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Lorenzo Fallarino

Publications and source records attributed to Lorenzo Fallarino.

3 recordsLinked to original sources

Antiferromagnetic Domain Wall Control via the Surface Spin Flop in Fully Tunable Synthetic Antiferromagnets with Perpendicular Magnetic Anisotropy

Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz frequency regime. Here we introduce an approach to nucleate and stabilize an AF domain wall in a synthetic antiferromagnet (SAF). We present experimental and micromagnetic studies of the magnetization reversal in [(Co/Pt)$_{X-1}$/Co/Ir]$_{N-1}$(Co/Pt)$_X$ SAFs, where interface induced perpendicular magnetic anisotropy (PMA) and AF interlayer exchange coupling (IEC) are completely controlled via the individual layer thicknesses within the multilayer stack. By combining strong PMA with even stronger AF IEC, the SAF reveals a collective response to an external magnetic field applied normal to the surface, and we stabilize the characteristic surface spin flop (SSF) state for an even number N of AF-coupled (Co/Pt)$_{X-1}$/Co multilayer blocks. In the SSF state our system provides a well-controlled and fully tunable vertical AF domain wall, easy to integrate as no single crystal substrates are required and with uniform 2D-magnetization in the film plane for further functionalization options, such as for example lateral patterning via lithography.

cond-mat.mtrl-sci

Weak de-localization in graphene on a ferromagnetic insulating film

Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, we study in detail the interplay between the magnetoresistance of graphene and the magnetization of an underlying ferromagnetic insulating film. A clear correlation between both magnitudes is observed but we find, through a careful modelling of the magnetization and the weak localization measurements, that such correspondence can be explained by the effects of the magnetic stray fields arising from the ferromagnetic insulator. Our results emphasize the complexity arising at the interface between magnetic and two-dimensional materials.

cond-mat.mes-hall

Spin transport enhancement by controlling the Ag growth in lateral spin valves

The role of the growth conditions in the spin transport properties of silver (Ag) have been studied by using lateral spin valve structures. By changing the deposition conditions of Ag from polycrystalline to epitaxial growth, we have observed a considerable enhancement of the spin diffusion length, from $λ_{Ag}$ = 449 $\pm$ 30 to 823 $\pm$ 59 nm. This study shows that diminishing the grain boundary contribution to the spin relaxation mechanism is an effective way to improve the spin diffusion length in metallic nanostructures.

cond-mat.mes-hall