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Lekshmi Eswaramoorthy

Publications and source records attributed to Lekshmi Eswaramoorthy.

6 recordsLinked to original sources

Stitch-Free, Diamond-Scribed Silicon Nitride Photonic Integrated Circuits for the Visible Band

Silicon nitride photonic integrated circuits for the visible band are conventionally built with a buried oxide overcladding and singulated with wafer-scale tooling, constraints that preclude evanescent access to the guided mode for externally integrated emitters. We report a PECVD grown $Si_3N_4$ platform designed around an air-clad waveguide whose evanescent field remains accessible along the full device length. Two process elements make this geometry practical at chip scale. Fixed-beam moving-stage electron-beam lithography writes 500 nm single-mode waveguides as one continuous exposure across the 5 mm chip, removing write-field stitching which, given the $σ^{2}/d^{4}$ scaling of sidewall scattering in this high-confinement geometry at 635 nm, would otherwise dominate the loss budget. Chip singulation is performed by pen-type diamond scribing along lithographically patterned markers registered to in-plane direction, cleaving the Si(100) substrate to yield end-facets within $2^\circ$ of normal at $80 \%$ yield. Structural characterization by scanning electron microscopy confirms stitch-free waveguide geometry and undamaged, near-vertical scribed facets; light is coupled end-fire into fabricated devices and guided to a microring with evanescent bus-to-ring coupling confirmed by scattering imaging, and a sidewall-roughness-dependent scattering-loss model indicates that loss remains low in the roughness regime consistent with the observed facet and sidewall quality. Building on the intrinsic emitter-resonator coupling demonstrated in, this platform extends monolithic $Si_3N_4$ photonics toward scalable visible-to-near-infrared quantum and classical circuits.

physics.optics

From Atomic Defects to Integrated Photonics: A Perspective on Solid-State Quantum Light Sources

Single-photon emitters (SPEs) constitute a foundational resource for quantum technologies, including secure communication, photonic quantum computing, and emerging quantum network architectures. A wide range of quantum materials, from atom-like point defects in bulk crystals to excitonic states in low-dimensional semiconductors, now provide bright, coherent, and scalable sources of non-classical light. Meanwhile, advances in photonic integration have enabled efficient routing, filtering, and on-chip manipulation of these emitters. From this perspective, we survey and discuss the technological landscape in which solid-state emitters interface with quantum sensing, quantum communication, quantum computation, and emerging photonic AI platforms. Further, we discuss the materials landscape underpinning modern single-photon sources from the zero-dimensional, one-dimensional, two-dimensional and three-dimensional materials. Lastly, we highlight key integration pathways for these single-photon emitters into scalable quantum photonic systems.

physics.optics

Protected Ion Beam Fabrication of Two-Dimensional Transition Metal Dichalcogenides based Photonic Devices

Two-dimensional (2D) transition metal dichalcogenides are pivotal for next-generation photonic devices due to their exceptional optical properties and strong light-matter interactions. However, their atomic thinness renders them susceptible to damage during nanoscale fabrication. Focused ion beam technology, while offering precise defect engineering for tailoring optoelectronic properties, often induces collateral damage far beyond the target region, compromising device performance. This study addresses the critical challenge of preserving the intrinsic optical characteristics of 2D TMDCs during FIB patterning. We demonstrate that conventional dielectric encapsulation fails to protect 2D TMDCs from gallium ion-induced damage, leading to persistent defects and quenched optical responses in patterned microstructures. In contrast, polymeric encapsulation with PMMA (polymethyl methacrylate) effectively mitigates damage by acting as a sacrificial layer that absorbs ion impact, thereby preserving the optical properties of the underlying TMDC. Furthermore, we leverage XeF2-assisted Ga ion beam direct patterning, which significantly reduces collateral damage, minimizes Ga ion implantation, and enables precise anisotropic material removal, yielding ultra-smooth sidewalls critical for high-quality photonic resonators. This combined approach of PMMA encapsulation and XeF2-assisted FIB patterning offers a robust, cost-effective, and scalable single-step fabrication route for integrating 2D TMDCs into high-performance photonic devices, thereby maintaining their intrinsic optical functionality essential for advancing quantum technologies and compact optical circuits.

physics.optics

Focused ion beam polishing based optimization of high-Q silica microdisk resonators

Whispering gallery mode (WGM) microdisk resonators are promising optical devices that confine light efficiently and enable enhanced nonlinear optical effects. This work presents a novel approach to reduce sidewall roughness in SiO\textsubscript{2} microdisk resonators using focused ion beam (FIB) polishing. The microdisks, with varying diameter ranging from 5 to 20 $μ$m are fabricated using a multi-step fabrication scheme. However, the etching process introduces significant sidewall roughness, which increases with decreasing microdisk radius, degrading the resonators' quality. To address this issue, a FIB system is employed to polish the sidewalls, using optimized process parameters to minimize Ga ion implantation. White light interferometry measurements reveal a significant reduction in surface roughness from 7 nm to 20 nm for a 5 $μ$m diameter microdisk, leading to a substantial enhancement in the scattering quality factor (Qss) from $3\times 10^2$ to $2\times 10^6$. These findings demonstrate the effectiveness of FIB polishing in improving the quality of microdisk resonators and open up new possibilities for the fabrication of advanced photonic devices.

physics.optics

A low cost plasmonic platform for photon emission engineering of two dimensional semiconductors

Although the field of 2D materials has democratized materials science by making high quality samples accessible cheaply, due to the atomically thin nature of these systems, an integration with nanostructures is almost always required to obtain a significant optical response. Traditionally, these nanostructures are fabricated via electron beam lithography or focused ion beam milling, which are expensive and large area fabrication can be further time consuming. In order to overcome this problem, we report the integration of 2D semiconductors on a cost-effective and large area fabricated nanocone platform. We show that the plasmon modes of our nanocone structures lead to photoluminescence (PL) enhancement of monolayer WSe$_2$ by about eight to ten times compared to the non-plasmonic case, consistent with finite-difference time-domain simulations. Excitation power-dependent measurements reveal that our nanocone platform enables a versatile route to engineering the relative exciton trion contributions to the emission.

physics.optics

Engineering Purcell factor anisotropy for dark and bright excitons in two dimensional semiconductors

Tightly bound dark excitons in atomically thin semiconductors can be used for various optoelectronic applications including light storage and quantum communication. Their optical accessibility is however limited due to their out-of-plane transition dipole moment. We thus propose to strengthen the coupling of dark excitons in two dimensional materials with out-of-plane resonant modes of a cavity at room temperature, by engineering the anisotropy in the Purcell factor. A silica micro-disk characterised by high confinement of light in small modal volume, high Q-factor and free spectral range is used to couple to the excitons in monolayer transition metal dichalcogenides. We show numerically that the tapering of sidewalls of the micro-disk is an extremely versatile route for achieving the selective coupling of whispering gallery modes to light emitted from out-of-plane dipoles to the detriment of that from in-plane ones for four representative monolayer transition metal dichalcogenides.

physics.optics