arXiv subjects

Liang Fu

Publications and source records attributed to Liang Fu.

At least 145 records · Page 8Linked to original sources

arXiv2022

Tunable Magnonic Chern Bands and Chiral Spin Currents in Magnetic Multilayers

Realization of novel topological phases in magnonic band structures represents a new opportunity for the development of spintronics and magnonics with low power consumption. In this work, we show that in antiparallelly aligned magnetic multilayers, the long-range, chiral dipolar interaction generates bulk bands with non-zero Chern integers and magnonic surface states carrying chiral spin currents. The surface states are strictly localized and can be easily toggled between non-trivial and trivial phases through an external magnetic field. The realization of chiral surface spin currents in this dipolarly coupled heterostructure represents a magnonic implementation of the coupled wire model that has been extensively explored in electronic systems. Our work presents an easy-to-implement system for realizing topological magnonic surface states and low-dissipation spin current transport in a tunable manner.

cond-mat.mes-hall↗

arXiv2021

Josephson diode effect from Cooper pair momentum in a topological semimetal

In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant Josephson diode effect (JDE) in Josephson junctions formed from a type II Dirac semimetal, NiTe2. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value of ~60% when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover the asymmetry changes sign several times with increasing field. These characteristic features are accounted for in a theoretical model based on finite-momentum Cooper pairing derived from spin-helical topological surface states, in an otherwise centrosymmetric system. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to building novel superconducting computing devices using the Josephson diode effect.

cond-mat.supr-con↗

arXiv2021

Unconventional superconductivity due to interband polarization

We analyze in detail the superconductivity that arises in an extended Hubbard model describing a multiband system with repulsive interactions. We show that virtual interband processes induce an effective attractive interaction for small momentum transfers, a situation not found in most models of superconductivity from repulsion. This attraction can be traced back, in real space, to the presence of correlated hopping terms induced by interband polarization. We reveal this physics with both strong-coupling expansion and many-body perturbation theory, supplemented by numerical calculations. Finally, we point out interesting similarities with the problem of interacting electrons in twisted bilayer graphene, suggesting the importance of interband contribution to superconductivity.

cond-mat.supr-con↗

arXiv2021

Moiré metal for catalysis

The search for highly efficient and low-cost catalysts based on earth abundant elements is one of the main driving forces in organic and inorganic chemistry. Current strategies for the heterogeneous catalyst design focus on increasing the density of active regions and the optimization of Gibbs free energy of chemical reaction via doping. In this work, we investigate the chemical properties of moire metal for hydrogen evolution reaction. We show that the local shift of metallic atoms introduces a variation in surface hydrogen bonding strength and leads to the spatially dependent Gibbs free energy for hydrogen absorption. Remarkably, the Gibbs free energy of AB stacked NbS2 is shown to cover the thermoneutral volcano peak, exceeding the efficiency of the current record platinum. The richness of local chemical environment in moire structures provides a unique way to tune the reactivity for various chemical reactions. Our study establishes a recipe for designing superior catalysts from the simple twist or stacking of formerly inactive catalytic metals, and proposes structural moire as a promising nanoengineering method to tune surface properties for chemical adsorption.

cond-mat.mtrl-sci↗

arXiv2021

Magic in twisted transition metal dichalcogenide bilayers

The long wavelength moiré superlattices in twisted 2D structures have emerged as a highly tunable platform for strongly correlated electron physics. We study the moiré bands in twisted transition metal dichalcogenide homobilayers, focusing on WSe$_2$, at small twist angles using a combination of first principles density functional theory, continuum modeling, and Hartree-Fock approximation. We reveal the rich physics at small twist angles $θ<4^\circ$, and identify a particular magic angle at which the top valence moiré band achieves almost perfect flatness. In the vicinity of this magic angle, we predict the realization of a generalized Kane-Mele model with a topological flat band, interaction-driven Haldane insulator, and Mott insulators at the filling of one hole per moiré unit cell. The combination of flat dispersion and uniformity of Berry curvature near the magic angle holds promise for realizing fractional quantum anomalous Hall effect at fractional filling. We also identify twist angles favorable for quantum spin Hall insulators and interaction-induced quantum anomalous Hall insulators at other integer fillings.

cond-mat.mes-hall↗

arXiv2021

Spin-triplet superconductivity from interband effect in doped insulators

Despite being of fundamental importance and potential interest for topological quantum computing, spin-triplet superconductors remain rare in solid state materials after decades of research. In this work, we present a general mechanism for spin-triplet superconductivity in multi-band systems, where a non-retarded pairing interaction between conduction electrons is produced by their electronic repulsion to a third-electron undergoing a virtual interband transition. Our theory is analytically controlled by an interband hybridization parameter, and explicitly demonstrated in doped band insulators with the example of an extended Hubbard model. In light of this theory, we propose that recently discovered dilute superconductors such as ZrNCl and WTe$_2$ are spin-triplet, and compare the expected consequences of our theory with experimental data.

