arXiv subjects

Longjun Xiang

Publications and source records attributed to Longjun Xiang.

23 records · Page 2Linked to original sources

arXiv2023

Classification of spin Hall effect in two-dimensional systems

Physical properties such as the conductivity are usually classified according to the symmetry of the underlying system using Neumann's principle, which gives an upper bound for the number of independent components of the corresponding property tensor. However, for a given Hamiltonian, this global approach usually can not give a definite answer on whether a physical effect such as spin Hall effect (SHE) exists or not. It is found that the parity and types of spin-orbit interactions (SOIs) are good indicators that can further reduce the number of independent components of the spin Hall conductivity for a specific system. In terms of the parity as well as various Rashba-like and Dresselhaus-like SOIs, we propose a local approach to classify SHE in two-dimensional (2D) two-band models, where sufficient conditions for identifying the existence or absence of SHE in all 2D magnetic point groups are presented.

cond-mat.mes-hall↗

arXiv2023

Third-order intrinsic anomalous Hall effect with generalized semiclassical theory

The linear intrinsic anomalous Hall effect (IAHE) and second-order IAHE have been intensively investigated in time-reversal broken systems. However, as one of the important members of the nonlinear Hall family, the investigation of third-order IAHE remains absent due to the lack of an appropriate theoretical approach, although the third-order extrinsic AHE has been studied within the framework of first- and second-order semiclassical theory. Herein, we generalize the semiclassical theory for Bloch electrons under the uniform electric field up to the third-order using wavepacket method and based on which we predict that the third-order IAHE can also occur in time-reversal broken systems. Same as the second-order IAHE, we find the band geometric quantity, the second-order field-dependent Berry curvature arising from the second-order field-induced positional shift, plays a pivotal role to observe this effect. Moreover, with symmetry analysis, we find that the third-order IAHE, as the leading contribution, is supported by 15 time-reversal broken 3D magnetic point groups (MPGs), corresponding to a wide class of antiferromagnetic (AFM) materials. Guided by the symmetry arguments, a two-band model is chosen to demonstrate the generalized theory. Furthermore, the generalized third-order semiclassical theory depends only on the properties of Bloch bands, implying that it can also be employed to explore the IAHE in realistic AFM materials, by combining with first-principles calculations.

cond-mat.mes-hall↗

arXiv2023

Quantum Fluctuation of the Quantum Geometric Tensor and its Manifestation as Intrinsic Hall Signatures in Time-Reversal Invariant Systems

In time-reversal invariant systems, all charge Hall effects predicted so far are extrinsic effects due to the dependence on the relaxation time. We explore intrinsic Hall signatures by studying quantum noise spectrum of the Hall current in time-reversal invariant systems, and discover intrinsic thermal Hall noises in both linear and nonlinear regimes. As the band geometric characteristics, quantum geometric tensor and Berry curvature play critical roles in various Hall effects, so are their quantum fluctuations. It is found that the thermal Hall noise in linear order of the electric field is purely intrinsic, and the second-order thermal Hall noise has both intrinsic and extrinsic contributions. In particular, the intrinsic part of the second-order thermal Hall noise is a manifestation of the quantum fluctuation of quantum geometric tensor, which widely exists as long as Berry curvature is nonzero. These intrinsic thermal Hall noises provide direct measurable means to band geometric information, including Berry curvature related quantities and quantum fluctuation of quantum geometric tensor.

cond-mat.mes-hall↗

arXiv2022

Quantum third-order nonlinear Hall effect of a four-terminal device with time-reversal symmetry

The third-order nonlinear Hall effect induced by Berry-connection polarizability tensor has been observed in Weyl semimetals T$_d$-MoTe$_2$ as well as T$_d$-TaIrTe$_4$. The experiments were performed on bulk samples, and the results were interpreted with the semiclassical Boltzmann approach. Beyond the bulk limit, we develop a quantum nonlinear transport theory to investigate the third-order Hall response of a four-terminal setup with time-reversal symmetry in quantum regime. The quantum nonlinear theory is verified on a model system of monolayer MoTe$_2$, and numerical results on the angle-resolved Hall currents are qualitatively consistent with the experiment. More importantly, quantum signatures of the third-order Hall effect are revealed, which are independent of the system symmetry. The first quantum signature is quantum enhancement of the third-order Hall current, which is characterized by sharp current peaks whose magnitudes are three orders larger than the first-order Hall current. Such quantum enhancement originates from quantum interference in coherent transport, and it can be easily destroyed by dephasing effect. The second quantum signature is disorder-induced enhancement of the third-order Hall current for weak disorders. Our findings reveal quantum characteristics of the third-order Hall effect, and we propose feasible ways to enhance it in nanoscale systems. The quantum third-order theory developed in this work provides a general formalism for describing nonlinear coherent transport properties in multi-terminal devices, regardless of the system symmetry.

cond-mat.mes-hall↗

arXiv2019

Tunable Giant Rashba-type Spin Splitting in PtSe$_2$/MoSe$_2$ Heterostructure

We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe$_2$/MoSe$_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 Å$^{-1}$ around $\mathrmΓ$ point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe$_2$ and MoSe$_2$. Moreover, we find that the band dispersion close to valence band maximum around $Γ$ point can be well approximated by the generalized Rashba Hamiltonian $H(k_{||})=-\frac{\hbar^2 k_{||}^2}{2m}+c k_{||}+α_R \vecσ\cdot(\vec{k}_{||} \times \vec{z})$. It is found that the generalized Rashba constant $η_R=c+α_R$ in PtSe$_2$/MoSe$_2$ is as large as 1.3 eV$\cdot\textÅ$, and importantly $η_R$ can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor. In addition, with the spin-valley physics at $\mathrm{K}/\mathrm{K}'$ points in monolayer MoSe$_2$, we propose a promising model for spin field-effect transistor with opto-valleytronic spin injection based on PtSe$_2$/MoSe$_2$ heterostructure.

cond-mat.mtrl-sci↗