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Lifang Hu

Publications and source records attributed to Lifang Hu.

3 recordsLinked to original sources

Non-local low energy neutral excitations in a strongly disordered triangular Mott magnet Cr$_3$Se$_2$Br$_5$

Understanding if low-energy excitations can remain itinerant in the presence of strong disorder remains a central challenge in frustrated quantum magnets, where disorder is generally expected to localize excitations through Anderson-like mechanisms. Here we report the emergence of charge-neutral itinerant excitations in a van der Waals compound Cr$_3$Se$_2$Br$_5$, a strongly disordered $S = 3/2$ Mott insulator with a frustrated triangular lattice. Structural analysis reveals substantial intrinsic disorder arising from Cr-site deficiency and Se/Br-site mixing, which appear to be fixed and cannot be readily tuned. No long-range magnetic order or conventional glassy behavior is observed. In addition to its highly insulating nature, the magnetic specific heat C_mag/T and thermal conductivity \k{appa}_xx/T both exhibit linear temperature dependencies with substantial finite intercepts. In particular, a sizeable field-independent residual term $\kappa/T \approx 0.03~\mathrm{W\,m^{-1}\,K^{-2}}$ is observed, providing compelling evidence of itinerant low-energy excitations that carry entropy without charge. These findings conceptually advance our understanding of quantum matter by demonstrating a rare regime where the interplay of disorder, frustration, and electronic correlations actively reshapes the nature of low-energy excitations, allowing itinerant neutral excitations to coexist with strong intrinsic disorder.

cond-mat.str-el

Solid-State Reactions at Niobium-Germanium Interfaces in Hybrid Superconductor-Semiconductor Devices

Hybrid Superconductor-Semiconductor (S-Sm) materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells (Ge QWs) have been among the semiconducting platforms interfaced with superconducting Al to realize voltage tunable Josephson junctions. Here, we explore Nb as a superconducting material in direct contact with Ge channels by focusing on the solid-state reactions at the Nb/Ge interfaces. We employ Nb evaporation at cryogenic temperatures (100 K) to establish a baseline structure with atomically and chemically abrupt Nb/Ge interfaces. By conducting systematic photoelectron spectroscopy and transport measurements on Nb/Ge samples across varying annealing temperatures, we elucidated the influence of Ge out-diffusion on the ultimate performance of superconducting electronics. This study underlines the need for low-temperature growth to minimize chemical intermixing and band bending at the Nb/Ge interfaces.

cond-mat.supr-con

Premelting-directed interfacial design of nanoshell-coated cells in directional freezing and thawing

Freezing interface interacting with soft cells is a core issue in cryopreservation. However, most of existing cryopreservation approaches face challenges such as complex processing and poor controllability. Herein we report a new, nanotechnology-based method to modulate interfacial interactions between ice and cells via the premelting theory. Through the interfacial design by controllably modifying biocompatible nanoshells on the surface of cells, the effective Hamaker constant between cells and ice can be modified. The thickness of premelted films between cells and ice is further regulated, and directional migration of coated cells occurs in a thermal gradient to achieve directional thawing of coated cells. The decreased mortality of freezing coated cells suggests the premelting modulation in freezing and thawing can effectively protect cells from mechanical damage of ice formation during freezing and ice recrystallization during thawing.

physics.app-ph