arXiv subjects

Lin-Wang Wang

Publications and source records attributed to Lin-Wang Wang.

At least 37 records · Page 2Linked to original sources

arXiv2021

Photoinduced charge density wave transition like a puppet on a string

Charge density wave (CDW) materials can undergo an ultrafast phase transition after an ultrashort laser pulse excitation, and the suggested underlying mechanisms have always been associated with two main features: excitonic interaction-induced CDW charge order and electron-phonon coupling-induced periodic lattice distortion (PLD). Here, beyond these two mechanisms, we reveal that photoexcitation induced CDW phase transition in the prototypic CDW example 1T-TiSe2 is similar to a puppet on a string: six Ti-Se bonds connected to each distorted Ti atom acting as six strings controlling the PLD and in turn the CDW orders. The photoexcitation induced modulation on charge population of the Ti-Se bonds generates a laser-fluence-dependent interatomic-repulsive force along each Ti-Se bond. The nonequal length of these six Ti-Se bonds gives rise to a net force exerted on the central distorted Ti atom to push it toward the suppressing of the PLD and thus the CDW orders. We further illustrate that the dynamics of each distorted Ti atom behaves as though it attached to a spring in a simple harmonic motion with a fluence-dependent oscillation frequency, uniting two previously reported scaling laws for phase transition time. These findings significantly advance the understanding of CDW instability and provide new insights into how photoexcitation induced modulation on charge population may lead to phase transitions by directly connecting interatomic forces with reaction pathways.

cond-mat.mtrl-sci↗

arXiv2021

Uniting the order and disorder dynamics in photoexcited VO2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory (rt-TDDFT) method, here, we track the motion of individual vanadium (V) ions during PIPT in VO2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

cond-mat.mtrl-sci↗

arXiv2021

Dynamic short-range correlation in photoinduced disorder phase transitions

Ultrafast photoexcitation can induce a nonequilibrium dynamic with electron-lattice interaction, offering an effective way to study photoinduced phase transitions (PIPTs) in solids. The issue that atomic displacements after photoexcitation belong to coherent change or disordered process, has become a controversy in the PIPT community. Using real-time time-dependent density functional theory (rt-TDDFT) simulations, we obtain both the coherent and the disordered PIPTs (dimer dissociation) in IrTe2 with the different electronic occupations. More importantly, we found that in the disordered phase transition, there exists a local correlation between different dimers regarding their dissociation status. One can define vertical groups across the layers. The dimers in the same group will dissociate in a correlated fashion: they either all dissociate, or all not dissociate. On the other hand, the dimers in neighboring groups will have an anti-correlation: if the dimers in one group dissociate, the dimers in the neighboring group tend not to be dissociated, and vice versus.

cond-mat.mtrl-sci↗

arXiv2021

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the last four decades, but the underlying mechanism is still under debate. Here, by utilizing an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability at the photoexcited states rather than by simultaneously breaking of all bonds, as suggested by the inertial model, phonon instability, or Coulombic repulsion mechanisms. Due to this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which in turn creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

cond-mat.mtrl-sci↗

arXiv2021

Eshelby-twisted 3D moire superlattices

Twisted bilayers of van der Waals materials have recently attracted great attention due to their tunable strongly correlated phenomena. Here, we investigate the chirality-specific physics in 3D moiré superlattices induced by Eshelby twist. Our direct DFT calculations reveal helical rotation leads to optical circular dichroism, and chirality-specific nonlinear Hall effect, even though there is no magnetization or magnetic field. Both these phenomena can be reversed by changing the structural chirality. This provides a way to constructing chirality-specific materials.

cond-mat.mtrl-sci↗

arXiv2021

The critical role of hot carrier cooling in optically excited structural transitions

