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Liang Fu

Publications and source records attributed to Liang Fu.

At least 109 records · Page 6Linked to original sources
arXiv2023

Artificial atoms, Wigner molecules, and emergent Kagome lattice in semiconductor moiré superlattices

Semiconductor moiré superlattices comprise an array of artificial atoms and provide a highly tunable platform for exploring novel electronic phases. We introduce a theoretical framework for studying moiré quantum matter that treats intra-moiré-atom interactions exactly and is controlled in the limit of large moiré period. We reveal an abundance of new physics arising from strong electron interactions when there are multiple electrons within a moiré unit cell. In particular, at filling factor $n=3$, the Coulomb interaction within each three-electron moiré atom leads to a three-lobed ``Wigner molecule''. When their size is comparable to the moiré period, the Wigner molecules form an emergent Kagome lattice. Our work identifies two universal length scales characterizing the kinetic and interaction energies in moiré materials and demonstrates a rich phase diagram due to their interplay.

cond-mat.mes-hall↗
arXiv2023

Dimensional reduction from magnetic field in moiré superlattices

Moiré materials provide a highly tunable platform in which novel electronic phenomena can emerge. We study strained moiré materials in a uniform magnetic field and predict highly anisotropic electrical conductivity which switches easy-axis as magnetic field or strain is varied. The dramatic anisotropy reflects one-dimensional localization (dimensional reduction) of the electron wavefunctions along a crystal axis due to quantum interference effects. This can be understood in an effective one-dimensional quasiperiodic Aubry-André-like models, or in a complementary semiclassical picture. This phenomenon should be observable in strained moiré materials at realistic fields and low strain disorder, as well as unstrained systems with anisotropic Fermi surfaces.

cond-mat.mes-hall↗
arXiv2023

Intertwined fractional quantum anomalous Hall states and charge density waves

Motivated by the recent experimental breakthrough on the observation of the fractional quantum anomalous Hall (FQAH) effects in semiconductor and graphene moiré materials, we explore the rich physics associated with the coexistence of FQAH effect and the charge density wave (CDW) order that spontaneously breaks the translation symmetry. We refer to a state with both properties as "FQAH-crystal". We show that the interplay between FQAH effect and CDW can lead to a rich phase diagram including multiple topological phases and topological quantum phase transitions at the same moiré filling. In particular, we demonstrate the possibility of direct quantum phase transitions from a FQAH-crystal with Hall conductivity $σ_H = - 2/3$ to a trivial CDW insulator with $σ_H = 0$, and more interestingly, to a QAH-crystal with $σ_H= -1$.

cond-mat.str-el↗
arXiv2023

Universal Josephson diode effect

We propose a universal mechanism for the Josephson diode effect in short Josephson junctions. The proposed mechanism is due to finite Cooper pair momentum and is a manifestation of simultaneous breaking of inversion and time-reversal symmetries. The diode efficiency is up to 40%, which corresponds to an asymmetry between the critical currents in opposite directions $I_{c+}/I_{c-} \approx$ 230%. We show that this arises from both the Doppler shift of the Andreev bound state energies and the phase-independent asymmetric current from the continuum. Finally, we propose a simple scheme for achieving finite-momentum pairing, which does not rely on spin-orbit coupling and thus greatly expands existing platforms for the observation of supercurrent diode effects.

cond-mat.supr-con↗
arXiv2023

Fundamental bound on topological gap

We provide a universal tight bound on the energy gap of topological insulators by exploring relationships between topology, quantum geometry, and optical absorption. Applications of our theory to infrared absorption near topological band inversion, magnetic circular dichorism in Chern insulators, and topological gap in moiré materials are demonstrated.

cond-mat.mes-hall↗
arXiv2023

Tunable spin and valley excitations of correlated insulators in $Γ$-valley moiré bands

