arXiv subjects

Lois Orosa

Publications and source records attributed to Lois Orosa.

27 records · Page 2Linked to original sources

arXiv2020

WoLFRaM: Enhancing Wear-Leveling and Fault Tolerance in Resistive Memories using Programmable Address Decoders

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes across the entire memory, and 2) fault tolerance, to correct memory cell failures. However, one of the main open challenges in extending the lifetime of existing resistive memories is to make both techniques work together seamlessly and efficiently. To address this challenge, we propose WoLFRaM, a new mechanism that combines both wear-leveling and fault tolerance techniques at low cost by using a programmable resistive address decoder (PRAD). The key idea of WoLFRaM is to use PRAD for implementing 1) a new efficient wear-leveling mechanism that remaps write accesses to random physical locations on the fly, and 2) a new efficient fault tolerance mechanism that recovers from faults by remapping failed memory blocks to available physical locations. Our evaluations show that, for a Phase Change Memory (PCM) based system with cell endurance of 108 writes, WoLFRaM increases the memory lifetime by 68% compared to a baseline that implements the best state-of-the-art wear-leveling and fault correction mechanisms. WoLFRaM's average / worst-case performance and energy overheads are 0.51% / 3.8% and 0.47% / 2.1% respectively.

cs.AR↗

arXiv2020

FlexWatts: A Power- and Workload-Aware Hybrid Power Delivery Network for Energy-Efficient Microprocessors

Modern client processors typically use one of three commonly-used power delivery network (PDN): 1) motherboard voltage regulators (MBVR), 2) integrated voltage regulators (IVR), and 3) low dropout voltage regulators (LDO). We observe that the energy-efficiency of each of these PDNs varies with the processor power (e.g., thermal design power (TDP) and dynamic power-state) and workload characteristics. This leads to energy inefficiency and performance loss, as modern client processors operate across a wide spectrum of power consumption and execute a wide variety of workloads. We propose FlexWatts, a hybrid adaptive PDN for modern client processors whose goal is to provide high energy-efficiency across the processor's wide range of power consumption and workloads by dynamically allocating PDNs to processor domains. FlexWatts is based on three key ideas. First, it combines IVRs and LDOs in a novel way to share multiple on-chip and off-chip resources. This hybrid PDN is allocated for processor domains with a wide power consumption range and it dynamically switches between two modes: IVR-Mode and LDO-Mode, depending on the power consumption. Second, for all other processor domains, FlexWatts statically allocates off-chip VRs. Third, FlexWatts introduces a prediction algorithm that switches the hybrid PDN to the mode that is the most beneficial. To evaluate the tradeoffs of PDNs, we develop and open-source PDNspot, the first validated architectural PDN model that enables quantitative analysis of PDN metrics. Using PDNspot, we evaluate FlexWatts on a wide variety of SPEC CPU2006, 3DMark06, and battery life workloads against IVR, the state-of-the-art PDN in modern client processors. For a 4W TDP processor, FlexWatts improves the average performance of the SPEC CPU2006 and 3DMark06 workloads by 22% and 25%, respectively. FlexWatts has comparable cost and area overhead to IVR.

cs.AR↗

arXiv2020

FIGARO: Improving System Performance via Fine-Grained In-DRAM Data Relocation and Caching

DRAM Main memory is a performance bottleneck for many applications due to the high access latency. In-DRAM caches work to mitigate this latency by augmenting regular-latency DRAM with small-but-fast regions of DRAM that serve as a cache for the data held in the regular-latency region of DRAM. While an effective in-DRAM cache can allow a large fraction of memory requests to be served from a fast DRAM region, the latency savings are often hindered by inefficient mechanisms for relocating copies of data into and out of the fast regions. Existing in-DRAM caches have two sources of inefficiency: (1) the data relocation granularity is an entire multi-kilobyte row of DRAM; and (2) because the relocation latency increases with the physical distance between the slow and fast regions, multiple fast regions are physically interleaved among slow regions to reduce the relocation latency, resulting in increased hardware area and manufacturing complexity. We propose a new substrate, FIGARO, that uses existing shared global buffers among subarrays within a DRAM bank to provide support for in-DRAM data relocation across subarrays at the granularity of a single cache block. FIGARO has a distance-independent latency within a DRAM bank, and avoids complex modifications to DRAM. Using FIGARO, we design a fine-grained in-DRAM cache called FIGCache. The key idea of FIGCache is to cache only small, frequently-accessed portions of different DRAM rows in a designated region of DRAM. By caching only the parts of each row that are expected to be accessed in the near future, we can pack more of the frequently-accessed data into FIGCache, and can benefit from additional row hits in DRAM. Our evaluations show that FIGCache improves the average performance of a system using DDR4 DRAM by 16.3% and reduces average DRAM energy consumption by 7.8% for 8-core workloads, over a conventional system without in-DRAM caching.

