arXiv subjects

Longju Yu

Publications and source records attributed to Longju Yu.

7 recordsLinked to original sources

arXiv2025

Spin Orientation Driven Polarization in Collinear Magnets

In a collinear magnet, the predominant magnetic moments are collectively aligned along a specific spatial orientation, and this alignment may yield intriguing phenomena such as spin orientation driven polarization. It is well known that spin orientation driven polarization is a relativistic effect that widely occurs in various type-II multiferroics. However, a universal theory that describes such a phenomenon and directs the corresponding materials discovery is lacking. Here, we revisit the magnetic structures of collinear magnets and explore the spin-orientation-dependent phenomena therein. Based on symmetry principles, we analyze the spin point groups (SPGs) that are associated with collinear magnets in the non-relativistic regime, demonstrate how relativistic spin-orbit interaction reduces each SPG to various magnetic point groups that are associated with different magnetic alignments, and classify the SPGs with respect to spin orientation driven polarization. We employ our theory to elucidate the mechanisms of spin orientation driven polarization in a variety of type-II multiferroics. Combined with first-principles simulations, we further show that polarization may be driven in nonpolar collinear antiferromagnets (e.g., CuFeS$_2$) by reorienting their magnetic alignments. Our theory provides guidelines for designing and discovering materials with spin orientation driven polarization, which will benefit the development of spintronics based on type-II multiferroics and related materials.

cond-mat.mtrl-sci↗

arXiv2025

Zeeman-type spin splittings in strained d-wave altermagnets

Recently, altermagnetic materials have become rather attractive because such materials showcase combined advantages of ferromagnets (e.g., spin current) and antiferromagnets (e.g., low stray field and ultrafast spin dynamics). Symmetry arguments imply that $d$-wave altermagnets may host strain-induced nonrelativistic Zeeman-type spin splittings (ZSSs), and a theoretical, numerical, and experimental justification of such phenomena are of high necessity. In the present work, we work with collinear spin point groups (SPGs) and use symmetry analysis to identify 15 SPGs that host strain-induced nonrelativistic ZSSs. These 15 SPGs coincide with the cases associated with $d$-wave alternating spin splittings reported in literature. We further corroborate our analysis by first-principles numerical simulations, which indicate that a shear strain of $2\%$ creates sizable nonrelativistic ZSSs of up to 177, 100, and 102 meV in CoF$_2$, LiFe$_2$F$_6$ and La$_2$O$_3$Mn$_2$Se$_2$ $d$-wave altermagnetic semiconductors, respectively. Our work suggests an alternative route toward creating spin current in altermagnets, which may be used to design altermagnetic-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Electrically switchable non-relativistic Zeeman spin splittings in collinear antiferromagnets

Magnetic or electrical manipulation of electronic spin is elementary for spin-based logic, computing, and memory, where the latter is a low-power manipulation scheme. Rashba-like spin splittings stemming from spin-orbit interaction (SOI) enable electric-field manipulation of spin, but the relativistic SOI causes spin relaxations and yields dissipative transport of spin-encoded information. Recent works suggest the occurrence of electric-field switchable non-relativistic Zeeman spin splittings (NRZSSs) in collinear antiferromagnets -- allowing for electrical manipulation of spin in the non-relativistic regime; yet, a theory elucidating the mechanisms for these NRZSSs and guiding the materials discovery remains missing. Here, we develop such a theory by analyzing the symmetries of spin point groups. We highlight the linear magnetoelectric and bilinear piezomagnetoelectric mechanisms for NRZSSs that depend linearly on electric field and are electrically switchable. First-principles calculations further confirm that FeOOH and NaMnP showcase such NRZSSs. Our theory provides guidelines for discovering light-element collinear antiferromagnets with electrically switchable NRZSSs, which are promising for the design of high-performance spin-based devices.