cond-mat.supr-con↗

arXiv2021

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2, and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly-parallel stacked bilayers enables the visualization of moiré ferroelectric domains as well as electric-field-induced domain wall motion with piezoelectric force microscopy (PFM). Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The novel semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties.

cond-mat.mes-hall↗

arXiv2021

Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers

While transition metal dichalcogenide (TMD) based moire materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now. In this work, using first principles calculations and continuum modeling, we reveal the displacement field induced topological moire bands in AB-stacked TMD heterobilayer MoTe2/WSe2. Valley contrasting Chern bands with non-trivial spin texture are formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum spin Hall and interaction induced quantum anomalous Hall effects.

cond-mat.str-el↗

arXiv2021

Layer Hall effect in a 2D topological Axion antiferromagnet

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.

cond-mat.mtrl-sci↗

arXiv2021

Supercurrent parity-meter in a nanowire Cooper-pair transistor

We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-tunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably,this phase offset persists when a subgap state approaches zero energy and, based on theoretical considerations, permits parity measurements of subgap states by supercurrent interferometry. Such supercurrent parity measurements could, in a new series of experiments, provide an alternative approach for manipulating and protecting quantum information stored in the isolated subgap levels of superconducting islands.

cond-mat.mes-hall↗

arXiv2021

Quantum anomalous Hall effect from intertwined moiré bands

Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moiré materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals, stripe phases and continuous Mott transition, have been demonstrated. However, nontrivial band topology has remained elusive. Here we report the observation of a quantum anomalous Hall (QAH) effect in AB-stacked MoTe2/WSe2 moiré heterobilayers. Unlike in the AA-stacked structures, an out-of-plane electric field controls not only the bandwidth but also the band topology by intertwining moiré bands centered at different high-symmetry stacking sites. At half band filling, corresponding to one particle per moiré unit cell, we observe quantized Hall resistance, h/e2 (with h and e denoting the Planck's constant and electron charge, respectively), and vanishing longitudinal resistance at zero magnetic field. The electric-field-induced topological phase transition from a Mott insulator to a QAH insulator precedes an insulator-to-metal transition; contrary to most known topological phase transitions, it is not accompanied by a bulk charge gap closure. Our study paves the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in semiconductor moiré materials.

cond-mat.mes-hall↗

arXiv2021

Topological magnetic textures in magnetic topological insulators

The surfaces of intrinsic magnetic topological insulators (TIs) host magnetic moments exchange-coupled to Dirac electrons. We study the magnetic phases arising from tuning the electron density using variational and exact diagonalization approaches. In the dilute limit, we find that magnetic skrymions are formed which bind to electrons leading to a skyrmion Wigner crystal phase while at higher densities spin spirals accompanied by chiral 1d channels of electrons are formed. The binding of electrons to textures raises the possibility of manipulating textures with electrostatic gating. We determine the phase diagram capturing the competition of intrinsic spin-spin interactions and carrier density and comment on the possible application to experiments in magnetic TIs and spintronic devices such as skyrmion-based memory.

cond-mat.mes-hall↗

arXiv2021

New mechanism and exact theory of superconductivity from strong repulsive interaction

We introduce a new and general mechanism for superconductivity in Fermi systems with strong repulsive interaction. Because kinetic terms are small compared to the bare repulsion, the dynamic of charge carriers is constrained by the the presence of other nearby carriers. By treating kinetic terms as a perturbation around the atomic limit, we show that pairing can be induced by correlated multi-particle tunneling processes that favor two itinerant carriers to be close together. Our analytically-controlled theory provides a quantitative formula relating $T_c$ to microscopic parameters, with maximum $T_c$ reaching about 10% of the Fermi temperature. Our work demonstrates a powerful method for studying strong coupling superconductivity with unconventional pairing symmetry. It also offers a realistic new route to realizing finite angular momentum superfluidity of spin-polarized fermions in optical lattice.

cond-mat.supr-con↗

arXiv2021

Fractional correlated insulating states at $n \pm 1/3$ filled magic angle twisted bilayer graphene

Although much progress has been made on the physics of magic angle twisted bilayer graphene at integer fillings, little attention has been given to fractional fillings. Here we show that the three-peak structure of Wannier orbitals, dictated by the symmetry and topology of flat bands, facilitates the emergence of a novel state at commensurate fractional filling of $ν= n \pm 1/3$. We dub this state a "fractional correlated insulator". Specifically for the filling of $\pm 1/3$ electrons per moiré unit cell, we show that short-range interactions alone imply an approximate extensive entropy due to the "breathing" degree of freedom of an irregular honeycomb lattice that emerges through defect lines. The leading further-range interaction lifts this degeneracy and selects a novel ferromagnetic nematic state that breaks AB/BA sublattice symmetry. The proposed fractional correlated insulating state might underlie the suppression of superconductivity at $ν= 2-1/3$ filling observed in arXiv:2004.04148. Further investigation of the proposed fractional correlated insulating state would open doors to new regimes of correlation effects in MATBG.

