Lingxiang Bao | Searcharxiv

arXiv2026

G-type antiferromagnetic structure in Rb1-xV2Te2O

Altermagnetism, known for its non-relativistic spin-split band structures with yet compensated moments, is being intensively investigated. Discovering new altermagnetic materials with characteristics suitable for practical use remains an important ongoing task. Recently a metallic room-temperature altermagnet candidate Rb1-xV2Te2O with a layered structure and d-wave spin symmetry has been reported based on experimental results from the spin-resolved photoemission spectroscopy and scanning tunnelling microscopy/spectroscopy (STM/STS) measurements. Here we report neutron powder diffraction (NPD) investigations on the magnetic structure of Rb1-xV2Te2O, which shows a G-type antiferromagnetic structure below the transition temperature of 337 K. The result is different from the original theoretical expectation, which might lead to new insights on the physics of this altermagnet candidate.

cond-mat.mtrl-sci↗

arXiv2025

Orthorhombic nitride perovskite CeTaN3-δ with switchable and robust ferroelectric polarization

Perovskite-type ternary nitrides with predicted exciting ferroelectricity and many other outstanding properties hold great promise to be an emerging class of advanced ferroelectrics for manufacturing diverse technologically important devices. However, such nitride ferroelectrics have not yet been experimentally identified, mainly due to the challenging sample synthesis by traditional methods at ambient pressure. Here we report the successful high-pressure synthesis of a high-quality ferroelectric nitride perovskite of CeTaN3-δ with nitrogen deficiency, adopting an orthorhombic Pmn21 polar structure. This material is electrically insulating and exhibits switchable and robust electric polarization for producing ferroelectricity. Furthermore, a number of other extraordinary properties are also revealed in this nitride such as excellent mechanical properties and chemical inertness, which would make it practically useful for many device-relevant applications and fundamentally important for the study of condensed-matter physics.

cond-mat.mtrl-sci↗