arXiv subjects

Lillian Pentecost

Publications and source records attributed to Lillian Pentecost.

7 recordsLinked to original sources

arXiv2026

COFFEE: A Carbon-Modeling and Optimization Framework for HZO-based FeFET eNVMs

Information and communication technologies account for a growing portion of global environmental impacts. While emerging technologies, such as emerging non-volatile memories (eNVM), offer a promising solution to energy efficient computing, their end-to-end footprint is not well understood. Understanding the environmental impact of hardware systems over their life cycle is the first step to realizing sustainable computing. This work conducts a detailed study of one example eNVM device: hafnium-zirconium-oxide (HZO)-based ferroelectric field-effect transistors (FeFETs). We present COFFEE, the first carbon modeling framework for HZO-based FeFET eNVMs across life cycle, from hardware manufacturing (embodied carbon) to use (operational carbon). COFFEE builds on data gathered from a real semiconductor fab and device fabrication recipes to estimate embodied carbon, and architecture level eNVM design space exploration tools to quantify use-phase performance and energy. Our evaluation shows that, at 2 MB capacity, the embodied carbon per unit area overhead of HZO-FeFETs can be up to 11% higher than the CMOS baseline, while the embodied carbon per MB remains consistently about 4.3x lower than SRAM across different memory capacity. A further case study applies COFFEE to an edge ML accelerator, showing that replacing the SRAM-based weight buffer with HZO-based FeFET eNVMs reduces embodied carbon by 42.3% and operational carbon by up to 70%.

cs.AR↗

arXiv2022

NVMExplorer: A Framework for Cross-Stack Comparisons of Embedded Non-Volatile Memories

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density and energy efficiency, and the actively expanding field of emerging, embeddable non-volatile memory (eNVM) technologies is providing many potential candidates to satisfy this need. Each technology proposal presents distinct trade-offs in terms of density, read, write, and reliability characteristics, and we present a comprehensive framework for navigating and quantifying these design trade-offs alongside realistic system constraints and application-level impacts. This work evaluates eNVM-based storage for a range of application and system contexts including machine learning on the edge, graph analytics, and general purpose cache hierarchy, in addition to describing a freely available (http://nvmexplorer.seas.harvard.edu/) set of tools for application experts, system designers, and device experts to better understand, compare, and quantify the next generation of embedded memory solutions.

cs.ET↗

arXiv2021

EdgeBERT: Sentence-Level Energy Optimizations for Latency-Aware Multi-Task NLP Inference

Transformer-based language models such as BERT provide significant accuracy improvement for a multitude of natural language processing (NLP) tasks. However, their hefty computational and memory demands make them challenging to deploy to resource-constrained edge platforms with strict latency requirements. We present EdgeBERT, an in-depth algorithm-hardware co-design for latency-aware energy optimization for multi-task NLP. EdgeBERT employs entropy-based early exit predication in order to perform dynamic voltage-frequency scaling (DVFS), at a sentence granularity, for minimal energy consumption while adhering to a prescribed target latency. Computation and memory footprint overheads are further alleviated by employing a calibrated combination of adaptive attention span, selective network pruning, and floating-point quantization. Furthermore, in order to maximize the synergistic benefits of these algorithms in always-on and intermediate edge computing settings, we specialize a 12nm scalable hardware accelerator system, integrating a fast-switching low-dropout voltage regulator (LDO), an all-digital phase-locked loop (ADPLL), as well as, high-density embedded non-volatile memories (eNVMs) wherein the sparse floating-point bit encodings of the shared multi-task parameters are carefully stored. Altogether, latency-aware multi-task NLP inference acceleration on the EdgeBERT hardware system generates up to 7x, 2.5x, and 53x lower energy compared to the conventional inference without early stopping, the latency-unbounded early exit approach, and CUDA adaptations on an Nvidia Jetson Tegra X2 mobile GPU, respectively.

cs.AR↗

arXiv2021

Application-driven Design Exploration for Dense Ferroelectric Embedded Non-volatile Memories

The memory wall bottleneck is a key challenge across many data-intensive applications. Multi-level FeFET-based embedded non-volatile memories are a promising solution for denser and more energy-efficient on-chip memory. However, reliable multi-level cell storage requires careful optimizations to minimize the design overhead costs. In this work, we investigate the interplay between FeFET device characteristics, programming schemes, and memory array architecture, and explore different design choices to optimize performance, energy, area, and accuracy metrics for critical data-intensive workloads. From our cross-stack design exploration, we find that we can store DNN weights and social network graphs at a density of over 8MB/mm^2 and sub-2ns read access latency without loss in application accuracy.

cs.DC↗

arXiv2021

Logic Compatible High-Performance Ferroelectric Transistor Memory

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trapping and detrapping at the interface. We demonstrate low voltage, high speed memory operation with high write endurance using an IL-free back-end-of-line (BEOL) compatible FeFET. We fabricate IL-free FeFETs with 28nm channel length and 126nm width under a thermal budget <400C by integrating 5nm thick Hf0.5Zr0.5O2 gate stack with amorphous Indium Tungsten Oxide (IWO) semiconductor channel. We report 1.2V memory window and read current window of 10^5 for program and erase, write latency of 20ns with +/-2V write pulses, read-after-write latency <200ns, write endurance cycles exceeding 5x10^10 and 2-bit/cell programming capability. Array-level analysis establishes IL-free BEOL FeFET as a promising candidate for logic-compatible high-performance on-chip buffer memory and multi-bit weight cell for compute-in-memory accelerators.

cond-mat.mes-hall↗

arXiv2020

MLPerf Training Benchmark

Machine learning (ML) needs industry-standard performance benchmarks to support design and competitive evaluation of the many emerging software and hardware solutions for ML. But ML training presents three unique benchmarking challenges absent from other domains: optimizations that improve training throughput can increase the time to solution, training is stochastic and time to solution exhibits high variance, and software and hardware systems are so diverse that fair benchmarking with the same binary, code, and even hyperparameters is difficult. We therefore present MLPerf, an ML benchmark that overcomes these challenges. Our analysis quantitatively evaluates MLPerf's efficacy at driving performance and scalability improvements across two rounds of results from multiple vendors.

cs.LG↗

arXiv2019

MASR: A Modular Accelerator for Sparse RNNs

Recurrent neural networks (RNNs) are becoming the de facto solution for speech recognition. RNNs exploit long-term temporal relationships in data by applying repeated, learned transformations. Unlike fully-connected (FC) layers with single vector matrix operations, RNN layers consist of hundreds of such operations chained over time. This poses challenges unique to RNNs that are not found in convolutional neural networks (CNNs) or FC models, namely large dynamic activation. In this paper we present MASR, a principled and modular architecture that accelerates bidirectional RNNs for on-chip ASR. MASR is designed to exploit sparsity in both dynamic activations and static weights. The architecture is enhanced by a series of dynamic activation optimizations that enable compact storage, ensure no energy is wasted computing null operations, and maintain high MAC utilization for highly parallel accelerator designs. In comparison to current state-of-the-art sparse neural network accelerators (e.g., EIE), MASR provides 2x area 3x energy, and 1.6x performance benefits. The modular nature of MASR enables designs that efficiently scale from resource-constrained low-power IoT applications to large-scale, highly parallel datacenter deployments.

eess.SP↗