The hot carrier cooling occurs in most photoexcitation-induced phase transitions (PIPTs), but its role has often been neglected in many theoretical simulations as well as in proposed mechanisms. Here, by including the previously ignored hot carrier cooling in real-time time-dependent density functional theory (rt-TDDFT) simulations, we investigated the role of hot carrier cooling in PIPTs. Taking IrTe2 as an example, we reveal that the cooling of hot electrons from the higher energy levels of spatially extended states to the lower energy levels of the localized Ir-Ir dimer antibonding states strengthens remarkably the atomic driving forces and enhances atomic kinetic energy. These two factors combine to dissolute the Ir-Ir dimers on a timescale near the limit of atomic motions, thus initiating a deterministic kinetic phase transition. We further demonstrate that the subsequent cooling induces nonradiative recombination of photoexcited electrons and holes, leading to the ultrafast recovery of the Ir-Ir dimers observed experimentally. These findings provide a complete picture of the atomic dynamics in optically excited structural phase transitions.

physics.comp-ph↗

arXiv2020

Analysis of diagonal G and subspace W approximations within fully self-consistent GW calculations for bulk semiconducting systems

Fully self-consistent GW (sc-GW) methods are now available to evaluate quasiparticle and spectral properties of various molecular and bulk systems. However, such techniques based on the full matrix of G and W are computationally demanding. The routinely used single-shot GW-approximation (G0W0) has an undesirable dependency on the choice of initial exchange-correlation functional. In the literature, many so-called self-consistent GW methods are based on diagonal approximation of G and low-ranking approximation of W. It is thus worth to check how good such approximations are in comparison with the full matrix method. In this work, we consider AlAs, AlP, GaP, and ZnS as the prototype systems to perform sc-GW calculations by expressing the full G matrix using a plane-wave basis set. We compared our sc-GW results with the diagonal G and subspace W approximated sc-GW results (sc-GW-diagG and sc-GW-subW methods). In the sc-GW-diagG method, interacting G is expanded in the eigenvectors of non-interacting G such that only diagonal elements are retained, whereas, the number of eigenmodes is truncated in sc-GW-subW calculations. A systematic analysis of the results obtained from the above techniques is presented. The differences in the quasiparticle bandgap between the approximated and the full matrix sc-GW approaches are mostly less than 1.7% that validates such widely adopted approximations, and also shows how such low-ranking approximation can be used to include higher-order terms like the vertex correction.

cond-mat.mtrl-sci↗

arXiv2020

Image charge interaction correction in charged-defect calculation

Charged-defect calculation using a periodic supercell is a significant class of problems in solid state physics. However, the finite supercell size induces an undesirable long-range image charge Coulomb interaction. Although a variety of methods have been proposed to eliminate such image Coulomb interaction, most of the previous schemes are based on a rough approximation of the defect charge screening. In this work, we present a rigorous derivation of the image charge interaction with a new defect screening model where the use of bulk macroscopic dielectric constant can be avoided. We have verified this approach in comparison with a widely used approach for 12 different defects. Our correction scheme offers a much faster convergence concerning the supercell size for cases with considerable image charge interactions. In those cases, we also found that the nonlinear dielectric screening might play an important role. The proposed new defect screening model will also shed new light on understanding the defect screening properties and can be applied to other defect systems.

cond-mat.mtrl-sci↗

arXiv2019

Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors

Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised analysis of K. Huang's original nonradiative multi-phonon (NMP) theory with ab initio calculations. First, we identify at first-principle level that Huang's concise formula gives the same results as the matrix based formula, and Huang's high temperature formula provides an analytical expression for the coupling constant in Marcus theory. Secondly, the anharmonic effects are corrected by taking into account local phonon mode variation at different charge states of the defect. The corrected capture rates for defects in GaN and SiC agree well with experiments.

cond-mat.mtrl-sci↗

arXiv2019

Borophosphene: a New Anisotropic Dirac Cone Monolayer with High Fermi Velocity and Unique Feature of Self-doping

