arXiv subjects

Lok-Kan Lai

Publications and source records attributed to Lok-Kan Lai.

3 recordsLinked to original sources

arXiv2026

Signatures of nodal superconductivity in stoichiometric FeTe

Superconductivity in stoichiometric FeTe opens access to the FeTe endpoint of the Fe(Se,Te) phase diagram, yet the nature of its superconducting pairing state remains unresolved. In this work, we combine scanning superconducting quantum interference device (SQUID) microscopy, electrical transport, scanning tunneling microscopy and spectroscopy (STM/S), and mean-field calculations to investigate the local superfluid response and pairing state of FeTe thin films with tunable stoichiometry. Even in stoichiometric FeTe, we observe micrometer-scale spatial variations in both superfluid stiffness and superconducting transition temperature $T_c$, while the London penetration depth remains non-saturating down to 0.02$T_c$ and follows a power-law temperature dependence with an exponent of approximately 1-1.5. Together with a V-shaped low-energy density of states and two-gap modeling, these results indicate a superconducting state with gap nodes or deep minima, consistent with either a $d$-wave or nodal $s$-wave superconducting state. Our findings establish stoichiometric FeTe as a distinct superconducting regime that departs from the trend toward more isotropic gaps at intermediate Se/Te compositions, providing a new benchmark for modern microscopic theories of iron-chalcogenide superconductivity. Our work also reveals a crossover from weak to rapid suppression of $T_c$ as superfluid stiffness decreases, connecting FeTe to the broader phenomenology observed in unconventional superconductors.

cond-mat.supr-con↗

arXiv2026

Interface-Confined Superconductivity with Thickness-Independent Superfluid Stiffness in (Pb,Sn)Te/FeTe Bilayers

Interface-induced superconductivity in FeTe-based heterostructures provides a promising route toward topological superconductivity, yet the roles of the neighboring layers topology, symmetry, and electronic structure remain unresolved. In this work, we employ molecular beam epitaxy to grow Pb1-xSnxTe/FeTe bilayers and use angle-resolved photoemission spectroscopy to track the evolution of the Pb1-xSnxTe layer from a trivial insulator to a topological crystalline insulator hosting multiple Dirac surface states. Electrical transport measurements reveal robust superconductivity throughout the entire composition range, with a nearly constant superconducting transition temperature of ~12 K despite substantial changes in the electronic structure and topology of Pb1-xSnxTe. Double-coil mutual-inductance measurements further reveal comparable superfluid stiffness across the topological phase transition and nearly thickness-independent superfluid stiffness despite large variations in the constituent-layer thicknesses, demonstrating that superconductivity is confined near the interface. These results establish that superconductivity in FeTe-based heterostructures is largely insensitive to the topology, crystal symmetry, and detailed electronic structure of the neighboring layer, supporting a primary origin in modifications to the FeTe layer. The coexistence of interface-confined superconductivity and tunable multiple Dirac surface states in Pb1-xSnxTe/FeTe bilayers provides a versatile platform for exploring topological superconductivity and interactions among multiple Majorana zero modes.

cond-mat.supr-con↗

arXiv2026

Surface-State-Driven Anomalous Hall Effect in Altermagnetic MnTe Films

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with controlled thickness on InP(111)A substrates. By performing angle-resolved photoemission spectroscopy measurements, we observe a large spin splitting of ~230 meV for bulk bands well below the Fermi level and identify surface states that cross the Fermi level. Electrical transport measurements reveal that a robust anomalous Hall (AH) effect persists down to 2 K and an AH sign reversal occurs near 175 K. By systematically tuning film thickness, growth conditions, and interfacial structure, we demonstrate that the AH response in MnTe films originates from the Berry curvature of surface states rather than from bulk bands. Our first-principles calculations reveal that this surface-state-driven AH effect is imprinted by the bulk altermagnetic order and remains unchanged for terminations with opposite Mn magnetic orientations. Our results establish a unique surface transport probe of bulk altermagnetism, demonstrate interface engineering as an effective route to generate and control the AH effect in altermagnets, and provide a unified understanding of the AH response in altermagentic MnTe films.

cond-mat.mtrl-sci↗