arXiv subjects

Liangbo Liang

Publications and source records attributed to Liangbo Liang.

34 records · Page 2Linked to original sources

arXiv2021

Phonon modes and Raman signatures of MnBi2nTe3n+1 (n=1,2,3,4) magnetic topological heterostructures

An intrinsic antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$ can be realized by intercalating Mn-Te bilayer chain in a topological insulator, $\mathrm{Bi_2Te_3}$. $\mathrm{MnBi_2Te_4}$ provides not only a stable platform to demonstrate exotic physical phenomena, but also easy tunability of the physical properties. For example, inserting more $\mathrm{Bi_2Te_3}$ layers in between two adjacent $\mathrm{MnBi_2Te_4}$ weakens the interlayer magnetic interactions between the $\mathrm{MnBi_2Te_4}$ layers. Here we present the first observations on the inter- and intra-layer phonon modes of $\mathrm{MnBi_{2n}Te_{3n+1}}$ (n=1,2,3,4) using cryogenic low-frequency Raman spectroscopy. We experimentally and theoretically distinguish the Raman vibrational modes using various polarization configurations. The two peaks at 66 cm$^{-1}$ and 112 cm$^{-1}$ show an abnormal perturbation in the Raman linewidths below the magnetic transition temperature due to spin-phonon coupling. In $\mathrm{MnBi_4Te_7}$, the $\mathrm{Bi_2Te_3}$ layers induce Davydov splitting of the A$_{1g}$ mode around 137 cm$^{-1}$ at 5 K. Using the linear chain model, we estimate the out-of-plane interlayer force constant to be $(3.98 \pm 0.14) \times 10^{19}$ N/m$^3$ at 5 K, three times weaker than that of $\mathrm{Bi_2Te_3}$. Our work discovers the dynamics of phonon modes of the $\mathrm{MnBi_2Te_4}$ and the effect of the additional $\mathrm{Bi_2Te_3}$ layers, providing the first-principles guidance to tailor the physical properties of layered heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure

We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a complex layered crystal composed of alternating SnS$_2$ like pseudohexagonal and PbS-like pseudotetragonal layers stacked on top of each other, providing a unique platform to study vibrational properties and thermal transport across layers with mass density and phonon mismatches. By using micro-Raman spectroscopy and first-principles Raman simulations, we found that the PbS-like pseudotetragonal structure is mostly composed of Pb$_3$SbS$_4$. We also discovered several low-frequency Raman modes that originate from the intralayer vibrations of the pseudotetragonal layer. Using density functional theory, we determined all vibrational patterns of Franckeite, whose signatures are observed in the Raman spectrum. By studying temperature dependent Raman spectroscopy (300 K - 500 K), we have found different temperature coefficients for both pseudotetragonal and pseudohexagonal layers. We believe that our study will help understand the vibration modes of its complex heterostructure and the thermal properties at the nanoscale.

cond-mat.mes-hall↗

arXiv2021

Magnetostriction of α-RuCl3 flakes in the zigzag phase

Motivated by the possibility of an intermediate U(1) quantum spin liquid phase in out-of-plane magnetic fields and enhanced magnetic fluctuations in exfoliated α-RuCl3 flakes, we study magneto-Raman spectra of exfoliated multilayer α-RuCl3 in out-of-plane magnetic fields of -6 T to 6 T at temperatures of 670 mK - 4 K. While the literature currently suggests that bulk α-RuCl3 is in an antiferromagnetic zigzag phase with R3bar symmetry at low temperature, we do not observe R3bar symmetry in exfoliated α-RuCl3 at low temperatures. While we saw no magnetic field driven transitions, the Raman modes exhibit unexpected stochastic shifts in response to applied magnetic field that are above the uncertainties inferred from Bayesian analysis. These stochastic shifts are consistent with the emergence of magnetostrictive interactions in exfoliated α-RuCl3.

cond-mat.str-el↗

arXiv2020

Polytypism in Few-Layer Gallium Selenide

Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S and Se). Four polytypes of bulk GaSe, designated as beta-, epsilon-, gamma-, and delta-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even for the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurement on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even for the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences for trilayer GaSe. We further found that the AB-type stacking is more stable than the AA'-type stacking in GaSe.

cond-mat.mtrl-sci↗

arXiv2020

Interlayer magnetism in Fe3-xGeTe2

Fe$_{3-x}$GeTe$_2$ is a layered van der Waals magnetic material with a relatively high ordering temperature and large anisotropy. While most studies have concluded the interlayer ordering to be ferromagnetic, there have also been reports of interlayer antiferromagnetism in Fe$_{3-x}$GeTe$_2$. Here, we investigate the interlayer magnetic ordering by neutron diffraction experiments, scanning tunneling microscopy (STM) and spin-polarized STM measurements, density functional theory plus U calculations and STM simulations. We conclude that the layers of Fe$_{3-x}$GeTe$_2$ are coupled ferromagnetically and that in order to capture the magnetic and electronic properties of Fe$_{3-x}$GeTe$_2$ within density functional theory, Hubbard U corrections need to be taken into account.