Two-dimensional (2D) Dirac cone materials exhibit linear energy dispersion at the Fermi level, where the effective masses of carriers are very close to zero and the Fermi velocity is ultrahigh, only 2 ~ 3 orders of magnitude lower than the light velocity. Such the Dirac cone materials have great promise in high-performance electronic devices. Herein, we have employed the genetic algorithms methods combining with first-principles calculations to propose a new 2D anisotropic Dirac cone material, that is, orthorhombic boron phosphide (BP) monolayer named as borophosphene. Molecular dynamics simulation and phonon dispersion have been used to evaluate the dynamic and thermal stability of borophosphene. Because of the unique arrangements of B-B and P-P dimers, the mechanical and electronic properties are highly anisotropic. Of great interest is that the Dirac cone of the borophosphene is robust, independent of in-plane biaxial and uniaxial strains, and can also be observed in its one-dimensional (1D) zigzag nanoribbons and armchair nanotubes. The Fermi velocities are ~ 105 m/s, the same order of magnitude with that of graphene. By using a tight-binding model, the origin of the Dirac cone of borophosphene is analyzed. Moreover, a unique feature of self-doping can be induced by the in-plane biaxial and uniaxial strains of borophosphene and the Curvature effect of nanotubes, which is great beneficial to realizing high speed carriers (holes). Our results suggest that the borophosphene holds a great promise in high-performance electronic devices, which could promote the experimental and theoretical studies to further explore the potential applications of other 2D Dirac cone sheets.

cond-mat.mtrl-sci↗

arXiv2019

Observation of Rydberg exciton polaritons and their condensate in a perovskite cavity

The condensation of half-light half-matter exciton polaritons in semiconductor optical cavities is a striking example of macroscopic quantum coherence in a solid state platform. Quantum coherence is possible only when there are strong interactions between the exciton polaritons provided by their excitonic constituents. Rydberg excitons with high principle value exhibit strong dipole-dipole interactions in cold atoms. However, polaritons with the excitonic constituent that is an excited state, namely Rydberg exciton polaritons (REPs), have not yet been experimentally observed. Here, for the first time, we observe the formation of REPs in a single crystal CsPbBr3 perovskite cavity without any external fields. These polaritons exhibit strong nonlinear behavior that leads to a coherent polariton condensate with a prominent blue shift. Furthermore, the REPs in CsPbBr3 are highly anisotropic and have a large extinction ratio, arising from the perovskite's orthorhombic crystal structure. Our observation not only sheds light on the importance of many-body physics in coherent polariton systems involving higher-order excited states, but also paves the way for exploring these coherent interactions for solid state quantum optical information processing.

cond-mat.mtrl-sci↗

arXiv2019

A large-scale first-principles quantum transport simulation method using plane waves

As the characteristic lengths of advanced electronic devices are approaching the atomic scale, ab initio simulation method, with fully consideration of quantum mechanical effects, becomes essential to study the quantum transport phenomenon in them. However, current widely used non-equilibrium Green's function (NEGF) approach is based on atomic basis set, which usually can only study small system with less than 1000 atoms in practice. Here we present a large-scale quantum transport simulation method using plane waves basis, based on the previously developed plane wave approach (Phys. Rev. B 72, 045417). By applying several high-efficiency parallel algorithms, such as linear-scale ground-state density function theory (DFT) algorithm, folded spectrum method, and filtering technique, we demonstrate that our new method can simulate the system with several thousands of atoms. We also use this method to study several nanowires with about 4000 copper atoms, and show how the shape and point defect affect the transport properties of them. Such quantum simulation method will be useful to investigate and design nanoscale devices, especially the on-die interconnects.

cond-mat.mes-hall↗

arXiv2019

Parallel Transport Time-Dependent Density Functional Theory Calculations with Hybrid Functional on Summit

Real-time time-dependent density functional theory (rt-TDDFT) with hybrid exchange-correlation functional has wide-ranging applications in chemistry and material science simulations. However, it can be thousands of times more expensive than a conventional ground state DFT simulation, hence is limited to small systems. In this paper, we accelerate hybrid functional rt-TDDFT calculations using the parallel transport gauge formalism, and the GPU implementation on Summit. Our implementation can efficiently scale to 786 GPUs for a large system with 1536 silicon atoms, and the wall clock time is only 1.5 hours per femtosecond. This unprecedented speed enables the simulation of large systems with more than 1000 atoms using rt-TDDFT and hybrid functional.

physics.comp-ph↗

arXiv2018

Fast real-time time-dependent density functional theory calculations with the parallel transport gauge