cs.AR↗

arXiv2020

Optically Connected Memory for Disaggregated Data Centers

Recent advances in integrated photonics enable the implementation of reconfigurable, high-bandwidth, and low energy-per-bit interconnects in next-generation data centers. We propose and evaluate an Optically Connected Memory (OCM) architecture that disaggregates the main memory from the computation nodes in data centers. OCM is based on micro-ring resonators (MRRs), and it does not require any modification to the DRAM memory modules. We calculate energy consumption from real photonic devices and integrate them into a system simulator to evaluate performance. Our results show that (1) OCM is capable of interconnecting four DDR4 memory channels to a computing node using two fibers with 1.07 pJ energy-per-bit consumption and (2) OCM performs up to 5.5x faster than a disaggregated memory with 40G PCIe NIC connectors to computing nodes.

cs.AR↗

arXiv2020

Revisiting RowHammer: An Experimental Analysis of Modern DRAM Devices and Mitigation Techniques

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM modules (60x DDR3, 110x DDR4, and 130x LPDDR4) with RowHammer protection mechanisms disabled, spanning multiple different technology nodes from across each of the three major DRAM manufacturers. Our studies definitively show that newer DRAM chips are more vulnerable to RowHammer: as device feature size reduces, the number of activations needed to induce a RowHammer bit flip also reduces, to as few as 9.6k (4.8k to two rows each) in the most vulnerable chip we tested. We evaluate five state-of-the-art RowHammer mitigation mechanisms using cycle-accurate simulation in the context of real data taken from our chips to study how the mitigation mechanisms scale with chip vulnerability. We find that existing mechanisms either are not scalable or suffer from prohibitively large performance overheads in projected future devices given our observed trends of RowHammer vulnerability. Thus, it is critical to research more effective solutions to RowHammer.

cs.AR↗

arXiv2020

CLR-DRAM: A Low-Cost DRAM Architecture Enabling Dynamic Capacity-Latency Trade-Off

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the performance of workloads that need large memory capacity. Because the capacity-latency trade-off is fixed at design time, previous works cannot achieve maximum performance under very different and dynamic workload demands. This paper proposes Capacity-Latency-Reconfigurable DRAM (CLR-DRAM), a new DRAM architecture that enables dynamic capacity-latency trade-off at low cost. CLR-DRAM allows dynamic reconfiguration of any DRAM row to switch between two operating modes: 1) max-capacity mode, where every DRAM cell operates individually to achieve approximately the same storage density as a density-optimized commodity DRAM chip and 2) high-performance mode, where two adjacent DRAM cells in a DRAM row and their sense amplifiers are coupled to operate as a single low-latency logical cell driven by a single logical sense amplifier. We implement CLR-DRAM by adding isolation transistors in each DRAM subarray. Our evaluations show that CLR-DRAM can improve system performance and DRAM energy consumption by 18.6% and 29.7% on average with four-core multiprogrammed workloads. We believe that CLR-DRAM opens new research directions for a system to adapt to the diverse and dynamically changing memory capacity and access latency demands of workloads.

cs.AR↗

arXiv2019

Dataplant: Enhancing System Security with Low-Cost In-DRAM Value Generation Primitives