cond-mat.mtrl-sci↗

arXiv2024

Anomalous Hall effect from nonlinear magnetoelectric coupling

The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well known that AHE spontaneously occurs in ferromagnets or antiferromagnets with magnetization. While recent studies reveal electric-field induced AHE (via linear magnetoelectric coupling), an AHE originating from {\it nonlinear} magnetoelectric coupling remains largely unexplored. Here, by symmetry analysis, we establish the phenomenological theory regarding the spontaneous and electric-field driven AHE in magnets. We show that a large variety of magnetic point groups host an AHE that is driven by uni-axial, bi-axial, or tri-axial electric field and that comes from nonlinear magnetoelectric coupling. Such electric-field driven anomalous Hall conductivities are reversible by reversing the magnetic orders. Furthermore, our first-principles calculations suggest Cr$_2$O$_3$ and CoF$_2$ as candidates hosting the aforementioned AHE. Our work emphasizes the important role of nonlinear magnetoelectric coupling in creating exotic transport phenomena, and offers alternative avenues for the probe of magnetic orders.

cond-mat.mtrl-sci↗

arXiv2023

Engineering ferroelectricity in monoclinic hafnia

Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires the stabilization of thermodynamically-metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO$_2$-based ferroelectrics by designing a series of epitaxial (HfO$_2$)$_1$/(CeO$_2$)$_1$ superlattices. The advantages of the designated ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO$_2$. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization $>$25 $\mu$C/cm$^2$ and an ultralow polarization-switching energy barrier at $\sim$2.5 meV/atom. Our work may open an entirely new route towards the fabrication of high-performance HfO$_2$ based ferroelectric devices.

cond-mat.mtrl-sci↗

arXiv2023

Highly spin-polarized carriers and strong ferromagnetism in doped perovskite antiferromagnetic semiconductors

In semiconductor spintronics, the generation of highly spin-polarized carriers and the efficient probe of spin order (due to strong ferromagnetism) -- at or above room temperature -- are crucial because it allows for the design of spin-based semiconductor devices. Usually, such goals were fulfilled in room-temperature ferromagnetic semiconductors, being rare materials in nature. While room-temperature antiferromagnetic semiconductors are plentiful, the possibility for creating highly spin-polarized carriers and strong ferromagnetism in these materials remain to be unraveled. Here, we explore such a possibility by first-principles simulations, working with CaTcO$_3$ and NaOsO$_3$ perovskites -- being room-temperature antiferromagnetic semiconductors. We find that doping them by electrons or holes results in these materials to be highly spin-polarized, carrying enormous ferromagnetic moments. Doping electrons with moderate carrier density can yield strong ferromagnetism in them, with the ferromagnetic moments being comparable to that in typical ferromagnetic semiconductors. Our work thus indicates the merit of perovskite antiferromagnetic semiconductors in spintronics -- for a possible replacement of ferromagnetic semiconductors.

cond-mat.mtrl-sci↗

arXiv2023

The anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles in hafnia

The anti-symmetric and anisotropic symmetric exchange interactions between two magnetic dipole moments - responsible for intriguing magnetic textures (e.g., magnetic skyrmions) - have been discovered since last century, while their electric analogues were either hidden for a long time or still not known. As a matter of fact, it is only recently that the anti-symmetric exchange interactions between electric dipoles was proved to exist (with materials hosting such an interaction being still rare) and the existence of anisotropic symmetric exchange interaction between electric dipoles remains to be revealed. Here, by symmetry analysis and first-principles calculations, we identify a candidate material in which our aforementioned exchange interactions between electric dipoles are perceptible. More precisely, we find that various phases of hafnia showcase non-collinear alignment of electric dipoles, which is interpreted by our phenomenological theories. This gives evidence that hafnia simultaneously accommodates anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles. Our findings can hopefully deepen the current knowledge of electromagnetism in ferroelectrics, magnets and multiferroics, and have a potential to guide the discovery of novel states of matter (e.g., electric skyrmions) in hafnia and related materials.

cond-mat.mtrl-sci↗