arXiv subjects

Long Ju

Publications and source records attributed to Long Ju.

28 records · Page 2Linked to original sources

arXiv2023

A well-balanced lattice Boltzmann model for binary fluids based on the incompressible phase-field theory

Spurious velocities arising from the imperfect offset of the undesired term at the discrete level are frequently observed in numerical simulations of equilibrium multiphase flow systems using the lattice Boltzmann equation (LBE) method. To capture the physical equilibrium state of two-phase fluid systems and eliminate spurious velocities, a well-balanced LBE model based on the incompressible phase-field theory is developed. In this model, the equilibrium distribution function for the Cahn-Hilliard (CH) equation is designed by treating the convection term as a source to avoid the introduction of undesired terms, enabling achievement of possible discrete force balance. Furthermore, this approach allows for the attainment of a divergence-free velocity field, effectively mitigating the impact of artificial compression effects and enhancing numerical stability. Numerical tests, including a flat interface problem, a stationary droplet, and the coalescence of two droplets, demonstrate the well-balanced properties and improvements in the stability of the present model.

physics.flu-dyn↗

arXiv2023

Conservation law and Lie symmetry analysis of the (1+1) dimensional dispersive long-wave equation

In this paper, we mainly study the integrability of 1+1 dimensional dispersive long-wave equation. Firstly, the Lie symmetry analysis of the equation is carried out in the first part. And the optimal system of the equation is obtained according to the symmetry, and the invariant solution and the reduced form of the target equation are solved according to the results. Secondly, we use different methods to solve the conservation law of the target equation. To begin with, we give the adjoint determination equation and adjoint symmetry of the 1+1 dimensional dispersive long-wave equation, and use the adjoint symmetry as the equation multiplier to find several conservation laws. Then we get a Lie bracket by using the relationship between the symmetry of the equation and the adjoint symmetry. Next its strict self-adjoint property is verified, and its conservation laws are solved by Ibragimov's method. Finally, the conservation laws of the target equation are solved by Noether's theorem. Thirdly we calculate some exact solutions of the target equation by three different methods. In the end of the paper, the Hamiltonian structure of the target equation, the generalized pre-symplectic that maps symmetries into adjoint-symmetries and some of its soliton solutions are calculated. In conclusion, we use the direct construction of conservation law method, Ibragimov's method and so on to solve some new conservation laws of 1+1 dimensional dispersive long-wave equation, use the relationship between symmetry and adjoint symmetry to construct the corresponding Lie brackets, and obtain some linear soliton solutions according to the conservation law of the equation.

math-ph↗

arXiv2023

Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunability by an electric field. Furthermore, its valley-dependent Berry phase at zero energy points to possible topological states when the pseudospin symmetry is broken by electron correlation. However, experimental explorations of these opportunities are very limited so far, due to a lack of devices with optimized layer numbers and configurations. Here we present electron transport measurements of hBN-encapsulated pentalayer graphene at down to 100 milli-Kelvin. We observed a correlated insulating state with >MOhm resistance at zero charge density and zero displacement field, where the tight-binding calculation predicts a metallic ground state. By increasing the displacement field, we observed a Chern insulator state with C = -5 and two other states with C = -3 at a low magnetic field of ~1 Tesla. At high displacement fields and charge densities, we observed isospin-polarized quarter- and half-metals. Therefore, rhombohedral-stacked pentalayer graphene is the first graphene system to exhibit two different types of Fermi-surface instabilities: driven by a pair of flat bands touching at zero energy, and by the Stoner mechanism in a single flat band. Our results demonstrate a new direction to explore intertwined electron correlation and topology phenomena in natural graphitic materials without the need of moiré superlattice engineering.

cond-mat.mes-hall↗

arXiv2023

Orbital Multiferroicity in Pentalayer Rhombohedral Graphene

Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-functional electrical and magnetic device applications. 2D materials with honeycomb lattices offer exciting opportunities to engineer unconventional multiferroicity, where the ferroic orders are driven purely by the orbital degrees of freedom but not electron spin. These include ferro-valleytricity corresponding to the electron valley and ferro-orbital-magnetism supported by quantum geometric effects. Such orbital multiferroics could offer strong valley-magnetic couplings and large responses to external fields-enabling device applications such as multiple-state memory elements, and electric control of valley and magnetic states. Here we report orbital multiferroicity in pentalayer rhombohedral graphene using low temperature magneto-transport measurements. We observed anomalous Hall signals Rxy with an exceptionally large Hall angle (tanΘH > 0.6) and orbital magnetic hysteresis at hole doping. There are four such states with different valley polarizations and orbital magnetizations, forming a valley-magnetic quartet. By sweeping the gate electric field E we observed a butterfly-shaped hysteresis of Rxy connecting the quartet. This hysteresis indicates a ferro-valleytronic order that couples to the composite field E\cdot B, but not the individual fields. Tuning E would switch each ferroic order independently, and achieve non-volatile switching of them together. Our observations demonstrate a new type of multiferroics and point to electrically tunable ultra-low power valleytronic and magnetic devices.

