arXiv subjects

Linh T. Dang

Publications and source records attributed to Linh T. Dang.

3 recordsLinked to original sources

arXiv2026

Fabrication of high-quality topological insulator nanodevices from bulk-insulating air-sensitive Sb-Bi$_2$Se$_3$

High-quality topological insulator (TI) materials are essential for the realization and detection of Majorana bound states (MBSs) in TI-superconductor hybrid platforms. Widely used compensated TIs exhibit substantial disorder and charge inhomogeneity, which may be detrimental for Majorana devices. In this regard, Sb-substituted Bi$_2$Se$_3$ (SBS) is promising, because it is non-compensated and yet achieves very low bulk carrier density. We systematically investigate the impact of thermal processing during microfabrication on the transport properties of SBS. We developed a room-temperature fabrication protocol that preserves the low carrier density of exfoliated SBS upon fabrication of Hall bar and nanowire devices as evidenced from the observation of quantum interference oscillations in nanowires, a large gate tunability, and clear signatures of weak antilocalization (WAL).

cond-mat.mes-hall↗

arXiv2023

Topological insulator spin transistor

When a charge current is injected into the surface state of a topological insulator (TI), the resulting shift of the spin-momentum-locked Fermi surface leads to the appearance of a net spin polarization. The helical spin structure of the Dirac-cone surface state of a TI should lead to a fixed sign of this spin polarization for a given current direction, but experimentally, both signs that agree and disagree with the theory expectation for the surface state Dirac cone have been observed in the past. Although the origin of the wrong sign has not been conclusively elucidated, this observation points to the possibility that one may switch the spin polarization at will to realize a spin transistor operation. Here we report the observation of both signs of spin polarization in the very same device and demonstrate the tunability between the two by electrostatic gating, which gives a proof of principle of a topological insulator spin transistor. This switching behaviour is explained using a minimal model of competing contributions from the topological surface state and trivial Rashba-split states.

cond-mat.mes-hall↗

arXiv2019

Enhanced thermoelectricity at the ultra-thin film limit

At the ultra-thin film limit, quantum confinement strongly improves thermoelectric figure of merit in materials such as Sb$_2$Te$_3$ and Bi$_2$Te$_3$. These high quality films have only been realized using well controlled techniques such as molecular beam epitaxy. We report a two fold increase in the Seebeck coefficient for both p-type Sb$_2$Te$_3$ and n-type Bi$_2$Te$_3$ using thermal co-evaporation, an affordable approach. At the thick film limit greater than 100 nm, their Seebeck coefficients are around 100 $μV/K$, similar to results obtained in other work. When the films are thinner than 50 nm, the Seebeck coefficient increases to about 500 $μV/K$. With a total Seebeck coefficient $\sim$ 1 mV/K and an estimate ZT $\sim$ 2, this pair of materials is the first step to a practical micro-cooler at room temperature.

cond-mat.mtrl-sci↗