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Li Nian

Publications and source records attributed to Li Nian.

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Human Behavior Simulation: Objectives, Methodologies, and Open Problems

In recent years, human behavior simulation has drawn increasing attention from both academia and industry. The reasons fall into two aspects. First, simulation serves as a critical tool for understanding human behaviors, which has become one of the most important research topics in the history. Second, researchers have gradually reached a consensus that simulation, especially human behavior simulation, is critical for real-world decision-making systems. As a result, lots of human behavior simulation research and applications have sprung up across numerous disciplines in the past few years. In addition to the traditional methods, such as building mathematical and physical models, leveraging the recent advances of deep learning techniques -- especially the nascent Large Language Model technology -- for accurate human behavior simulation has also been one of the hottest research topics. In this study, we provide a comprehensive review of the latest research advancements in human behavior simulation. We summarize the objectives, problem formulations, and commonly used methods and discuss the consistency in the development of related research in different disciplines, which reveals the gaps and opportunities for high-impact research in this promising direction.

cs.HC

Traps and transport resistance: the next frontier for stable state-of-the-art non-fullerene acceptor solar cells

Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

cond-mat.mtrl-sci