arXiv subjects

Lesya P. Yurchenko

Publications and source records attributed to Lesya P. Yurchenko.

10 recordsLinked to original sources

arXiv2026

Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles

In this work we study the stabilization of the orthorhombic phases in small Hf0.5Zr0.5O2 nanoparticles (average size ~ 7 nm) annealed under different oxygen partial pressures. Concentration of the oxygen vacancies, which is determined by annealing conditions, was estimated from the electron paramagnetic resonance spectra and X-ray photoelectron spectroscopy. The fraction of the orthorhombic phases, that is determined by the X-ray diffraction and nuclear magnetic resonance, depends on the concentration of oxygen vacancies. Phenomenological calculations based on Landau-Ginzburg-Devonshire theory considering trilinear coupling between nonpolar, antipolar and polar phonon modes, indicate that chemical strain induced by oxygen vacancies can stabilize the orthorhombic phase o-III with the ferroelectric long-range ordering in small Hf0.5Zr0.5O2 nanoparticles. The theory confirms the stability of ferroelectric polarization in the vacancy-enriched Hf0.5Zr0.5O2 nanoparticles. The increase in the intensity of the dielectric permittivity maximum, observed near 350 - 380 K in the PVDF matrix with the Hf0.5Zr0.5O2 nanoparticles annealed in the CO+CO2 atmosphere, is clearly associated with the increase in oxygen vacancies concentration. The vacancies lead to the defect-induced elastic dipole formation and to the increase in ionic conductivity, which decreases the depolarization field and may induce the ferroelectric-like phase transition in the vacancy-enriched Hf0.5Zr0.5O2 nanoparticles. Due to the interfacial effects the negative capacitance states may be realized in weakly screened and spatially isolated Hf0.5Zr0.5O2 nanoparticles embedded in the PVDF matrix.The present approach based on oxygen-vacancy-induced elastic and screening effects may provide a route for engineering ferroelectric-like states in other nanoscale ferroic oxides.

cond-mat.mtrl-sci↗

arXiv2025

Colossal dielectric response of HfxZr1-xO2 nanoparticles

We reveal a colossal dielectric response of small (5 - 10 nm) oxygen-deficient HfxZr1-xO2 nanoparticles (x = 1 - 0.4), prepared by the solid-state organonitrate synthesis. The effective dielectric permittivity of the pressed HfxZr1-xO2 nanopowders has a pronounced maximum at 38 - 88 C, which shape can be fitted by the Curie-Weiss type dependence modified for the diffuse ferroelectric-paraelectric phase transition. The maximal value of the dielectric permittivity increases from 1.5*10^3 (for x = 1) to 1.5*10^5 (for x= 0.4) at low frequencies (~4 Hz); being much smaller, namely changing from 7 (for x = 1) to 20 (for x = 0.4) at high frequencies (~500 kHz). The frequency dispersion of the dielectric permittivity maximum position is almost absent, meanwhile the shape and width of the maximum changes in a complex way with increase in frequency. The temperature dependencies of the dielectric permittivity and resistivity are almost mirror-like turned over in respect to each other, which means that all their features, such as position and shape of maxima, plateau, minima and inflexions, almost coincide after the mirror reflection in respect to the temperature axis. These correlations of resistivity and dielectric permittivity are well-described in the Heywang barrier model applied together with the variable range hopping conduction model in semiconducting ferroelectrics. The ferroelectric-like behavior of the small oxygen-deficient HfxZr1-xO2 nanoparticles is expected from the Landau-Ginzburg-Devonshire approach and density functional theory calculations. Obtained results may be useful for developing silicon-compatible functional nanomaterials based on HfxZr1-xO2 nanoparticles.