cond-mat.mtrl-sci↗

arXiv2020

The magnetic, electronic, and light-induced topological properties in two-dimensional hexagonal FeX2 (X = Cl, Br, I) monolayers

Topological materials are fertile ground for investigating topological phases of matter and topological phase transitions. In particular, the quest for novel topological phases in 2D materials is attracting fast growing attention. Here, using Floquet-Bloch theory, we propose to realize chiral topological phases in 2D hexagonal FeX2 (X=Cl, Br, I) monolayers under irradiation of circularly polarized light. Such 2D FeX2 monolayers are predicted to be dynamical stable, and exhibit both ferromagnetic and semiconducting properties. To capture the full topological physics of the magnetic semiconductor under periodic driving, we adopt ab initio Wannier-based tight-binding methods for the Floquet-Bloch bands, with the light-induced band gap closings and openings being obtained as the light field strength increases. The calculations of slab with open boundaries show the existence of chiral edge states. Interestingly, the topological transitions with branches of chiral edge states changing from zero to one and from one to two by tuning the light amplitude are obtained, showing that the topological floquet phase of high Chern number can be induced in the present Floquet-Bloch systems.

cond-mat.mes-hall↗

arXiv2020

Single-defect Memristor in MoS$_2$ Atomic-layer

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials.

cond-mat.mes-hall↗

arXiv2019

Optimized substrates and measurement approaches for Raman spectroscopy of graphene nanoribbons

The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and to track their quality upon substrate transfer. We present a Raman-optimized (RO) device substrate and an optimized mapping approach that allows for acquisition of high-resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO2/Si substrates. We show that this approach is well-suited to routinely monitor the geometry-dependent low-frequency modes of GNRs. In particular, we track the radial breathing-like mode (RBLM) and the shear-like mode (SLM) for 5-, 7- and 9-atom wide armchair GNRs (AGNRs) and compare their frequencies with first-principles calculations.

cond-mat.mtrl-sci↗

arXiv2019

Substrate transfer and ex situ characterization of on-surface synthesized graphene nanoribbons

Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. This contribution addresses some of the most important challenges, including GNR fabrication scalability, substrate transfer, long-term stability under ambient conditions and ex situ characterization. We focus on 7- and 9-atom wide armchair graphene nanoribbons (i.e, 7-AGNR; and 9-AGNR) grown on 200 nm Au(111)/mica substrates using a high throughput system. Transfer of both, 7- and 9-AGNRs from their Au growth sub-strate onto various target substrates for additional characterization is accomplished utilizing a polymer-free method that avoids residual contamination. This results in a homogeneous GNR film morphology with very few tears and wrinkles, as examined by atomic force microscopy. Raman spectroscopy indicates no significant degradation of GNR quality upon substrate transfer, and reveals that GNRs have remarkable stability under ambient conditions over a 24-month period. The transferred GNRs are analyzed using multi-wavelength Raman spectroscopy, which provides detailed insight into the wavelength dependence of the width-specific vibrational modes. Finally, we characterize the optical properties of 7- and 9-AGNRs via ultra-violet-visible (UV-Vis) spectroscopy

cond-mat.mtrl-sci↗

arXiv2018

Direct writing of heterostructures in single atomically precise graphene nanoribbons

Precision control of interfacial structures and electronic properties is the key to the realization of functional heterostructures. Here, utilizing the scanning tunneling microscope (STM) both as a manipulation and characterization tool, we demonstrate the fabrication of a heterostructure in a single atomically precise graphene nanoribbon (GNR) and report its electronic properties. The heterostructure is made of a seven-carbon-wide armchair GNR and a lower band gap intermediate ribbon synthesized bottom-up from a molecular precursor on an Au substrate. The short GNR segments are directly written in the ribbon with an STM tip to form atomic precision intraribbon heterostructures. Based on STM studies combined with density functional theory calculations, we show that the heterostructure has a type-I band alignment, with manifestations of quantum confinement and orbital hybridization. Our finding demonstrates a feasible strategy to create a double barrier quantum dot structure with atomic precision for novel functionalities, such as negative differential resistance devices in GNR-based nanoelectronics.

cond-mat.mes-hall↗

arXiv2018

Design of Atomically Precise Nanoscale Negative Differential Resistance Devices

Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with atomic-scale components. Here we investigate negative differential resistance (NDR) devices based on atomically precise graphene nanoribbons. Our computational evaluation of the traditional double-barrier resonant tunneling diode NDR structure uncovers important issues at the atomic scale, concerning the need to minimize the tunneling current between the leads while achieving high peak current. We propose a new device structure consisting of multiple short segments that enables high current by the alignment of electronic levels across the segments while enlarging the tunneling distance between the leads. The proposed structure can be built with atomic precision using a scanning tunneling microscope (STM) tip during an intermediate stage in the synthesis of an armchair nanoribbon. An experimental evaluation of the band alignment at the interfaces and an STM image of the fabricated active part of the device are also presented. This combined theoretical-experimental approach opens a new avenue for the design of nanoscale devices with atomic precision.

