arXiv subjects

Lieven M. K. Vandersypen

Publications and source records attributed to Lieven M. K. Vandersypen.

At least 73 records · Page 4Linked to original sources

arXiv2014

Nuclear Spin Dynamics in Double Quantum Dots: Multi-Stability, Dynamical Polarization, Criticality and Entanglement

We theoretically study the nuclear spin dynamics driven by electron transport and hyperfine interaction in an electrically-defined double quantum dot (DQD) in the Pauli-blockade regime. We derive a master-equation-based framework and show that the coupled electron-nuclear system displays an instability towards the buildup of large nuclear spin polarization gradients in the two quantum dots. In the presence of such inhomogeneous magnetic fields, a quantum interference effect in the collective hyperfine coupling results in sizable nuclear spin entanglement between the two quantum dots in the steady state of the evolution. We investigate this effect using analytical and numerical techniques, and demonstrate its robustness under various types of imperfections.

cond-mat.mes-hall↗

arXiv2013

Steady-State Entanglement in the Nuclear Spin Dynamics of a Double Quantum Dot

We propose a scheme for the deterministic generation of steady-state entanglement between the two nuclear spin ensembles in an electrically defined double quantum dot. Due to quantum interference in the collective coupling to the electronic degrees of freedom, the nuclear system is actively driven into a two-mode squeezed-like target state. The entanglement build-up is accompanied by a self-polarization of the nuclear spins towards large Overhauser field gradients. Moreover, the feedback between the electronic and nuclear dynamics leads to multi-stability and criticality in the steady-state solutions.

cond-mat.mes-hall↗

arXiv2013

Photon- and phonon-assisted tunneling in the three-dimensional charge stability diagram of a triple quantum dot array

We report both photon- and phonon-assisted tunneling transitions in a linear array of three quantum dots, which can only be understood by considering the full three-dimensionality of the charge stability diagram. Such tunneling transitions potentially contribute to leakage of qubits defined in this system. A detailed understanding of these transitions is important as they become more abundant and complex to analyze as quantum dot arrays are scaled up.

cond-mat.mes-hall↗

arXiv2013

Long-range coherent coupling in a quantum dot array

Controlling long-range quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-range correlations requires sequential local operations. Here we show that two distant sites can be tunnel coupled directly. The coupling is mediated by virtual occupation of an intermediate site, with a strength that is controlled via the energy detuning of this site. It permits a single charge to oscillate coherently between the outer sites of a triple dot array without passing through the middle, as demonstrated through the observation of Landau-Zener-Stückelberg interference. The long-range coupling significantly improves the prospects of fault-tolerant quantum computation using quantum dot arrays and opens up new avenues for performing quantum simulations in nanoscale devices.

cond-mat.mes-hall↗

arXiv2012

Quantum Dots at Room Temperature carved out from Few-Layer Graphene

We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to be in the 1 nm range. The large addition energies allow for Coulomb blockade at room temperature, with possible application to single-electron devices.

cond-mat.mes-hall↗

arXiv2012

Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing

We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a-C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is aided by the high temperatures involved and by the van der Waals interactions with the substrate. Furthermore, in the presence of a-C, graphene can grow from the borders of holes and form a seamless graphene sheet, a novel finding that has not been reported before and that is reproduced by the simulations as well. These findings open up new avenues for bottom-up engineering of graphene-based devices.

cond-mat.mtrl-sci↗

arXiv2012

Lattice Expansion in Seamless Bi layer Graphene Constrictions at High Bias

Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias, little to nothing is known. To this end we investigated bi-layer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution transmission electron microscopy. We directly observe a highly localized anomalously large lattice expansion inside the constriction. Both the current density and lattice expansion increase as the bi-layer graphene constriction narrows. As the constriction width decreases below 10 nm, shortly before failure, the current density rises to 4 \cdot 109 A cm-2 and the constriction exhibits a lattice expansion with a uniaxial component showing an expansion approaching 5 % and an isotropic component showing an expansion exceeding 1 %. The origin of the lattice expansion is hard to fully ascribe to thermal expansion. Impact ionization is a process in which charge carriers transfer from bonding states to antibonding states thus weakening bonds. The altered character of C-C bonds by impact ionization could explain the anomalously large lattice expansion we observe in seamless bi-layer graphene constrictions. Moreover, impact ionization might also contribute to the observed anisotropy in the lattice expansion, although strain is probably the predominant factor.

cond-mat.mes-hall↗

arXiv2012

Gate defined zero- and one-dimensional confinement in bilayer graphene

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be electrostatically induced by applying appropriate voltages to the gates. The high quality of the devices becomes apparent from conductance quantization in the constrictions at low temperature. The islands exhibit clear Coulomb blockade and single-electron transport.

