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Lokesh Siddhu

Publications and source records attributed to Lokesh Siddhu.

3 recordsLinked to original sources

Retention-Aware RISC-V ISA Extension and Memory Controller on FPGA for MLC NVM

Non-volatile memory (NVM) technologies, particularly Multi-Level Cell (MLC) NVMs, offer significant potential for increasing memory density. MLC NVMs provide a tradeoff between write latency and retention time, where faster writes/stores result in lower retention and slower writes yield higher retention. However, limited work has been done to validate and prototype NVM-based systems in hardware, leveraging this tradeoff at the system level. In this paper, we present a novel memory controller architecture and a RISC-V instruction set extension to optimize MLC NVM write operations by balancing speed and retention time. Our custom NVM controller, built around a finite state machine with an AXI memory-mapped interface, efficiently manages read/write operations with enhanced burst transfers, minimizing latency. Additionally, we introduce a fast-store instruction in RISC-V to increasing write performance while addressing retention limitations. Further, we design a dedicated AXI slave peripheral that supports bit-significance-aware writes: critical bits (e.g., MSBs) are written using slower, high-retention writes, while non-critical bits (e.g., LSBs) use faster, low-retention writes to help enhance performance without compromising data reliability. These enhancements are implemented in hardware on an FPGA platform. Experimental results show that our controller reduces hardware overhead by 30% compared to conventional designs, and the fast-store instruction improves performance by over 7% for streaming workloads with less than 0.08% hardware overhead. The bit-wise AXI peripheral has a LUT utilization staying below 3.5% even for 64x64 matrices, and under 1% for 32x32 sizes, making it viable for integration into larger SoCs.

cs.AR

Modeling and Simulating Emerging Memory Technologies: A Tutorial

Non-volatile Memory (NVM) technologies present a promising alternative to traditional volatile memories such as SRAM and DRAM. Due to the limited availability of real NVM devices, simulators play a crucial role in architectural exploration and hardware-software co-design. This tutorial presents a simulation toolchain through four detailed case studies, showcasing its applicability to various domains of system design, including hybrid main-memory and cache, compute-in-memory, and wear-leveling design. These case studies provide the reader with practical insights on customizing the toolchain for their specific research needs. The source code is open-sourced.

cs.AR

CoMeT: An Integrated Interval Thermal Simulation Toolchain for 2D, 2.5D, and 3D Processor-Memory Systems

Processing cores and the accompanying main memory working in tandem enable the modern processors. Dissipating heat produced from computation, memory access remains a significant problem for processors. Therefore, processor thermal management continues to be an active research topic. Most thermal management research takes place using simulations, given the challenges of measuring temperature in real processors. Since core and memory are fabricated on separate packages in most existing processors, with the memory having lower power densities, thermal management research in processors has primarily focused on the cores. Memory bandwidth limitations associated with 2D processors lead to high-density 2.5D and 3D packaging technology. 2.5D packaging places cores and memory on the same package. 3D packaging technology takes it further by stacking layers of memory on the top of cores themselves. Such packagings significantly increase the power density, making processors prone to heating. Therefore, mitigating thermal issues in high-density processors (packaged with stacked memory) becomes an even more pressing problem. However, given the lack of thermal modeling for memories in existing interval thermal simulation toolchains, they are unsuitable for studying thermal management for high-density processors. To address this issue, we present CoMeT, the first integrated Core and Memory interval Thermal simulation toolchain. CoMeT comprehensively supports thermal simulation of high- and low-density processors corresponding to four different core-memory configurations - off-chip DDR memory, off-chip 3D memory, 2.5D, and 3D. CoMeT supports several novel features that facilitate overlying system research. Compared to an equivalent state-of-the-art core-only toolchain, CoMeT adds only a ~5% simulation-time overhead. The source code of CoMeT has been made open for public use under the MIT license.

cs.AR