Real-time time-dependent density functional theory (RT-TDDFT) is known to be hindered by the very small time step (attosecond or smaller) needed in the numerical simulation due to the fast oscillation of electron wavefunctions, which significantly limits its range of applicability for the study of ultrafast dynamics. In this paper, we demonstrate that such oscillation can be considerably reduced by optimizing the gauge choice using the parallel transport formalism. RT-TDDFT calculations can thus be significantly accelerated using a combination of the parallel transport gauge and implicit integrators, and the resulting scheme can be used to accelerate any electronic structure software that uses a Schrödinger representation. Using absorption spectrum, ultrashort laser pulse, and Ehrenfest dynamics calculations for example, we show that the new method can utilize a time step that is on the order of $10\sim 100$ attoseconds in a planewave basis set, and is no less than $5\sim 10$ times faster when compared to the standard explicit 4th order Runge-Kutta time integrator. Thanks to the significant increase of the size of the time step, we also demonstrate that the new method is more than 10 times faster in terms of the wall clock time when compared to the standard explicit 4th order Runge-Kutta time integrator for silicon systems ranging from 32 to 1024 atoms

physics.comp-ph↗

arXiv2016

SGO: An ultrafast engine for ab initio atomic structure global optimization by differential evolution

This paper presents a fast method for global search of atomic structures at ab initio level. The structures global optimization (SGO) engine consists of a high-efficiency differential evolution algorithm, accelerated local relaxation methods and an ultrafast plane-wave density functional theory code run on GPU machines. It can search the global-minimum configurations of crystals, two-dimensional materials and quantum clusters without symmetry restriction in a very short time (half or several hours). The engine is also able to search the energy landscape of a given system, which is useful for exploration of materials properties for emerging applications. The exploration of carbon monolayer and platinum atomic clusters found several new stable configurations.

cond-mat.mtrl-sci↗

arXiv2015

Band gap corrections for molecules and solids using Koopmans theorem and Wannier functions

We have proposed a method for correcting the Kohn-Sham eigen energies in the density functional theory (DFT) based on the Koopmans theorem using Wannier functions. The method provides a general approach applicable for molecules and solids for electronic structure calculations. It does not have any adjustable parameters and the computational cost is at the DFT level. For solids, the calculated eigen energies agree well with the experiments for not only the band gaps, but also the energies of other valence and conduction bands. For molecules, the calculated eigen energies agree well with the experimental ionization potentials and electron affinities, and show better trends than the traditional Delta-self-consistent-field (?SCF) results.

physics.comp-ph↗

arXiv2015

A comparative study of ab initio nonradiative recombination rate calculations under different formalisms

Nonradiative carrier recombination is of both great applied and fundamental importance.But the correct ab initio approaches to calculate it remains to be inconclusive. Here we used 5 different formalisms to calculate the nonradiative carrier recombinations of two complex defect structures GaP:Zn_Ga-O_P and GaN:Zn_Ga-V_N, and compared the results with experiments.In order to apply different multiphonon assisted electron transition formalisms, we have calculated the electron-phonon coupling constants by ab initio density functional theory for all phonon modes. Compared with different methods, the capture coefficients calculated by the static coupling theory are 4.30*10^-8 and 1.46*10^-7 cm^3/s for GaP:Zn_Ga-O_P and GaN:Zn_Ga-V_N, which are in good agreement with the experiment results, 4*10^-8 and 3.0*10^-7 cm^3/s respectively. We also provided arguments for why the static coupling theory should be used to calculate the nonradiative decays of semiconductors.

cond-mat.mtrl-sci↗

arXiv2014

Using Light-Switching Molecules to Modulate Charge Mobility in a Quantum Dot Array

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given in our recent work [Chu et al. J. Phys. Chem. C 115, 21409 (2011)], we have investigated the effects of molecular attachment, molecular isomer (trans and cis) and QD size on electron hopping rate using Marcus theory. Our results indicate that molecular attachment has a large impact on the system for both isomers. In the most energetically favorable attachment, the cis isomer provides significantly greater coupling between the two QDs and hence the electron hopping rate is greater compared to the trans isomer. As a result, the carrier mobility of the QD array in the low carrier density, weak external electric field regime is several orders of magnitude higher in the cis compared to the trans configuration. This is the first demonstration of mobility modulation using QDs and azobenzene that could lead to a new type of switching device.

cond-mat.mtrl-sci↗