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Leining Zhang

Publications and source records attributed to Leining Zhang.

4 recordsLinked to original sources

Transformer-based prediction of two-dimensional material electronic properties under elastic strain engineering

Strain engineering provides a powerful route for tuning the electronic properties of two-dimensional (2D) materials, but exploring the full multidimensional strain space with density functional theory (DFT) is computationally prohibitive due to the nonlinear coupling between normal and shear components. In this work, we introduce a Transformer-based, multi-target surrogate model framework that achieves DFT-level bandgap prediction accuracy, reaching a mean absolute error of 0.0103 eV while retaining full interpretability through attention-weight analysis. The learned self-attention map consistently identifies shear strain as the interaction center that influences both bandgap and phonon stability, an insight not readily captured by classical feature-importance metrics. This work establishes attention-based architectures as physically interpretable surrogate models for multi-property prediction, offering a generalizable strategy for accelerating deep elastic strain engineering in materials informatics.

cond-mat.mtrl-sci

Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering

Negative Poisson's ratio as the anomalous characteristic generally exists in artificial architectures, such as re-entrant and honeycomb structures. The structures with negative Poisson's ratio have attracted intensive attention due to their unique auxetic effect and many promising applications in shear resistant and energy absorption fields. However, experimental observation of negative Poisson's ratio in natural materials barely happened, although various two-dimensional layered materials are predicted in theory. Herein, we report the anisotropic Raman response and the intrinsic intralayer negative Poisson's ratio of two-dimensional natural black arsenic (b-As) via strain engineering strategy. The results were evident by the detailed Raman spectrum of b-As under uniaxial strain together with density functional theory calculations. It is found that b-As was softer along the armchair than zigzag direction. The anisotropic mechanical features and van der Waals interactions play essential roles in strain-dependent Raman shifts and negative Poisson's ratio in the natural b-As along zigzag direction. This work may shed a light on the mechanical properties and potential applications of two-dimensional puckered materials.

cond-mat.mtrl-sci

Bottom-up Growth of Graphene Nanospears and Nanoribbons

Graphene nanoribbons (GNRs) are considered one of the most promising materials for next generation electronics, however a reliable and controllable synthesis method is still lacking. Here, we report the CVD growth of GNRs on a copper surface and the corresponding mechanisms of growth. One-dimensional GNR growth is enabled by a vapor-liquid-solid (VLS) graphene growth guided by on-surface propagation of a liquid catalyst particle. Controlling the suppression of vapor-solid-solid (VSS) graphene growth along the width direction of the GNR by tuning the flow of H2 during growth gives rise to a spear head-shaped graphene that we term graphene nanospears (GNSs). The real-time visual and spatially resolved observations confirm the VSS growth of graphene can be fully suppressed and lead to GNR formation on Cu surface. These findings reveal key insight into the growth mechanism of graphene and open a door for achieving a facile and scalable method of synthesizing free standing GNRs.

cond-mat.mes-hall

Towards the growth of single-crystal boron nitride monolayer on Cu

Atom-layered hexagonal boron nitride (hBN), with excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator to open up the great possibilities for exciting potential applications in electronics, optoelectronics and photovoltaics. The ability to grow high-quality large single crystals of hBN is at the heart for those applications, but the size of single-crystal 2D BN is less than a millimetre till now. Here, we report the first epitaxial growth of a 10*10 cm2 single-crystal hBN monolayer on a low symmetry Cu(110) "vicinal surface". The growth kinetics, unidirectional alignment and seamless stitching of hBN domains are unambiguously illustrated using centimetre- to the atomic-scale characterization techniques. The findings in this work are expected to significantly boost the massive applications of 2D materials-based devices, and also pave the way for the epitaxial growth of broad non-centrosymmetric 2D materials.

cond-mat.mtrl-sci