DRAM manufacturers have been prioritizing memory capacity, yield, and bandwidth for years, while trying to keep the design complexity as simple as possible. DRAM chips do not carry out any computation or other important functions, such as security. Processors implement most of the existing security mechanisms that protect the system against security threats, because 1) executing security mechanisms usually require non-trivial computational capabilities (e.g., encryption), and 2) commodity DRAM chips are not designed to perform computations or tasks other than data storage. In this work, we advocate for DRAM as a key component for providing security mechanisms to the system. To this end, we propose Dataplant, a new class of low-cost, high-performance, and reliable security primitives that can be integrated in commodity DRAM chips with minimal changes. The main idea of Dataplant is to slightly modify the internal DRAM timing signals to expose the inherent process variation found in all DRAM chips for generating unpredictable but reproducible values (e.g., keys) within DRAM. We use Dataplant to build two new security mechanisms. First, a new Dataplant-based physical unclonable function (PUF) with non-destructive read-out, low evaluation latency, robust responses, resiliency to temperature changes, and data-independent responses. Second, a new cold boot attack prevention mechanism that automatically destroys all data within DRAM on every power cycle with zero run-time energy and latency overheads. Using a combination of detailed simulations and experiments with 136 real commodity DRAM chips, we show that our Dataplant-based PUF has 1.8x higher throughput than the best state-of-the-art DRAM PUFs. We also demonstrate that our Dataplant-based cold boot attack protection mechanism is 19.5x faster and consumes 2.54x less energy when compared to existing mechanisms.

cs.CR↗

arXiv2019

EDEN: Enabling Energy-Efficient, High-Performance Deep Neural Network Inference Using Approximate DRAM

The effectiveness of deep neural networks (DNN) in vision, speech, and language processing has prompted a tremendous demand for energy-efficient high-performance DNN inference systems. Due to the increasing memory intensity of most DNN workloads, main memory can dominate the system's energy consumption and stall time. One effective way to reduce the energy consumption and increase the performance of DNN inference systems is by using approximate memory, which operates with reduced supply voltage and reduced access latency parameters that violate standard specifications. Using approximate memory reduces reliability, leading to higher bit error rates. Fortunately, neural networks have an intrinsic capacity to tolerate increased bit errors. This can enable energy-efficient and high-performance neural network inference using approximate DRAM devices. Based on this observation, we propose EDEN, a general framework that reduces DNN energy consumption and DNN evaluation latency by using approximate DRAM devices, while strictly meeting a user-specified target DNN accuracy. EDEN relies on two key ideas: 1) retraining the DNN for a target approximate DRAM device to increase the DNN's error tolerance, and 2) efficient mapping of the error tolerance of each individual DNN data type to a corresponding approximate DRAM partition in a way that meets the user-specified DNN accuracy requirements. We evaluate EDEN on multi-core CPUs, GPUs, and DNN accelerators with error models obtained from real approximate DRAM devices. For a target accuracy within 1% of the original DNN, our results show that EDEN enables 1) an average DRAM energy reduction of 21%, 37%, 31%, and 32% in CPU, GPU, and two DNN accelerator architectures, respectively, across a variety of DNNs, and 2) an average (maximum) speedup of 8% (17%) and 2.7% (5.5%) in CPU and GPU architectures, respectively, when evaluating latency-bound DNNs.

cs.DC↗

arXiv2018

D-RaNGe: Using Commodity DRAM Devices to Generate True Random Numbers with Low Latency and High Throughput

We propose a new DRAM-based true random number generator (TRNG) that leverages DRAM cells as an entropy source. The key idea is to intentionally violate the DRAM access timing parameters and use the resulting errors as the source of randomness. Our technique specifically decreases the DRAM row activation latency (timing parameter tRCD) below manufacturer-recommended specifications, to induce read errors, or activation failures, that exhibit true random behavior. We then aggregate the resulting data from multiple cells to obtain a TRNG capable of providing a high throughput of random numbers at low latency. To demonstrate that our TRNG design is viable using commodity DRAM chips, we rigorously characterize the behavior of activation failures in 282 state-of-the-art LPDDR4 devices from three major DRAM manufacturers. We verify our observations using four additional DDR3 DRAM devices from the same manufacturers. Our results show that many cells in each device produce random data that remains robust over both time and temperature variation. We use our observations to develop D-RanGe, a methodology for extracting true random numbers from commodity DRAM devices with high throughput and low latency by deliberately violating the read access timing parameters. We evaluate the quality of our TRNG using the commonly-used NIST statistical test suite for randomness and find that D-RaNGe: 1) successfully passes each test, and 2) generates true random numbers with over two orders of magnitude higher throughput than the previous highest-throughput DRAM-based TRNG.

cs.AR↗