Moiré superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the low-energy states dramatically affects optoelectronic properties in the constituent TMDs, this degree of freedom has yet to be fully explored in moiré systems. Here, we establish twisted double bilayer WSe$_2$ as an experimental platform to study electronic correlations within $Γ$-valley moiré bands. Through a combination of local and global electronic compressibility measurements, we identify charge-ordered phases at multiple integer and fractional moiré band fillings $ν$. By measuring the magnetic field dependence of their energy gaps and the chemical potential upon doping, we reveal spin-polarized ground states with novel spin polaron quasiparticle excitations. In addition, an applied displacement field allows us to realize a new mechanism of metal-insulator transition at $ν= -1$ driven by tuning between $Γ$- and $K$-valley moiré bands. Together, our results demonstrate control over both the spin and valley character of the correlated ground and excited states in this system.

cond-mat.mes-hall↗
arXiv2023

Zero-field composite Fermi liquid in twisted semiconductor bilayers

Recent experiments have produced evidence for fractional quantum anomalous Hall (FQAH) states at zero magnetic field in the semiconductor moiré superlattice system $t$MoTe$_2$. Here we argue that a composite fermion description, already a unifying framework for the phenomenology of 2d electron gases at high magnetic fields, provides a similarly powerful perspective in this new context. To this end, we present exact diagonalization evidence for composite Fermi liquid states at zero magnetic field in $t$MoTe$_2$ at fillings $n=\frac{1}{2}$ and $n=\frac{3}{4}$. We dub these non-Fermi liquid metals anomalous composite Fermi liquids (ACFLs), and we argue that they play a central organizing role in the FQAH phase diagram. We proceed to develop a long wavelength theory for this ACFL state that offers concrete experimental predictions upon doping the composite Fermi sea, including a Jain sequence of FQAH states and a new type of commensurability oscillations originating from the superlattice potential intrinsic to the system.

cond-mat.mes-hall↗
arXiv2023

Helical trilayer graphene: a moiré platform for strongly-interacting topological bands

Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems with broken $xy$-inversion symmetry ($C_{2z}$) that host flat electronic bands. Here, we explore helical trilayer graphene (HTG), three graphene layers twisted sequentially by the same angle forming two misoriented moiré patterns. Although HTG is globally $C_{2z}$-symmetric, surprisingly we observe clear signatures of topological bands. At a magic angle $θ_\mathrm{m}\approx 1.8^\circ$, we uncover a robust phase diagram of correlated and magnetic states using magnetotransport measurements. Lattice relaxation leads to large periodic domains in which $C_{2z}$ is broken on the moiré scale. Each domain harbors flat topological bands with valley-contrasting Chern numbers $\pm(1,-2)$. We find correlated states at integer electron fillings per moiré unit cell $ν=1,2,3$ and fractional fillings $2/3,7/2$ with the AHE arising at $ν=1,3$ and $2/3,7/2$. At $ν=1$, a time-reversal symmetric phase appears beyond a critical electric displacement field, indicating a topological phase transition. Finally, hysteresis upon sweeping $ν$ points to first-order phase transitions across a spatial mosaic of Chern domains separated by a network of topological gapless edge states. We establish HTG as an important platform that realizes ideal conditions for exploring strongly interacting topological phases and, due to its emergent moiré-scale symmetries, demonstrates a novel way to engineer topology.

cond-mat.mes-hall↗
arXiv2023

Orbital Multiferroicity in Pentalayer Rhombohedral Graphene

Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-functional electrical and magnetic device applications. 2D materials with honeycomb lattices offer exciting opportunities to engineer unconventional multiferroicity, where the ferroic orders are driven purely by the orbital degrees of freedom but not electron spin. These include ferro-valleytricity corresponding to the electron valley and ferro-orbital-magnetism supported by quantum geometric effects. Such orbital multiferroics could offer strong valley-magnetic couplings and large responses to external fields-enabling device applications such as multiple-state memory elements, and electric control of valley and magnetic states. Here we report orbital multiferroicity in pentalayer rhombohedral graphene using low temperature magneto-transport measurements. We observed anomalous Hall signals Rxy with an exceptionally large Hall angle (tanΘH > 0.6) and orbital magnetic hysteresis at hole doping. There are four such states with different valley polarizations and orbital magnetizations, forming a valley-magnetic quartet. By sweeping the gate electric field E we observed a butterfly-shaped hysteresis of Rxy connecting the quartet. This hysteresis indicates a ferro-valleytronic order that couples to the composite field E\cdot B, but not the individual fields. Tuning E would switch each ferroic order independently, and achieve non-volatile switching of them together. Our observations demonstrate a new type of multiferroics and point to electrically tunable ultra-low power valleytronic and magnetic devices.

