arXiv subjects

Longqing Chen

Publications and source records attributed to Longqing Chen.

5 recordsLinked to original sources

arXiv2026

Dzyaloshinskii-Moriya Gradients Unlock Topological Dimensional Reduction in Magnetic Hopfions

Three-dimensional magnetic solitons retain topological protection only while their spin field remains continuous. Here we show that chemical inhomogeneity can break this protection in a controlled way, converting a hopfion-like toroidal texture into an effectively two-dimensional skyrmion string. Tilt-dependent Lorentz transmission electron microscopy, electron energy-loss spectroscopy, and micromagnetic simulations of pristine, uniformly Y-doped, and nonuniformly Y-doped disordered TiO2 nanoparticles embedded in a FeCrNiMn host reveal two regimes. Uniform Y doping enriches Ti3+/oxygen-vacancy localization centers and stabilizes closed rings with Hopf invariant QH approximately 1. Nonuniform Y doping forms a Ti4+-rich, vacancy-depleted boundary that creates a sharp q=D/(2A) gradient and a weak-moment leakage channel. This coupled mismatch torque and continuity leakage split the ring, leaving a skyrmion-string remnant and a field-sensitive helicity texture.

cond-mat.other↗

arXiv2025

Direct imaging of quantum interference and Non-Abelian entanglement in Hopfion: an magnetic soliton possess loop-like anyonic properties

This work provides the first experimental elucidation of quantum topological effects in individual hopfions, establishing their potential as building blocks for three-dimensional topological quantum spintronics. The observed Non-Abelian characteristics suggest pathways toward fault-tolerant quantum operations through controlled hopfion braiding in engineered magnetic metamaterials.

cond-mat.mes-hall↗

arXiv2023

Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials

The investigation of chemical reactions during the ion irradiation is a frontier for the study of the ion-material interaction. In order to derive the contribution of bond formation to chemistry of ion produced nanoclusters, the valence electron energy loss spectroscopy (VEELS) was exploited to investigate the Ga$^+$ ion damage in Al$_2$O$_3$, InP and InGaAs, where each target material has been shown to yield different process for altering the clustering of recoil atoms: metallic Ga, metallic In and InGaP clusters in Al$_2$O$_3$, InP and InGaAs respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonianindicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rate and preferential bond formation.

cond-mat.mtrl-sci↗

arXiv2019

Atomic Imaging of Mechanically Induced Topological Transition of Ferroelectric Vortices

Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress. We reveal the detailed transition process at the atomic scale and reproduce this numerically using phase-field simulations. These findings provide new pathways to control the exotic topological ferroelectric structures for future nanoelectronics and also valuable insights into understanding of lattice-charge interactions at nanoscale.

cond-mat.mtrl-sci↗

arXiv2017

Nanoscale Bandgap Tuning across an Inhomogeneous Ferroelectric Interface

We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the photocurrent were explore to illustrate the reversible bandgap variation (~0.3eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandgap variation in ferroelectric perovskite oxides. This reversible bandgap tuning in complex oxides demonstrates a framework for the understanding of the opticallyrelated behaviors (photovoltaic, photoemission, and photocatalyst effects) affected by order parameters such as charge, orbital, and lattice parameters.

cond-mat.mes-hall↗