cond-mat.mes-hall↗

arXiv2012

Graphene at high bias: cracking, layer by layer sublimation and fusing

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In other samples we find layer-by-layer evaporation of few-layer graphene, which could be exploited for the controlled production of single layer graphene from multi-layered samples. Surprisingly, we even find that two pieces of graphene that overlap can heal out at high bias and form one continuous sheet. These findings open up new avenues to structure graphene for specific device applications.

cond-mat.mes-hall↗

arXiv2012

Zero-bias conductance peak and Josephson effect in graphene-NbTiN junctions

We report electronic transport measurements of graphene contacted by NbTiN electrodes, which at low temperature remain superconducting up to at least 11 Tesla. In devices with a single superconducting contact, we find a more than twofold enhancement of the conductance at zero bias, which we interpret in terms of reflectionless tunneling. In devices with two superconducting contacts, we observe the Josephson effect, bipolar supercurrents and Fraunhofer patterns.

cond-mat.mes-hall↗

arXiv2012

Room-temperature gating of molecular junctions using few-layer graphene nanogap electrodes

We report on a method to fabricate and measure gateable molecular junctions which are stable at room temperature. The devices are made by depositing molecules inside a few-layer graphene nanogap, formed by feedback controlled electroburning. The gaps have separations on the order of 1-2 nm as estimated from a Simmons model for tunneling. The molecular junctions display gateable IV-characteristics at room temperature.

cond-mat.mes-hall↗

arXiv2010

DNA Translocation through Graphene Nanopores

Nanopores -- nanosized holes that can transport ions and molecules -- are very promising devices for genomic screening, in particular DNA sequencing. Both solid-state and biological pores suffer from the drawback, however, that the channel constituting the pore is long, viz. 10-100 times the distance between two bases in a DNA molecule (0.5 nm for single-stranded DNA). Here, we demonstrate that it is possible to realize and use ultrathin nanopores fabricated in graphene monolayers for single-molecule DNA translocation. The pores are obtained by placing a graphene flake over a microsize hole in a silicon nitride membrane and drilling a nanosize hole in the graphene using an electron beam. As individual DNA molecules translocate through the pore, characteristic temporary conductance changes are observed in the ionic current through the nanopore, setting the stage for future genomic screening.

physics.bio-ph↗

arXiv2010

Wedging Transfer of Nanostructures

We report a versatile water-based method for transferring nanostructures onto surfaces of various shapes and compositions. The transfer occurs through the intercalation of a layer of water between a hydrophilic substrate and a hydrophobic nanostructure (for example, graphene flakes, carbon nanotubes, metallic nanostructures, quantum dots, etc) locked within a hydrophobic polymer thin film. As a result, the film entrapping the nanostructure is lifted off and floats at the air-water interface. The nanostructure can subsequently be deposited onto a target substrate by the removal of the water and the dissolution of the polymeric film. We show examples where graphene flakes and patterned metallic nanostructures are precisely transferred onto a specific location on a variety of patterned substrates, even on top of curved objects such as microspheres. The method is simple to use, fast, and does not require advanced equipment.

cond-mat.mes-hall↗

arXiv2009

Gate-defined graphene double quantum dot and excited state spectroscopy

A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the weakly coupled double dot regime. We extract from the measurements all relevant capacitances of the double dot system, as well as the quantized level spacing.

cond-mat.mes-hall↗

arXiv2009

Electrostatic confinement of electrons in graphene nano-ribbons

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn junctions are induced by the gate voltages, electrons are still confined, as a result of strong disorder, but in a larger area. Measurements on five other devices with different dimensions yield consistent results.

cond-mat.mes-hall↗

arXiv2008

In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling". Upon noise reduction, the noise power spectrum generally changes from Lorentzian to $1/f$ type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.

cond-mat.mes-hall↗

arXiv2007

Gate-induced insulating state in bilayer graphene devices

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state - with large suppression of the conductivity - in bilayer graphene, by using a double-gate device configuration that allows an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.

cond-mat.mes-hall↗

arXiv2007

Aharonov-Bohm effect in graphene

We investigate experimentally transport through ring-shaped devices etched in graphene and observe clear Aharonov-Bohm conductance oscillations. The temperature dependence of the oscillation amplitude indicates that below 1 K the phase coherence length is comparable to or larger than the size of the ring. An increase in the amplitude is observed at high magnetic field, when the cyclotron diameter becomes comparable to the width of the arms of the ring. By measuring the dependence on gate voltage, we also observe an unexpected linear dependence of the oscillation amplitude on the ring conductance, which had not been reported earlier in rings made using conventional metals or semiconducting heterostructures.

cond-mat.mes-hall↗