cond-mat.mes-hall↗
arXiv2023

Angle-resolved transport nonreciprocity and spontaneous symmetry breaking in twisted trilayer graphene

The ability to identify and characterize spontaneous symmetry breaking is central to our understanding of 2D materials with strong correlation, such as the moiré flat bands in magic-angle twisted graphene bilayer and trilayer. In this work, we utilize angle-resolved measurements of transport nonreciprocity to investigate spontaneous symmetry breaking in twisted trilayer graphene. By analyzing the angular dependence of nonreciprocity in both longitudinal and transverse channels, we are able to identify the symmetry axis associated with the underlying electronic order. We report that a hysteretic rotation in the mirror axis can be induced by thermal cycles and a large current bias, which offers unambiguous evidence for the spontaneous breaking of rotational symmetry. Moreover, the onset of nonreciprocity with decreasing temperature coincides with the emergence of orbital ferromagnetism. Combined with the angular dependence of the superconducting diode effect, our findings uncover a direct link between rotational and time-reversal symmetry breaking. These symmetry requirements point towards the exchange-driven instabilities in the momentum space as a possible origin for transport nonreciprocity in tTLG.

cond-mat.mes-hall↗
arXiv2023

Colossal nonreciprocal Hall effect and broadband frequency mixing due to a room temperature nonlinear Hall effect

Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many prospective applications such as rectification and photodetection over a wide range of frequencies. The NR transport reported to date occurs along the longitudinal direction with the NR resistance limited to a few percent of the ohmic resistance. Here we report a transverse nonreciprocal transport phenomenon with divergent nonreciprocity - colossal NR Hall effect. This is revealed in direct current (DC) measurements on the microscale Hall devices made of the Pt wires deposited by focused ion beam (FIB) on Si substrates and the Weyl semimetal NbP with FIB-deposited Pt electrodes at 0 magnetic field. When a DC is applied along the x-axis of the devices Ix, it generates a voltage along the y-axis Vy near room temperature, with Vy quadratically scaling with Ix. The transverse resistance, which shows a sign reversal upon switching the current direction, results from a colossal extrinsic nonlinear Hall effect (NLHE) rooted in the disorder scatterings in the Pt wires. While NbP was not found to show NLHE, the NLHE generated in the Pt electrodes can be transmitted to the NbP Hall devices, which yields a surprisingly large nonlinear anomalous Hall effect in NbP with the Hall angle (${Θ_H}$) far exceeding the record value of the anomalous Hall angle of magnetic conductors at room temperature. Furthermore, we find such a strong NLHE can lead to broadband frequency mixing, with the frequency spectrum of the Hall voltage including 2nd-harmonic generation, sum & difference frequency generations, and other multiple wave mixing components. These results not only demonstrate the concept of the NRHE for the first time but also pave the way for exploring NLHE's applications in Thz communication, imaging, and energy harvesting.

cond-mat.mes-hall↗
arXiv2023

Fractional quantum anomalous Hall states in twisted bilayer MoTe$_2$ and WSe$_2$

We demonstrate via exact diagonalization that AA-stacked TMD homobilayers host fractional quantum anomalous Hall (FQAH) states with fractionally quantized Hall conductance at fractional fillings $n=\frac{1}{3},\, \frac{2}{3}$ and zero magnetic field. While both states are most robust at angles near $θ\approx 2^{\circ}$, the $n=\frac{1}{3}$ state gives way to a charge density wave with increasing twist angle whereas the $n=\frac{2}{3}$ state survives across a much broader range of twist angles. We show that the competition between FQAH states and charge density wave or metallic phases is primarily controlled by the wavefunctions and dispersion of the underlying Chern band, respectively. Additionally, Ising ferromagnetism is found across a broad range of fillings where the system is insulating or metallic alike. The spin gap is enhanced at filling fractions where integer and fractional quantum anomalous Hall states are formed.

