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Lorenzo Calvo-Barrio

Publications and source records attributed to Lorenzo Calvo-Barrio.

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Molecular ink-based synthesis of Bi(SzSe1-z)(IxBr1-x) solid solutions as tuneable materials for sustainable energy applications

Quasi-one-dimensional (Q-1D) van der Waals chalcohalides have emerged as promising materials for advanced energy applications, combining tunable optoelectronic properties and composed by earth-abundant and non-toxic elements. However, their widespread application remains hindered by challenges such as anisotropic crystal growth, composition control and lack of knowledge on optoelectronic properties. A deeper understanding of the intrinsic limitations of these materials, as well as viable defect mitigation strategies like the engineering of solid solutions, is critical. This work presents a low-temperature synthesis route based on molecular ink deposition enabling direct crystallization of tunable Bi(SzSe1-z)(IxBr1-x) solid solutions without need for binary chalcogenide precursors. This approach yields phase-pure films with precise control over morphology, composition, and crystallographic orientation. XRD analysis and DFT calculations confirm the formation of homogeneous solid solutions, while optoelectronic measurements reveal the distinct roles of halogen and chalcogen anions in tuning bandgap energy and carrier type, with Se shifting downwards the conduction band. The versatility of this synthesis technique enables morphology control ranging from compact films to rod-shaped microcrystals, expanding the functional adaptability of these materials. These findings offer a foundational framework for defect engineering and the scalable integration of chalcohalides in next-generation energy technologies, including photovoltaics, photocatalysis, thermoelectrics, and chemical sensing.

cond-mat.mtrl-sci

Ultraviolet interband plasmonics down to the vacuum UV with ultrathin amorphous silicon nanostructures

Silicon dominates electronics, optoelectronics, photovoltaics and photonics thanks to its suitable properties, abundance, and well-developed cost-effective manufacturing processes. Recently, crystalline silicon has been demonstrated to be an appealing alternative plasmonic material, both for the infrared where free-carrier plasmons are enabled by heavy doping, and for the ultraviolet where plasmonic effects are induced by interband transitions. Herein, we demonstrate that nanostructured amorphous silicon exhibits such so-called interband plasmonic properties in the ultraviolet, as opposed to the expectation that they would only arise in crystalline materials. We report optical plasmon resonances in the 100-to-300 nm wavelength range in ultrathin nanostructures. These resonances shift spectrally with the nanostructure shape and the nature of the surrounding matrix, while their field enhancement properties turn from epsilon-near-zero plasmonic to surface plasmonic. We present a vacuum ultraviolet wavelength- and polarization-selective ultrathin film absorber design based on deeply-subwavelength anisotropically-shaped nanostructures. These findings reveal amorphous silicon as a promising material platform for ultracompact and room-temperature-processed ultraviolet plasmonic devices operating down to vacuum ultraviolet wavelengths, for applications including anticounterfeiting, data encryption and storage, sensing and detection. Furthermore, these findings raise a fundamental question on how plasmonics can be based on amorphous nanostructures.

physics.optics