arXiv subjects

Liza Herrera Diez

Publications and source records attributed to Liza Herrera Diez.

10 recordsLinked to original sources

arXiv2024

Tuning of perpendicular magnetic anisotropy in Bi-substituted yttrium iron garnet films by He$^+$ ion irradiation

We report the continuous tuning of magnetic anisotropy in perpendicularly magnetized bismuth-substituted yttrium iron garnet (Bi-YIG) films via He$^+$ ion irradiation. Our findings indicate that the magnetization direction of epitaxial Bi-YIG films on sGGG substrates transitions from out-of-plane in the as-grown state to in-plane after He+ ion irradiation at a fluence exceeding $2\times 10^{14}$ ions/cm$^2$. The reorientation is attributed to the relaxation of tensile film strain, which reduces the perpendicular magnetic anisotropy without affecting the saturation magnetization. The Gilbert damping parameter and the inhomogeneous broadening of the ferromagnetic resonance linewidth show only minimal increases with ion irradiation. Additionally, at a fluence of $5\times 10^{13}$ ions/cm$^2$, we observe the formation of magnetic bubble domains in the Bi-YIG films. Micromagnetic simulations estimate a Dzyaloshinskii-Moriya interaction of 0.006 mJ/m$^2$, which is insufficient for stabilizing Néel-type skyrmions. Finally, we demonstrate that the effects of He$^+$ ion irradiation can be largely reversed through thermal annealing in an oxygen atmosphere.

cond-mat.mtrl-sci↗

arXiv2024

Control of the magnetic anisotropy in multi-repeat Pt/Co/Al heterostructures using magneto-ionic gating

Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in Ta/Pt/[Co/Al/Pt]$_n$/Co/Al/AlO$_\text{x}$ multilayer stacks comprising $n +1$ Co layers and its impact on the magnetic properties of the multilayers. We demonstrate that the perpendicular magnetic anisotropy can be reversibly quenched through gate-driven oxidation of the intermediary Al layer between Co and AlO$_\text{x}$, enabling dynamic control of the magnetic layers contributing to the out-of-plane remanence - varying between $n$ and $n +1$. For multilayer configurations with $n = 2$ and $n = 4$, we observe reversible and non-volatile additions of 1/3 and 1/5, respectively, to the anomalous Hall effect amplitude based on the applied gate voltage. Magnetic imaging reveals that the gate-induced spin-reorientation transition occurs through the propagation of a single 90$^{\circ}$ magnetic domain wall separating the perpendicular and in-plane anisotropy states. In the 5-repetition multilayer, the modification leads to a doubling of the period of the magnetic domains at remanence. These results demonstrate that the magneto-ionic control of the anisotropy of a single magnetic layer can be used to control the magnetic properties of coupled multilayer systems, extending beyond the gating effects on a single magnetic layer.

cond-mat.mtrl-sci↗

arXiv2024

Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.

cond-mat.mtrl-sci↗

arXiv2023

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.

cond-mat.mes-hall↗

arXiv2022

Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion

Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films.

cond-mat.mtrl-sci↗

arXiv2022

Ab-initio study of magneto-ionic mechanisms in ferromagnet/oxide multilayers

The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behaviour in $\text{Ta/CoFeB/}\text{HfO}_2$, we perform ab-initio simulations on various setups comprising $\text{Fe/O, Fe/HfO}_2$ interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetic anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in $\text{Ta/CoFeB/}\text{HfO}_2$.

cond-mat.mes-hall↗

arXiv2021

Ion irradiation and implantation modifications of magneto-ionically induced exchange bias in Gd/NiCoO

Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni$_{0.33}$Co$_{0.67}$O heterostructures. Irradiation using $He^+$ leads to an expansion of the Ni$_{0.33}$Co$_{0.67}$O lattice due to strain relaxation. At low He+ fluence ($\leq$ 2$\times$10$^{14}$ ions cm$^{-2}$), the redox-induced interfacial magnetic moment initially increases, owing to enhanced oxygen migration. At higher fluence, the exchange bias is suppressed due to reduction of pinned uncompensated interfacial Ni$_{0.33}$Co$_{0.67}$O spins. For oxygen implanted samples, an initial lattice expansion below a dose of 5$\times$10$^{15}$ cm$^{-2}$ is subsequently dominated at higher dose by a lattice contraction and phase segregation into NiO and CoO-rich phases, which in turn alters the exchange bias. These results highlight the possibility of ion irradiation and implantation as an effective means to tailor magneto-ionic effects.

cond-mat.mtrl-sci↗

arXiv2020

Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse

The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal activations assume binary values, can indeed approach state-of-the-art performance on vision tasks. In this work, we revisit one of these architectures where synapses are implemented in a differential fashion to reduce bit errors, and synaptic weights are read using precharge sense amplifiers. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip and on circuit simulation, we show that the same memory array architecture can be used to implement ternary weights instead of binary weights, and that this technique is particularly appropriate if the sense amplifier is operated in near-threshold regime. We also show based on neural network simulation on the CIFAR-10 image recognition task that going from binary to ternary neural networks significantly increases neural network performance. These results highlight that AI circuits function may sometimes be revisited when operated in low power regimes.

cs.ET↗

arXiv2019

Bloch-to-Néel domain wall transition evinced through morphology of magnetic bubble expansion in Ta/CoFeB/MgO layers

Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are often characterised by vanishing or modest values of interfacial Dzyaloshinskii-Moriya interaction (DMI), which results in purely Bloch or mixed Bloch-Néel domain walls (DWs). Here we investigate the creep evolution of the overall magnetic bubble morphology in these systems under the combined presence of in-plane and out-of-plane magnetic fields and we show that He$^+$ ion irradiation induces a transition of the internal DW structure towards a fully Néel spin texture. This transition can be correlated to a simultaneous increase in DMI strength and reduction in saturation magnetisation -- which are a direct consequence of the effects of ion irradiation on the bottom and top CoFeB interfaces, respectively. The threshold irradiation dose above which DWs acquire a pure Néel character is experimentally found to be between 12 $\times$ 10$^{18}$ He$^+$/m$^2$ and 16 $\times$ 10$^{18}$ He$^+$/m$^2$, matching estimations from the one dimensional DW model based on material parameters. Our results indicate that evaluating the global bubble shape during its expansion can be an effective tool to sense the internal bubble DW structure. Furthermore, we show that ion irradiation can be used to achieve post-growth engineering of a desired DW spin texture.

cond-mat.mtrl-sci↗

arXiv2018

Tuning spin torque nano-oscillator nonlinearity using He+ irradiation

We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As the STNO microwave signal properties are mainly governed by $\mathcal{N}$, we can in this way directly control the threshold current, the current tunability of the frequency, and the STNO linewidth. In particular, we can dramatically improve the latter by more than two orders of magnitude. Our results are in good agreement with the theory for nonlinear auto-oscillators, confirm theoretical predictions of the role of nonlinearity, and demonstrate a straightforward path towards improving the microwave properties of STNOs.

physics.app-ph↗