arXiv subjects

Ling-Xiao Zhao

Publications and source records attributed to Ling-Xiao Zhao.

4 recordsLinked to original sources

arXiv2020

Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure

The discovery of graphene has spurred vigorous investigation of 2D materials, revealing a wide range of extraordinary properties and functionalities. 2D heterostructural materials have recently been fabricated by assembling isolated planes layer-by-layer in a desired sequence. Unusual properties and novel physical phenomena have been unveiled in such layered heterostructures. For example, Hofstadter's butterfly, an intriguing pattern of the energy states of Bloch electrons, was predicted several decades ago to be observable only under unfeasibly strong magnetic fields in conventional materials. But it has been observed recently under current experimental conditions in graphene/BN layered heterostructures, one of the outstanding new kinds of 2D materials. Moreover, another amazing physics phenomenon, Majorana fermions was predicted to exist in heterostructural systems consisting of a superconductor (SC) and a topological insulator (TI) Journal.

cond-mat.mes-hall↗

arXiv2020

Experimental observations indicating the topological nature of the edge states on HfTe5

The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ~80 meV near the Fermi level on the surface monolayer of HfTe5 and that such insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2D nontrivial bulk properties.

cond-mat.mtrl-sci↗

arXiv2019

Mott phase in a van der Waals transition-metal halide at single layer limit

Two-dimensional materials offer opportunities for unravelling unprecedented ordered states at single layer limit. Among such ordered states, Mott phase is rarely explored. Here, we report the Mott phase in van der Waals chromium (II) iodide (CrI2) films. High quality CrI2 films with atomically flat surface and macro size are grown on graphitized 6H-SiC(0001) substrate by molecular beam epitaxy. By in situ low temperature scanning tunneling microscopy and spectroscopy (STM/STS), we reveal that the film has a band gap as large as ~3.2 eV, which is nearly thickness independent. Density functional plus dynamic mean field theory calculations suggest that CrI2 films may be a strong Mott insulator with a ferromagnetically ordered ground state. The Mott phase is corroborated by the spectral band splitting, that is consistent with the extended Hubbard model, and gap reduction at charge dopants. Our study provides a platform for studying correlated electron states at single layer limit.

cond-mat.mes-hall↗

arXiv2016

Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus

We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic pressures. The BP undergoes a topological Lifshitz transition from band semiconductor to a zero-gap Dirac semimetal state, characterized by a weak localization-weak antilocaliation transition at low magnetic fields and the emergence of a nontrivial Berry Phase of detected by SdH magneto-oscillations in magnetoresistance curves. In the transition region, we observe a pressure-dependent negative MR only in the B//I configuration. This negative longitudinal MR is attributed to the Adler-Bell-Jackiw anomaly (topological E$\cdot$B term) in the presence of weak antilocalization corrections.

cond-mat.mtrl-sci↗