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Linas Minkevičius

Publications and source records attributed to Linas Minkevičius.

4 recordsLinked to original sources

Principles for single-pixel terahertz imaging based on the engineering of illuminating and collecting nonparaxial diffractive optics

The art of light engineering unveils a world of possibilities through the meticulous manipulation of photonic properties such as intensity, phase, and polarization. The precise control over these optical properties under various conditions finds application in fields spanning communication, light-matter interactions, laser direct writing, and imaging, enriching our technological landscape. In this study, we embark on a journey to establish a rational framework for the design and assembly of nonparaxial THz imaging systems. Our focus centers on a lensless photonic system composed solely of flat-silicon diffractive optics. These elements include the high-resistivity silicon-based nonparaxial Fresnel zone plate, the Fibonacci lens, the Bessel axicon, and the Airy zone plate, all meticulously crafted using laser ablation technology. A systematic exploration of these flat elements in various combinations sheds light on their strengths and weaknesses. Our endeavor extends to the practical application of these optical components, where they illuminate samples and capture the light scattered from these raster-scanned samples using single-pixel detectors. Through a comprehensive examination, we evaluate imaging systems across diverse metrics that include contrast, resolution, depth of field and focus. This multifaceted approach allows us to distill rational design principles for the optimal assembly of THz imaging setups. The findings of this research chart an exciting course toward the development of compact, user-friendly THz imaging systems where sensors and passive optical elements seamlessly integrate into a single chip. These innovations not only enhance capabilities in THz imaging but also pave the way for novel applications, ushering in a new encouraging era of advanced THz photonic technology.

physics.optics

Advantages of optical modulation in terahertz imaging for study of graphene layers

It was demonstrated that optical modulation together with simultaneous terahertz (THz) imaging application enables an increase in contrast by an order of magnitude illustrating hence the technique as convenient contactless tool for characterization of graphene deposited on high-resistivity silicon substrates. It was shown that the single- and double-layer graphene can be discriminated and characterized via variation of THz image contrast using a discrete frequency in a continuous wave mode. Modulation depth of 45 % has been reached, the contrast variation from 0.16 up to 0.23 is exposed under laser illumination for the single and double layer graphene, respectively. The technique was applied in the development and investigation of graphene-based optical diffractive elements for THz imaging systems.

physics.optics

Fibonacci terahertz imaging by silicon diffractive optics

Fibonacci or bifocal terahertz (THz) imaging is demonstrated experimentally employing silicon diffractive zone plate (SDZP) in a continuous wave mode. Images simultaneously recorded in two different planes are exhibited at 0.6 THz frequency with the spatial resolution of wavelength. Multi-focus imaging operation of the Fibonacci lens is compared with a performance of the conventional silicon phase zone plate. Spatial profiles and focal depth features are discussed varying the frequency from 0.3 THz to 0.6 THz. Good agreement between experimental results and simulation data is revealed.

physics.optics

Influence of field effects on the performance of InGaAs-based terahertz radiation detectors

A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvoltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.

physics.ins-det