arXiv subjects

Lieuwe B. Leene

Publications and source records attributed to Lieuwe B. Leene.

2 recordsLinked to original sources

arXiv2021

Hybrid CMOS/Memristor Circuit Design Methodology

RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end design flow for RRAM-based electronics, from the introduction of a custom RRAM model into our chosen CAD tool to performing layout-versus-schematic and post-layout checks including the RRAM device. We envisage that this step-by-step guide to introducing RRAM into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with RRAM-enhanced systems.

cs.ET↗

arXiv2019

A 68 uW 31 kS/s Fully-Capacitive Noise-Shaping SAR ADC with 102 dB SNDR

This paper presents a 17 bit analogue-to-digital converter that incorporates mismatch and quantisation noise-shaping techniques into an energy-saving 10 bit successive approximation quantiser to increase the dynamic range by another 42 dB. We propose a novel fully-capacitive topology which allows for high-speed asynchronous conversion together with a background calibration scheme to reduce the oversampling requirement by 10x compared to prior-art. A 0.18 um CMOS technology is used to demonstrate preliminary simulation results together with analytic measures that optimise parameter and topology selection. The proposed system is able to achieve a FoMS of 183 dB for a maximum signal bandwidth of 15.6 kHz while dissipating 68 uW from a 1.8 V supply. A peak SNDR of 102 dB is demonstrated for this rate with a 0.201 mm^2 area requirement.

cs.AR↗