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Leopold Virot

Publications and source records attributed to Leopold Virot.

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Fully integrated quantum frequency processor on a silicon chip

Frequency-bin encoding has recently emerged as a powerful approach for photonic quantum information processing, offering high dimensionality, gate-parallelization, and compatibility with existing telecommunication infrastructure. However, its scalable deployment has so far been hindered by the lack of an integrated platform capable of unifying quantum state generation, coherent frequency mixing, and programmable spectral control.\\ Here, we report the first fully integrated quantum frequency processor, monolithically integrating on the same silicon photonic chip a microresonator-based biphoton quantum frequency comb source, a pump-rejection filter, high-speed phase modulators, and a four-channel, line-by-line pulse shaper. We demonstrate key functionalities, such as tunable frequency beamsplitters with success probabilities exceeding $94\%$ and fidelities above $99.9\%$, as well as the ability to synthesize more general single-qubit gates. Finally, we generate and coherently manipulate high-dimensional frequency-bin entangled states entirely on chip, showcasing control over two-photon quantum walks and performing the first on-chip frequency-bin quantum state tomography of a Bell-state with a fidelity of $95.7(3)\%$. By integrating all key functional elements on the same $4\times7\,\textrm{mm}^2$ chip, with the possibility of scaling to a larger number of modes, our work marks an important step toward large-scale frequency-domain photonic processors for both classical and quantum applications.

quant-ph

High speed silicon photonic electro-optic Kerr modulation

Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation.

physics.optics