cond-mat.mtrl-sci↗

arXiv2025

Resistive switching and charge accumulation in Hf0.5Zr0.5O2 nanoparticles

We revealed the resistive switching, negative differential resistance and charge accumulation effects in Hf0.5Zr0.5O2 nanopowders sintered by the auto-combustion sol-gel method and annealed at temperatures from 500{\deg}C to 800{\deg}C. The fraction of the orthorhombic phase, determined by the X-ray diffraction (XRD), decreases from 91 vol.% to 7 vol.% with an increase in the annealing temperature from 600{\deg}C to 800{\deg}C. The electron paramagnetic resonance (EPR) spectra reveal the great amount of oxygen vacancies in the annealed samples, at that the decrease of the orthorhombic phase fraction (observed with an increase in the annealing temperature) correlates with a decrease in the intensity of EPR spectral lines associated with the oxygen vacancies and impurities. This indicates the participation of oxygen vacancies and other defects in the formation of the orthorhombic phase in the Hf0.5Zr0.5O2 powders. To explain the results of electrophysical measurements, we compare the features of the current-voltage characteristics with the phase composition of the Hf0.5Zr0.5O2 powders and with the peculiarities of their EPR spectra. The analysis allows us to relate the resistive switching and charge accumulation observed in Hf0.5Zr0.5O2 nanopowders with the appearance of the ferroelectric-like polar regions in the orthorhombic phase of the nanoparticles, which agrees with the calculations performed in the framework of Landau-Ginzburg-Devonshire approach and density functional theory.

cond-mat.mtrl-sci↗

arXiv2024

The origin of the ferroelectric-like orthorhombic phase in oxygen-deficient HfO2-y nanoparticles

In this work we established the relationship between the crystalline structure symmetry, point defects and possible appearance of the ferroelectric-like polarization in HfO2-y nanoparticles. Notably, that XRD and EPR analysis revealed the formation of the ferroelectric-like orthorhombic phase in the oxygen-deficient HfO2-y nanoparticles (pure and doped with rare-earth element yttrium). DFT calculations showed that small HfO2 nanoparticles may become polar, especially in the presence of impurity atoms and/or oxygen vacancies. To explain the experimental results, we have modified the effective LGD model through the parameterization approach, focusing on the Landau expansion coefficients associated with the polar (FE) and antipolar (AFE) orderings, which agrees with the performed DFT calculations. The effective LGD model can be useful for the development of the novel generation of silicon-compatible ferroelectric nanomaterials based on the HfxZr1-xO2-y.

cond-mat.mtrl-sci↗

arXiv2024

Reentrant polar phase induced by the ferro-ionic coupling in Bi$_{1-x}$Sm$_x$FeO$_3$ nanoparticles

Using the model of four sublattices, the Landau-Ginzburg-Devonshire-Kittel phenomenological approach and the Stephenson-Highland ionic adsorption model for the description of coupled polar and antipolar long-range orders in ferroics, we calculated analytically the phase diagrams and polar properties of Bi$_{1-x}$Sm$_x$FeO$_3$ nanoparticles covered by surface ions in dependence on their size, surface ions density, samarium content "x" and temperature. The size effects and ferro-ionic coupling govern the appearance and stability conditions of the long-range ordered ferroelectric, reentrant ferrielectric and antiferroelectric phases in the Bi1-xSmxFeO3 nanoparticles. Calculated phase diagrams are in a qualitative agreement with the X-ray diffraction phase analysis, electron paramagnetic resonance, infra-red spectroscopy and electrophysical measurements of the Bi$_{1-x}$Sm$_x$FeO$_3$ nanopowders sintered by the solution combustion method. The combined theoretical-experimental approach allows to establish the influence of the ferro-ionic coupling and size effects in Bi$_{1-x}$Sm$_x$FeO$_3$ nanoparticles on their polar properties.

cond-mat.mtrl-sci↗

arXiv2023

Light-Induced Transitions of Polar State and Domain Morphology of Photo-Ferroelectric Nanoparticles

Using the Landau-Ginzburg-Devonshire approach, we study light-induced phase transitions, evolution of polar state and domain morphology in photo-ferroelectric nanoparticles (NPs). Light exposure increases the free carrier density near the NP surface and may in turn induce phase transitions from the nonpolar paraelectric to the polar ferroelectric phase. Using the uniaxial photo-ferroelectric Sn2P2S6 as an example, we show that visible light exposure induces the appearance and vanishing of striped, labyrinthine or curled domains and changes in the polarization switching hysteresis loop shape from paraelectric curves to double, pinched and single loops, as well as the shifting in the position of the tricritical point. Furthermore, we demonstrate that an ensemble of non-interacting photo-ferroelectric NPs may exhibit superparaelectric-like features at the tricritical point, such as strongly frequency-dependent giant piezoelectric and dielectric responses, which can potentially be exploited for piezoelectric applications.