cond-mat.mes-hall↗
arXiv2023

Sustainability-Driven Exploration of Topological Material

Topological materials are at the forefront of quantum materials research, offering tremendous potential for next-generation energy and information devices. However, current investigation of these materials remains largely focused on performance and often neglects the crucial aspect of sustainability. Recognizing the pivotal role of sustainability in addressing global pollution, carbon emissions, resource conservation, and ethical labor practices, we present a comprehensive evaluation of topological materials based on their sustainability and environmental impact. Our approach involves a hierarchical analysis encompassing cost, toxicity, energy demands, environmental impact, social implications, and resilience to imports. By applying this framework to over 16,000 topological materials, we establish a sustainable topological materials database. Our endeavor unveils environmental-friendly topological materials candidates which have been previously overlooked, providing insights into their environmental ramifications and feasibility for industrial scalability. The work represents a critical step toward industrial adoption of topological materials, offering the potential for significant technological advancements and broader societal benefits.

cond-mat.mtrl-sci↗
arXiv2023

Observation of Fractionally Quantized Anomalous Hall Effect

The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field.

cond-mat.mes-hall↗
arXiv2023

High-efficiency energy harvesting based on nonlinear Hall rectifier

Noncentrosymmetric quantum materials can convert AC input current into DC transverse current through the nonlinear Hall effect at zero magnetic field. We analyze the AC-DC power conversion efficiency of such ``Hall rectifier'' and suggest its application in wireless charging and energy harvesting. Our key observation is that the development of Hall voltage results in a change of longitudinal resistance, resulting in a violation of Ohm's law due to the nonlinear Hall effect. This feedback mechanism balances the input power and the output power and hence is crucial to understanding the power transfer from source to load. We derive a general expression for the power conversion efficiency in terms of material parameters, external load resistance, and input power. As the Hall current is perpendicular to the electric field and does not generate Joule heating by itself, we obtain high power conversion efficiency when the Hall angle (which increases with the input power) is large and the load resistance is optimized. Promising materials for high-efficiency Hall rectifiers are also discussed.

cond-mat.mes-hall↗
arXiv2023

Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure

Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics.

cond-mat.mes-hall↗
arXiv2023

Itinerant spin polaron and metallic ferromagnetism in semiconductor moiré superlattices

Itinerant spin polaron and metallic ferromagnetism are theoretically predicted in the Mott insulator in semiconductor moiré superlattices doped below and above half filling of the narrow moiré band, respectively. The existence of spin polaron can be directly identified from the kink in the dependence of the charge gap on the magnetic field.

cond-mat.str-el↗
arXiv2023

Electronic ratchet effect in a moiré system: signatures of excitonic ferroelectricity

Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the discovery of an electronic ratchet effect that manifests itself as switchable electronic ferroelectricity in a layer-contrasting graphene-boron nitride moiré heterostructure. Our engineered layer-asymmetric moiré potential landscapes result in layer-polarized localized and itinerant electronic subsystems. At particular fillings of the localized subsystem, we find a ratcheting injection of itinerant carriers in a non-volatile manner, leading to a highly unusual ferroelectric response. Strikingly, the remnant polarization can be stabilized at multiple (quasi-continuous) states with behavior markedly distinct from known ferroelectrics. Our experimental observations, simulations, and theoretical analysis suggest that dipolar excitons are the driving force and elementary ferroelectric units in our system. This signifies a new type of electronic ferroelectricity where the formation of dipolar excitons with aligned moments generates a macroscopic polarization and leads to an electronically-driven ferroelectric response, which we term excitonic ferroelectricity. Such new ferroelectrics, driven by quantum objects like dipolar excitons, could pave the way to innovative quantum analog memory and synaptic devices.

cond-mat.mes-hall↗