arXiv subjects

Lixian Yan

Publications and source records attributed to Lixian Yan.

3 recordsLinked to original sources

arXiv2026

Heterogeneous Memory Design Exploration for AI Accelerators with a Gain Cell Memory Compiler

As memory increasingly dominates system cost and energy, heterogeneous on-chip memory systems that combine technologies with complementary characteristics are becoming essential. Gain Cell RAM (GCRAM) offers higher density, lower power, and tunable retention, expanding the design space beyond conventional SRAM. To this end, we create an OpenGCRAM compiler supporting both SRAM and GCRAM. It generates macro-level designs and layouts for commercial CMOS processes and characterizes area, delay, and power across user-defined configurations. The tool enables systematic identification of optimal heterogeneous memory configurations for AI tasks under specified performance metrics.

cs.AR↗

arXiv2025

OpenGCRAM: An Open-Source Gain Cell Compiler Enabling Design-Space Exploration for AI Workloads

Gain Cell memory (GCRAM) offers higher density and lower power than SRAM, making it a promising candidate for on-chip memory in domain-specific accelerators. To support workloads with varying traffic and lifetime metrics, GCRAM also offers high bandwidth, ultra low leakage power and a wide range of retention times, which can be adjusted through transistor design (like threshold voltage and channel material) and on-the-fly by changing the operating voltage. However, designing and optimizing GCRAM sub-systems can be time-consuming. In this paper, we present OpenGCRAM, an open-source GCRAM compiler capable of generating GCRAM bank circuit designs and DRC- and LVS-clean layouts for commercially available foundry CMOS, while also providing area, delay, and power simulations based on user-specified configurations (e.g., word size and number of words). OpenGCRAM enables fast, accurate, customizable, and optimized GCRAM block generation, reduces design time, ensure process compliance, and delivers performance-tailored memory blocks that meet diverse application requirements.

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arXiv2025

GainSight: A Unified Framework for Data Lifetime Profiling and Heterogeneous Memory Composition

As AI workloads drive increasing memory requirements, domain-specific accelerators need higher-density on-chip memory beyond what current SRAM scaling trends can provide. Simultaneously, the vast amounts of short-lived data in these workloads make SRAM overprovisioned in retention capability. To address this mismatch, we propose a wholesale shift from uniform SRAM arrays to heterogeneous on-chip memory, incorporating denser short-term RAM (StRAM) devices whose limited retention times align with transient data lifetimes. To facilitate this shift, we introduce GainSight, the first comprehensive, open-source framework that aligns dynamic, fine-grained workload lifetime profiles with memory device characteristics to enable generation of optimal StRAM memory compositions. GainSight combines retargetable profiling backends with an architecture-agnostic analytical frontend. The various backends capture cycle-accurate data lifetimes, while the frontend correlates workload patterns with StRAM retention properties to generate optimal memory compositions and project performance. GainSight elevates data lifetime to a first-class design consideration for next-generation AI accelerators, enabling systematic exploitation of data transience for improved on-chip memory density and efficiency. Applying GainSight to MLPerf Inference and PolyBench workloads reveals that 64.3% of first-level GPU cache accesses and 79.01% of systolic array scratchpad accesses exhibit sub-microsecond lifetimes suitable for high-density StRAM, with optimal heterogeneous on-chip memory compositions achieving up to 3x active energy and 4x area reductions compared to uniform SRAM hierarchies. To facilitate adoption and further research, GainSight is open-sourced at https://gainsight.stanford.edu/.

cs.AR↗