cond-mat.mes-hall↗

arXiv2022

Spectroscopy Signatures of Electron Correlations in a Trilayer Graphene/hBN Moiré Superlattice

ABC-stacked trilayer graphene/hBN moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. We report spectroscopy measurements of dual-gated TLG/hBN using Fourier transformed infrared photocurrent spectroscopy. We observed a strong optical transition between moiré mini-bands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 meV, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.

cond-mat.str-el↗

arXiv2021

Weyl Fermion Magneto-Electrodynamics and Ultra-low Field Quantum Limit in TaAs

Topological semimetals are predicted to exhibit unconventional electrodynamics, but a central experimental challenge is singling out the contributions from the topological bands. TaAs is the prototypical example, where 24 Weyl points and 8 trivial Fermi surfaces make the interpretation of any experiment in terms of band topology ambiguous. We report magneto-infrared reflection spectroscopy measurements on TaAs. We observed sharp inter-Landau level transitions from a single pocket of Weyl Fermions in magnetic fields as low as 0.4 tesla. We determine the W2 Weyl point to be 8.3 meV below the Fermi energy, corresponding to a quantum limit - the field required to reach the lowest LL - of 0.8 Tesla - unprecedentedly low for Weyl Fermions. LL spectroscopy allows us to isolate these Weyl Fermions from all other carriers in TaAs and our result provides a new way for directly exploring the more exotic quantum phenomena in Weyl semimetals, such as the chiral anomaly.

cond-mat.str-el↗

arXiv2021

Accurate Measurement of the Gap of Graphene/hBN Moiré Superlattice through Photocurrent Spectroscopy

Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gap at the charge neutrality point (CNP). This gap has previously been extensively studied by electrical transport through thermal activation measurements. Here, we report the determination of the gap size at the CNP of graphene/hBN superlattice through photocurrent spectroscopy study. We demonstrate two distinct measurement approaches to extract the gap size. A maximum of ~ 14 meV gap is observed for devices with a twist angle of less than 1 degree. This value is significantly smaller than that obtained from thermal activation measurements, yet larger than the theoretically predicted single-particle gap. Our results suggest that lattice relaxation and moderate electron-electron interaction effects may enhance the CNP gap in hBN/graphene superlattice.

cond-mat.mes-hall↗

arXiv2016

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride (BN) heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path towards on-demand graphene pn junctions and ultra-thin memory devices.

cond-mat.mes-hall↗

arXiv2014

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a history of imaging the electronic structure of individual point defects in conductors, semiconductors, and ultrathin films, but single-defect electronic characterization at the nanometer-scale remains an elusive goal for intrinsic bulk insulators. Here we report the characterization and manipulation of individual native defects in an intrinsic bulk hexagonal boron nitride (BN) insulator via STM. Normally, this would be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by employing a graphene/BN heterostructure, which exploits graphene's atomically thin nature to allow visualization of defect phenomena in the underlying bulk BN. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunneling spectroscopy (STS), we obtain charge and energy-level information for these BN defect structures. In addition to characterizing such defects, we find that it is also possible to manipulate them through voltage pulses applied to our STM tip.

cond-mat.mes-hall↗

arXiv2014

Gate-dependent Pseudospin Mixing in Graphene/Boron Nitride Moire Superlattices

Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum Hall effect2, 3, and Klein tunneling4, 5 in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sub-lattices at atomic level. Graphene/boron nitride (graphene/BN) Moire superlattice, where a fast sub-lattice oscillation due to B-N atoms is superimposed on the slow Moire period, provides an attractive approach to engineer the electron pseudospin in graphene13-18. This unusual Moire superlattice leads to a spinor potential with unusual hybridization of electron pseudospins, which can be probed directly through infrared spectroscopy because optical transitions are very sensitive to excited state wavefunctions. Here, we perform micro-infrared spectroscopy on graphene/BN heterostructure and demonstrate that the Moire superlattice potential is dominated by a pseudospin-mixing component analogous to a spatially varying pseudomagnetic field. In addition, we show that the spinor potential depends sensitively on the gate-induced carrier concentration in graphene, indicating a strong renormalization of the spinor potential from electron-electron interactions. Our study offers deeper understanding of graphene pseudospin structure under spinor Moire potential, as well as exciting opportunities to control pseudospin in two-dimensional heterostructures for novel electronic and photonic nanodevices.

cond-mat.mes-hall↗