cond-mat.mes-hall↗

arXiv2021

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers

Moire superlattices of transition metal dichalcogenide (TMD) bilayers have been shown to host correlated electronic states, which arises from the interplay of emergent moire potential and long-range Coulomb interactions. Here we theoretically investigate structural relaxation and single-particle electronic properties in moire superlattices of transition metal dichalcogenide homobilayer and study the ground state charge orders in the effective honeycomb lattice of MX and XM region. From the large-scale density functional theory calculation and continuum model with layer degrees of freedom, we find that the out of plane gating field creates a tunable charge transfer gap and introduces a mass term in the Dirac spectrum. At the flat band limit, we observe a series of charge-ordered insulating states at various filling n = 1/4, 1/3, 1/2, 2/3, 1 with Monte Carlo simulations, and predict that gating field induces a phase transition between different electron crystals at fixed filling n = 1/2, 2/3. Our work demonstrates that transition metal dichalcogenide homobilayer provides a powerful platform for the investigation of tunable charge transfer insulator and charge orders.

cond-mat.str-el↗

arXiv2021

Continuous Mott transition in semiconductor moiré superlattices

The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids, exciton condensates and unconventional superconductivity. Semiconductor moiré materials realize a highly controllable Hubbard model simulator on a triangular lattice, providing a unique opportunity to drive a metal-insulator transition (MIT) via continuous tuning of the electronic interactions. Here, by electrically tuning the effective interaction strength in MoTe2/WSe2 moiré superlattices, we observe a continuous MIT at a fixed filling of one electron per unit cell. The existence of quantum criticality is supported by the scaling behavior of the resistance, a continuously vanishing charge-gap as the critical point is approached from the insulating side, and a diverging quasiparticle effective mass from the metallic side. We also observe a smooth evolution of the low-temperature magnetic susceptibility across the MIT and find no evidence of long-range magnetic order down to ~ 5% of the Curie-Weiss temperature. The results signal an abundance of low-energy spinful excitations on the insulating side that is further corroborated by the presence of the Pomeranchuk effect on the metallic side. Our results are consistent with the universal critical theory of a continuous MIT from a Landau Fermi liquid to a nonmagnetic Mott insulator in two dimensions.

cond-mat.str-el↗

arXiv2021

Ferromagnetic helical nodal line and Kane-Mele spin-orbit coupling in kagome metal Fe3Sn2

The two-dimensional kagome lattice hosts Dirac fermions at its Brillouin zone corners K and K', analogous to the honeycomb lattice. In the density functional theory electronic structure of ferromagnetic kagome metal Fe$_3$Sn$_2$, without spin-orbit coupling we identify two energetically split helical nodal lines winding along $z$ in the vicinity of K and K' resulting from the trigonal stacking of the kagome layers. We find that hopping across A-A stacking introduces a layer splitting in energy while that across A-B stacking controls the momentum space amplitude of the helical nodal lines. The effect of spin-orbit coupling is found to resemble that of a Kane-Mele term, where the nodal lines can either be fully gapped to quasi-two-dimensional massive Dirac fermions, or remain gapless at discrete Weyl points depending on the ferromagnetic moment orientation. Aside from numerically establishing Fe$_3$Sn$_2$ as a model Dirac kagome metal, our results provide insights into materials design of topological phases from the lattice point of view, where paradigmatic low dimensional lattice models often find realizations in crystalline materials with three-dimensional stacking.

cond-mat.mtrl-sci↗

arXiv2021

Moiré surface states and enhanced superconductivity in topological insulators

Recently, moiré superlattices have been found on the surface of topological insulators (TI) due to the rotational misalignment of topmost layers. In this work, we study the effects of moiré superlattices on the topological surface states using a continuum model of Dirac electrons moving in a periodic potential. Unlike twisted bilayer graphene, moiré surface states cannot host isolated bands due to their topological nature. Instead, we find (high-order) van Hove singularities (VHS) in the moiré band structure that give rise to divergent density of states (DOS) and enhance interaction effects. Due to spin-momentum locking in moiré surface states, possible interaction channels are limited. In the presence of phonon mediated attraction, superconductivity is strongly enhanced by the power-law divergent DOS at high-order VHS. The transition temperature $T_c$ exhibits a power-law dependence on the retarded electron-phonon interaction strength $λ^*$. This enhancement is found to be robust under various perturbations from the high-order VHS.

cond-mat.supr-con↗