cond-mat.mtrl-sci↗

arXiv2023

The strain-induced transitions of the piezoelectric, pyroelectric and electrocaloric properties of the CuInP$_2$S$_6$ films

The low-dimensional ferroelectrics, ferrielectrics and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric and pyroelectric properties. The strain engineering and strain control of the ferroelectric properties of layered 2D Van der Waals materials, such as CuInP$_2$(S,Se)$_6$ monolayers, thin films and nanoflakes, are of fundamental interest and especially promising for their advanced applications in nanoscale nonvolatile memories, energy conversion and storage, nano-coolers and sensors. Here, we study the polar, piezoelectric, electrocaloric and pyroelectric properties of thin strained films of a ferrielectric CuInP$_2$S$_6$ covered by semiconducting electrodes and reveal an unusually strong effect of a mismatch strain on these properties. In particular, the sign of the mismatch strain and its magnitude determine the complicated behavior of piezoelectric, electrocaloric and pyroelectric responses. The strain effect on these properties is opposite, i.e., "anomalous", in comparison with many other ferroelectric films, for which the out-of-plane remanent polarization, piezoelectric, electrocaloric and pyroelectric responses increase strongly for tensile strains and decrease or vanish for compressive strains.

cond-mat.mtrl-sci↗

arXiv2023

Size-Induced High Electrocaloric Response of Dense Ferroelectric Nanocomposites

Analytical results obtained within Landau-Ginzburg-Devonshire approach and effective media models, predict that the synergy of size effects and Vegard stresses can significantly enhance the electrocaloric cooling (up to 7 times) of the BaTiO3 nanoparticles in comparison with a bulk BaTiO3. To compare with the considered effective media models, we measured the capacitance-voltage and current-voltage characteristics of the dense nanocomposites consisting of (28-35) vol.% BaTiO3 nanoparticles incorporated in organic polymers and determined experimentally the effective dielectric permittivity and losses of the composites. Generalizing obtained analytical results, various ferroelectric nanoparticles spontaneously stressed by elastic defects, such as oxygen vacancies or any other elastic dipoles, which create a strong chemical pressure, can cause the giant electrocaloric response of dense ferroelectric nanocomposites. We have shown that the advantages of the studied lead-free dense nanocomposites are the good tunability of electrocaloric cooling temperature due to the size effects in ferroelectric nanoparticles and the easy control of the high electrocaloric cooling by electric fields. This makes the dense ferroelectric nanocomposites promising for cooling of conventional and innovative electronic elements, such as FETs with high-temperature superconductor channels.

physics.app-ph↗

arXiv2023

Phase transitions in ferroelectric domain walls

Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study the features of phase transitions in the domain walls, which are potentially detectable by the scanning probe capacitance microwave microscopy. The finite element modelling based on the Landau-Ginzburg-Devonshire theory is performed for the capacitance changes related with the domain wall motion in a multiaxial ferroelectric BaTiO$_3$.

cond-mat.mtrl-sci↗

arXiv2022

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if the layer thickness is close to the critical thickness of the size-induced ferroelectric-paraelectric phase transition. The quasi-steady-state negative capacitance, being a very slow-varying transient state of the ferroelectric, corresponds to a positive capacitance of the whole system, and so its appearance does not break any thermodynamic principle. Implementation of the quasi-steady-state negative capacitance C_ins of the gate insulator can open the principal possibility to reduce the MOSFET subthreshold swing below the critical value, and to decrease the gate voltage below the fundamental Boltzmann limit. However, we failed to found the parameters for which C_ins is negative in the quasi-steady states; and thus, the negative C_(HfO_2 ) cannot reduce the subthreshold swing below the fundamental limit. Nevertheless, the increase in C_ins, related with C_(HfO_2 )<0, can decrease the swing above the limit, reduce device heating during the operation cycles, and thus contribute to further improvements of the MOSFET performances.

physics.app-ph↗