arXiv subjects

Leonard Geilen

Publications and source records attributed to Leonard Geilen.

3 recordsLinked to original sources

arXiv2025

In-situ profiling of pressure-induced exciton traps in suspended MoS$_2$ monolayers

We demonstrate the in-situ read-out of the spatial profile of suspended MoS$_2$ monolayers hosted on substrates with nano-structured holes. As the profiles are spatially bent, the suspended MoS$_2$ monolayers act as exciton traps with tunable luminescence intensity and energy. The tunability is realized by controlling the environmental pressure on the monolayers, which allows to control hundreds of suspended MoS$_2$ monolayers on a single substrate. The in-situ read-out is based on Fabry-P\'erot interferences and a model of the corresponding reflectance contrast maps of the investigated monolayers.

cond-mat.mes-hall↗

arXiv2025

Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride

Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the defect creation mechanism via such irradiation is well understood, the occurrence rate of optically active negatively charged vacancies ($V_B^-$) is an open question. In this work, we exploit focused helium ions to systematically generate optically active vacancy defects in hBN flakes at varying density. By comparing the density-dependent spin splitting measured by magnetic resonance to calculations based on a microscopic charge model, in which we introduce a correction term due to a constant background charge, we are able to quantify the number of $V_B^-$ defects generated by the ion irradiation. We find a lower bound for the fraction (0.2%) of all vacancies in the optically active, negatively charged state. Our results provide a protocol for measuring the generation efficiency of $V_B^-$, which is necessary for understanding and optimizing luminescent centers in hBN.

cond-mat.mes-hall↗

arXiv2024

Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors

Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices.

cond-mat.mes-hall↗