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Lina Hansen

Publications and source records attributed to Lina Hansen.

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Spatially-resolved multiphoton photoemission from a lateral transition metal dichalcogenide heterostructure

Transition metal dichalcogenides (TMDs) in their monolayer form offer a premier platform for next-generation optoelectronics, particularly through the local manipulation of their robust excitonic states using nanoscale electric fields. These localized states can be dynamically controlled through spatial structuring as well as through ultrafast field modulations driven by tailored optical pulses. Characterizing the resulting rapid, nanoscale charge carrier dynamics requires a technique with exceptional spatial and temporal resolution. Here, we report on the spatio-temporally resolved investigation of ground state and excited state photoemission from a lateral heterostructure built of monolayers of WSe$_2$ and MoSe$_2$ using few-cycle light pulses with a photon energy of 0.62 eV. We utilize photoemission electron microscopy to spatially resolve the highly nonlinear photoemission from the monolayer structure with few tens of nanometer resolution. By varying the laser pulse energy, we extract the nonlinearity of the photoemission process and thus the dynamic binding energy of the photoelectrons before and after optical excitation with high spatial and temporal resolution.

physics.optics

Multiscale carrier-envelope phase characterization of 2-\mu m pulses delivered by a 200-kHz optical parametric amplifier

Light fields with a central wavelength of 2 um are very well suited for strong-field-driven charge carrier control: Their photon energy lies far below the band gap of many materials, while their oscillation period remains significantly shorter than the coherence time of charge carrier oscillations. The resulting potential for field-driven charge carrier control is contingent on the reproducibility of the field structure of such ultrashort laser pulses. Here, we present a compact 200-kHz laser system that delivers ultrashort pulses with a duration of less than 20 fs in the spectral range around 2 um and with a pulse energy of 25 uJ. The electric field structure of the 2-um pulses is characterized in detail. In particular, the carrier-envelope phase (CEP) is measured over a wide range of timescales, from microseconds to hours. Passive stabilization due to difference frequency generation results in a root mean square value of carrier-envelope phase noise of less than 70 mrad over all measured time scales. The applicability of the pulses is demonstrated by measuring CEP-dependent high-order harmonic spectra with energies of up to 160 eV.

physics.optics

Spectrally resolved free electron-light coupling strength in a transition metal dichalcogenide

Recent advancements in electron microscopy have introduced innovative techniques enabling the inelastic interaction of fast electrons with tightly confined and intense light fields. These techniques, commonly summarized under the term photon-induced nearfield electron microscopy now offer unprecedented capabilities for a precise mapping of the characteristics of optical near-fields with remarkable spatial resolution but their spectral resolution were only scarcely investigated. In this study, we employ a strongly chirped and temporally broadband light pulse to investigate the interaction between free electrons and light at the edge of a MoS2 thin film. Our approach unveils the details of electron-light coupling, revealing a pronounced dependence of the coupling strength on both the position and photon energy. Employing numerical simulations of a simplified model system we identify these modulations to be caused by optical interferences between the incident and reflected field as well as an optical mode guided within the transition metal dichalcogenide film.

cond-mat.mes-hall