arXiv subjects

Lingjie Zhou

Publications and source records attributed to Lingjie Zhou.

5 recordsLinked to original sources

arXiv2026

Visualizing Chiral Edge Modes in Twisted Cuprate Superconductors via Scanning-Probe Quantum Sensing

Recently, unconventional superconductivity hosted by twisted van der Waals (vdW) heterostructures has received immense interest due to the exotic pairing symmetry, electronic interactions and nontrivial topological nature that are naturally relevant to the fast-advancing quantum technologies. Here, we report scanning-probe quantum sensing of nanoscale electromagnetic behaviors of twisted vdW cuprate superconductors. Using single-spin relaxometry, we directly visualize edge modes spontaneously formed in twisted Bi2Sr2CaCu2O8+x (BSCCO). By investigating temperature dependent variations of edge-state-induced quantum spin relaxation, we experimentally evaluate the magnitude of nontrivial topological band gap opened at nodal points in twisted BSCCO and its critical temperature behaviors under different twist angles. We further observe alternating chiral domains defined by edge modes, exploring experimental signatures of in-plane magnetic field-induced topology in 45° twisted BSCCO. Our results advance the current understanding of twisted vdW nodal superconductors, presenting an appealing high-temperature topological superconducting material platform for cutting-edge quantum innovation.

cond-mat.mes-hall↗

arXiv2025

Meissner Effect and Nonreciprocal Charge Transport in Non-Topological 1T-CrTe2/FeTe Heterostructures

Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we employ molecular beam epitaxy to grow a 1T-CrTe2 layer, a two-dimensional ferromagnet with a Curie temperature up to room temperature, on a FeTe layer. These 1T-CrTe2/FeTe heterostructures show superconductivity with a critical temperature of ~12 K. Through magnetic force microscopy measurements, we observe the Meissner effect on the surface of the 1T-CrTe2 layer. Our electrical transport measurements reveal that the 1T-CrTe2/FeTe heterostructures exhibit nonreciprocal charge transport behavior, characterized by a large magneto-chiral anisotropy coefficient. The enhanced nonreciprocal charge transport in 1T-CrTe2/FeTe heterostructures provides a promising platform for exploring the magnetically controllable superconducting diode effect.

cond-mat.supr-con↗

arXiv2025

Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer

In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of unconventional superconductivity. In this work, we employ a plasma-free, carbon buffer layer-assisted confinement epitaxy method to synthesize trilayer gallium (Ga) sandwiched between a graphene layer and a 6H-SiC(0001) substrate, forming an air-stable graphene/trilayer Ga/SiC heterostructure. In this confined light-element Ga layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization between the Ga layer and the SiC substrate. Electrical transport measurements reveal that the in-plane upper critical magnetic field u0Hc2,|| reaches ~21.98T at T=400 mK, approximately 3.38 times the Pauli paramagnetic limit (~6.51T). Angle-resolved photoemission spectroscopy (ARPES) measurements combined with theoretical calculations confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K' valleys of the confined Ga layer strongly hybridized with SiC. Moreover, by incorporating finite relaxation time induced by impurity scattering into an Ising-type superconductivity model, we reproduce the entire temperature-dependent u0Hc2,|| phase diagram. This work establishes a new strategy to realize unconventional pairing wavefunctions by combining quantum confinement and interfacial hybridization effects in superconducting thin films. It also opens new avenues for designing scalable superconducting quantum electronic and spintronic devices through interfacial engineering.

cond-mat.mes-hall↗

arXiv2022

Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films

Two essential ingredients for the quantum anomalous Hall (QAH) effect, i.e. topological and magnetic orders, can be combined by doping magnetic ions into a topological insulator (TI) film. Through this approach, the QAH effect has been realized in chromium (Cr)- and/or vanadium (V)-doped TI (Bi,Sb)2Te3 thin films. In this work, we synthesize both V- and Cr-doped Bi2Te3 thin films with controlled dopant concentration using molecular beam epitaxy (MBE). By performing magneto-transport measurements, we find that both systems show an unusual but yet similar ferromagnetic response with respect to magnetic dopant concentration, specifically the Curie temperature does not increase monotonically but shows a local maximum at a critical dopant concentration. Our angle-resolved photoemission spectroscopy (ARPES) measurements show that the Cr/V doping introduces hole carriers into Bi2Te3, which consequently move the chemical potential toward the charge neutral point. In addition, the Cr/V doping also reduces the spin-orbit coupling of Bi2Te3 which drives it from a nontrivial TI to a trivial semiconductor. The unusual ferromagnetic response observed in Cr/V-doped Bi2Te3 thin films is attributed to the dopant-concentration-induced magnetic exchange interaction, which displays the evolution from the van Vleck-type ferromagnetism in a nontrivial magnetic TI to the Ruderman-Kittel-Kasuya-Yosida (RKKY)-type ferromagnetism in a trivial diluted magnetic semiconductor. Our work provides insights into the ferromagnetic properties of magnetically doped TI thin films and facilitates the pursuit of high-temperature QAH effect.

cond-mat.mes-hall↗

arXiv2019

Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T'-WSe2 Thin Film

Two-dimensional (2D) transition metal dichalcogenides MX2 (M = Mo, W, X = S, Se, Te) attracts enormous research interests in recent years. Its 2H phase possesses an indirect to direct bandgap transition in 2D limit, and thus shows great application potentials in optoelectronic devices [1]. The 1T' crystalline phase transition can drive the monolayer MX2 to be a 2D topological insulator. Here we realized the molecular beam epitaxial (MBE) growth of both the 1T' and 2H phase monolayer WSe2 on bilayer graphene (BLG) substrate. The crystalline structures of these two phases were characterized using scanning tunneling microscopy. The monolayer 1T'-WSe2 was found to be metastable, and can transform into 2H phase under post-annealing procedure. The phase transition temperature of 1T'-WSe2 grown on BLG is lower than that of 1T' phase grown on 2H-WSe2 layers. This thermo-driven crystalline phase transition makes the monolayer WSe2 to be an ideal platform for the controlling of topological phase transitions in 2D materials family.

cond-mat.mtrl-sci↗