cond-mat.mes-hall↗

arXiv2018

Distinct spin-lattice and spin-phonon interactions in monolayer magnetic CrI$_3$

We apply the density-functional theory to study various phases (including non-magnetic (NM), anti-ferromagnetic (AFM), and ferromagnetic (FM)) in monolayer magnetic chromium triiodide (CrI$_3$), a recently fabricated 2D magnetic material. It is found that: (1) the introduction of magnetism in monolayer CrI$_3$ gives rise to metal-to-semiconductor transition; (2) the electronic band topologies as well as the nature of direct and indirect band gaps in either AFM or FM phases exhibit delicate dependence on the magnetic ordering and spin-orbit coupling; and (3)the phonon modes involving Cr atoms are particularly sensitive to the magnetic ordering, highlighting distinct spin-lattice and spin-phonon coupling in this magnet. First-principles simulations of the Raman spectra demonstrate that both frequencies and intensities of the Raman peaks strongly depend on the magnetic ordering. The polarization dependent $A_{1g}$ modes at 77 cm$^{-1}$ and 130 cm$^{-1}$ along with the $E_g$ mode at about 50 cm$^{-1}$ in the FM phase may offer a useful fingerprint to characterize this material. Our results not only provide a detailed guiding map for experimental characterization of CrI$_3$, but also reveal how the evolution of magnetism can be tracked by its lattice dynamics and Raman response.

cond-mat.mes-hall↗

arXiv2017

High-temperature magnetostructural transition in van der Waals-layered a-MoCl3

The crystallographic and magnetic properties of the cleavable 4d3 transition metal compound a-MoCl3 are reported, with a focus on the behavior above room temperature. Crystals were grown by chemical vapor transport and characterized using temperature dependent x-ray diffraction, Raman spectroscopy, and magnetization measurements. A structural phase transition occurs near 585 K, at which the Mo-Mo dimers present at room temperature are broken. A nearly regular honeycomb net of Mo is observed above the transition, and an optical phonon associated with the dimerization instability is identified in the Raman data and in first-principles calculations. The crystals are diamagnetic at room temperature in the dimerized state, and the magnetic susceptibility increases sharply at the structural transition. Moderately strong paramagnetism in the high-temperature structure indicates the presence of local moments on Mo. This is consistent with results of spin-polarized density functional theory calculations using the low- and high-temperature structures. Above the magnetostructural phase transition the magnetic susceptibility continues to increase gradually up to the maximum measurement temperature of 780 K, with a temperature dependence that suggests two-dimensional antiferromagnetic correlations.

cond-mat.mtrl-sci↗

arXiv2017

High conduction hopping behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits

Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselenide and tungsten disulfide by focused He$^+$ irradiation. Pseudo-metallic behavior was induced by irradiating the materials with a dose of ~1x10$^{16} He^+/cm^2$ to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe$_2$ at a critical dose of 1x10$^{16} He^+/cm^2$. First-principles calculations confirm the semiconductor-to-metallic transition of WSe$_2$ after pore and edge defects were introduced by He$^+$ irradiation. The hopping conduction was utilized to direct-write resistor loaded logic circuits in WSe$_2$ and WS$_2$ with a voltage gain of greater than 5. Edge contacted thin film transistors were also fabricated with a high on/off ratio (> 10$^6$), demonstrating potential for the formation of atomically thin circuits.

cond-mat.mtrl-sci↗

arXiv2017

Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials

Two-dimensional (2D) layered materials have been extensively studied owing to their fascinating and technologically relevant properties. Their functionalities can be often tailored by the interlayer stacking pattern. Low-frequency (LF) Raman spectroscopy provides a quick, non-destructive and inexpensive optical technique for stacking characterization, since the intensities of LF interlayer vibrational modes are sensitive to the details of the stacking. A simple and generalized interlayer bond polarizability model is proposed here to explain and predict how the LF Raman intensities depend on complex stacking sequences for any thickness in a broad array of 2D materials, including graphene, MoS2, MoSe2, NbSe2, Bi2Se3, GaSe, h-BN, etc. Additionally, a general strategy is proposed to unify the stacking nomenclature for these 2D materials. Our model reveals the fundamental mechanism of LF Raman response to the stacking, and provides general rules for stacking identification.

cond-mat.mes-hall↗

arXiv2015

Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus

As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependence study and group theory analysis. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are much more sensitive to interlayer coupling and thus their frequencies show much stronger dependence on the number of layers. Hence, they could be used as effective means to probe both the crystalline orientation and thickness for few-layer BP. Furthermore, the temperature dependence study shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which are known to exhibit anharmonicity.

cond-mat.mtrl-sci↗