disulfide nanoribbons using an 11-band tight-binding model that accurately reproduces the material's bulk band structure near the band gap. We study the electronic properties of pristine zigzag and armchair nanoribbons, paying particular attention to the edges states that appear within the MoS$_2$ bulk gap. By analyzing both their orbital composition and their local density of states, we find that in zigzag-terminated nanoribbons these states can be localized at a single edge for certain energies independent of the nanoribbon width. We also study the effects of disorder in these systems using the recursive Green's function technique. We show that for the zigzag nanoribbons, the conductance due to the edge states is strongly suppressed by short-range disorder such as vacancies. In contrast, the local density of states still shows edge localization. We also show that long-range disorder has a small effect on the transport properties of nanoribbons within the bulk gap energy window.

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arXiv2016

A 50/50 electronic beam splitter in graphene nanoribbons as a building block for electron optics

Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by 60 degrees, we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green's function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the doping (Fermi energy). We show that this device is robust against thermal fluctuations and long range disorder, as zigzag valley chiral states of the nanoribbons are protected against backscattering. We suggest that the proposed device can be applied as the fundamental element of the Hong-Ou-Mandel interferometer, as well as a building block of many devices in electron optics.

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arXiv2015

Disorder assisted transmission due to charge puddles in monolayer graphene: Transmission enhancement and local currents

We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission due to evanescent modes allowing to single out the effect of charge fluctuations in the transport properties. We use the recursive Green's functions technique to obtain local and total transmissions through systems that mimic vanishing density of states at the charge neutrality point in the presence of a local disordered local potential to model the charge puddles. Our microscopic model includes electron-electron interactions via a spin resolved Hubbard mean field term. We establish the relation between the charge puddle disorder potential and the electronic transmission at the charge neutrality point. We discuss the implications of our findings to high mobility graphene samples deposited on different substrates and provide a qualitative interpretation of recent experimental results.

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arXiv2015

Random gauge field effects on the conductivity of graphene sheets with disordered ripples

We study the effect of disordered ripples on the conductivity of monolayer graphene flakes. We calculate the relaxation times and the Boltzmann conductivities associated with two mechanisms. First, we study the conductivity correction due to an external in-plane magnetic field $B_\parallel$. Due to the irregular local curvature found at graphene sheets deposited over a substrate, $B_\parallel$ can be mapped into an effective random magnetic field perpendicular to the graphene surface. Second, we study the electron momentum relaxation due to intrinsic pseudo magnetic fields originated from deformations and strain. We find that the competition between these mechanisms gives rise to a strong anisotropy in the conductivity tensor. This result provides a new strategy to quantitatively infer the strength of pseudo-magnetic fields in rippled graphene flakes.

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arXiv2012

The role of the disorder range and electronic energy in the graphene nanoribbons perfect transmission

Numerical calculations based on the recursive Green's functions method in the tight-binding approximation are performed to calculate the dimensionless conductance $g$ in disordered graphene nanoribbons with Gaussian scatterers. The influence of the transition from short- to long-ranged disorder on $g$ is studied as well as its effects on the formation of a perfectly conducting channel. We also investigate the dependence of electronic energy on the perfectly conducting channel. We propose and calculate a backscattering estimative in order to establish the connection between the perfectly conducting channel (with $g=1$) and the amount of intervalley scattering.

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