SearcharxivSearch

arXiv subjects

Leena Diehl

Publications and source records attributed to Leena Diehl.

6 recordsLinked to original sources

Machine Learning-Based Reconstruction for Resistive Silicon Sensors

Low-Gain Avalanche Diodes (LGADs) and AC-coupled Low-Gain Avalanche Diodes (AC-LGADs) are promising technologies for precision timing and four-dimensional tracking. In AC-LGADs, the AC pad is coupled to the resistive n$^{+}$ layer through a dielectric layer, while the gain layer remains unsegmented. This structure provides a 100\% fill factor and enables good spatial resolution with a relaxed readout pitch. The same signal-sharing mechanism that makes interpolation possible complicates the readout: charge spreads across multiple pads, the useful information can approach the electronic-noise threshold, and matrix-inversion approaches can become computationally challenging and sensitive to off-diagonal noise. In this work, we study machine-learning-based reconstruction and compression for resistive silicon sensors. We use full-waveform information from correlated pads to regularise the reconstruction and extract spatial information beyond what is available from binary readouts or reduced-amplitude summaries. We first introduce recurrent neural network models based on LSTM layers, which provide a proof-of-concept implementation for full-waveform reconstruction and have been tested for FPGA deployment using \hls. We also study routes towards bandwidth reduction with waveform rasterisation and window-selection methods, and extend the approach beyond the first model to topology-agnostic transformer-based architectures that use pad coordinates as part of the input. These models are designed to support arbitrary pad counts and geometries, mitigate edge distortions, preserve approximately $10~μ\mathrm{m}$ position resolution for $500~μ\mathrm{m}\times500~μ\mathrm{m}$ pitched sensors, and guide future resistive-silicon sensor designs

hep-ex

Temperature dependence of the long-term annealing behavior of neutron irradiated diodes from 8-inch p-type silicon wafers

To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL) concept. The high-radiation regions of the the CE, where fluences between $1\cdot10^{14}~n_{eq}/cm^{2}$ and $1\cdot10^{16}~n_{eq}/cm^{2}$ and doses of up to 2\,MGy are expected considering an integrated luminosity of $3\,ab^{-1}$, will be equipped with silicon pad sensors. This includes the entire electromagnetic as well as parts of the hadronic section of the CE. The silicon sensors are processed on 8-inch p-type wafers with an active thickness of 300\,\textmu m, 200\,\textmu m and 120\,\textmu m and cut into hexagonal shapes for optimal use of the full wafer area and tiling. With each main sensor, several small test structures (e.g. pad diodes) are hosted on the wafers, used for quality assurance and radiation hardness tests. In order to investigate the radiation-induced bulk damage, these diodes have been irradiated with reactor neutrons at JSI (Jozef Stefan Institute, Ljubljana, Slovenia) to fluences between $5\cdot10^{14}~n_{eq}/cm^{2}$ and $1.5\cdot10^{16}~n_{eq}/cm^{2}$. This study focuses on the isothermal annealing behavior of the bulk material at different temperatures between 5.5°C and 60°C using electrical characterization and charge collection measurements. The results are used to extract the annealing time constants for this material and fluence range based on the Hamburg model approach to allow an estimation of the expected annealing effects in silicon sensors during the year-end technical stops and the long HL-LHC shutdowns. The annealing parameters found will make it possible to model the annealing behavior of p-type silicon detector projects at HL-LHC fluence ranges better than the existing Hamburg model.

physics.ins-det

Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers

To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL) concept. The electromagnetic section as well as the high-radiation regions of the hadronic section of the CE will be equipped with silicon pad sensors, covering a total area of 620 $\rm m^2$. Fluences up to $\rm1.0\cdot10^{16}~n_{eq}/cm^{2}$ and doses up to 2 MGy are expected considering an integrated luminosity of 3 $\rm ab^{-1}$. The whole CE will normally operate at -35°C in order to mitigate the effects of radiation damage. The silicon sensors are processed on novel 8-inch p-type wafers with an active thickness of 300 $μm$, 200 $μm$ and 120 $μm$ and cut into hexagonal shapes for optimal use of the wafer area and tiling. With each main sensor several small sized test structures (e.g pad diodes) are hosted on the wafers, used for quality assurance and radiation hardness tests. In order to investigate the radiation-induced bulk damage, these diodes have been irradiated with reactor neutrons at the TRIGA reactor in JSI (Jožef Stefan Institute, Ljubljana) to 13 fluences between $\rm6.5\cdot10^{14}~n_{eq}/cm^{2}$ and $\rm1.5\cdot10^{16}~n_{eq}/cm^{2}$. The charge collection of the irradiated silicon diodes was determined through transient current technique (TCT) measurements. The study focuses on the isothermal annealing behaviour of the bulk material at 60°C. The results have been used to extend the usage of thicker silicon sensors in regions expecting higher fluences and are being used to estimate the expected annealing effects of the silicon sensors during year-end technical stops and long HL-LHC shutdowns currently foreseen with a temperature around 0°C.

physics.ins-det

Characterisation and simulation of stitched CMOS strip sensors

In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.

physics.ins-det

Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$.

physics.ins-det

Characterization of Passive CMOS Strip Sensors

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.

physics.ins-det