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Leon Shterengas

Publications and source records attributed to Leon Shterengas.

2 recordsLinked to original sources

Generation of entangled photons via parametric down-conversion in semiconductor lasers and integrated quantum photonic systems

We propose and design a high-brightness, ultra-compact electrically pumped GaSb-based laser source of entangled photons generated by mode-matched intracavity parametric down-conversion of lasing modes. To describe the nonlinear mixing in highly dispersive and dissipative waveguides, we develop a nonperturbative quantum theory of parametric down-conversion of waveguide modes which takes into account the effects of modal dispersion, group and phase mismatch, propagation, dissipation, and coupling to noisy reservoirs. We extend our theory to the regime of quantized pump fields with a new approach based on the propagation equation for the state vector which solves the nonperturbative boundary-value problem of the parametric decay of a quantized single-photon pump mode and can be generalized to include the effects of dissipation and noise. Our formalism is applicable to a wide variety of three-wave mixing propagation problems. It provides convenient analytic expressions for interpreting experimental results and predicting the performance of monolithic quantum photonic systems.

quant-ph

Metamorphic InAs1-xSbx/InAs1-ySby superlattices with ultra-low bandgap as a Dirac material

It was experimentally demonstrated that short-period metamorphic InAs1-xSbx/InAs1-ySby superlattices with ultra low bandgap have properties of a Dirac material. Cyclotron resonance and interband magneto-absorption peaks in superlattices with ultra-low bandgaps demonstrate a square root dependence on the magnetic field for a range up to 16 T (energy range up to 300meV). This directly indicates the linearity of the electron dispersion. The Fermi velocity can be controlled by varying the overlap between electron and hole states in the superlattice. The dependence of the cyclotron resonance energy on the magnetic field parallel to the superlattice plane demonstrates that the electron dispersion in the growth direction can be characterized by an effective mass of 0.028m0 in a superlattice with a period of 6 nm and 0.045m0 in a superlattice with a period of 7.5 nm. Extreme design flexibility makes the short-period metamorphic InAs1-xSbx/InAs1-ySby superlattice a new prospective platform for studying the effects of charge carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.

cond-mat.mtrl-sci