arXiv subjects

Lorenzo Pavesi

Publications and source records attributed to Lorenzo Pavesi.

61 records · Page 4Linked to original sources

arXiv2011

Monolithic whispering-gallery mode resonators with vertically coupled integrated bus waveguides

We report on the realization and optical characterization of a CMOS-compatible silicon-based microresonator/waveguide coupled system, fully integrated on a silicon chip. The device uses a vertical coupling scheme between the resonator and a buried strip waveguide. We demonstrate that its high optical quality follows from the accurate planarization of the waveguide topography. More importantly, we demonstrate a wafer-scale mass fabrication of freestanding planar resonators suspended in air and coupled to the integrated bus waveguides. A nanometer control of the coupling distances allows for a precise and selective excitation of different mode families of the resonator. This opens the door for the realization of stable all-integrated complex resonator systems for optomechanical and metrological applications, with the potential to substitute the nowadays intensive use of complicated fiber-taper coupling schemes.

physics.optics↗

arXiv2009

Whispering-gallery mode micro-kylix resonators

Owing to their ability to confine electromagnetic energy in ultrasmall dielectric volumes, micro-disk, ring and toroid resonators hold interest for both specific applications and fundamental investigations. Generally, contributions from various loss channels within these devices lead to limited spectral windows (Q-bands) where highest mode Q-factors manifest. Here we describe a strategy for tuning Q-bands using a new class of micro-resonators, named micro-kylix resonators, in which engineered stress within an initially flat disk results in either concave or convex devices. To shift the Q-band by 60nm towards short wavelengths in flat micro-disks a 50% diameter reduction is required, which causes severe radiative losses suppressing Q's. With a micro-kylix, we achieve similar tuning and even higher Q's by two orders of magnitude smaller diameter modification (0.4%). The phenomenon relies on geometry-induced smart interplay between modified dispersions of material absorption and radiative loss-related Q-factors. Micro-kylix devices can provide new functionalities and novel technological solutions for photonics and micro-resonator physics.

physics.optics↗

arXiv2008

Whispering-gallery modes and light emission from a Si-nanocrystal-based single microdisk resonator

We report on visible light emission from Si-nanocrystal based optically active microdisk resonators. The room temperature photoluminescence (PL) from single microdisks shows the characteristic modal structure of whispering-gallery modes. The emission is both TE and TM-polarized in 300 nm thick microdisks, while thinner ones (135 nm) support only TE-like modes. Thinner disks have the advantage to filter out higher order radial mode families, allowing for measuring only the most intense first order modal structure. We reveal subnanometer linewidths and corresponding quality factors as high as 2800, limited by the spectral resolution of the experimental setup. Moreover,we observe a modification of mode linewidth by a factor 13 as a function of pump power. The origin of this effect is attributed to an excited carrier absorption loss mechanism.

physics.optics↗

arXiv2005

Photon energy lifter

We propose a time-dependent photonic structure, in which the carrier frequency of an optical pulse is shifted without changing its shape. The efficiency of the device takes advantage of slow group velocities of light attainable in periodic photonic structures. The frequency shifting effect is quantitatively studied by means of Finite Difference Time Domain simulations for realistic systems with optical parameters of conventional silicon technology.

cond-mat.other↗

arXiv2003

Opposite effects of NO$_2$ on electrical injection in porous silicon gas sensors

The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low -- of the order of few \micro\meter{} -- the injection decreases instead of increasing. We discuss the effect in terms of an already proposed twofold action of NO$_2$, according to which the free carrier density increases, and simultaneously the energy bands are bent at the porous silicon surface.

cond-mat.mtrl-sci↗

arXiv2003

Role of microstructure in porous silicon gas sensors for NO$_2$

Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the structure is by modifying the composition of the electrochemical solution. We have found that best results are achieved using ethanoic solutions with HF concentration levels between 13% and 15%.

cond-mat.mtrl-sci↗

arXiv1995

Monte-Carlo simulations of the recombination dynamics in porous silicon

A simple lattice model describing the recombination dynamics in visible light emitting porous Silicon is presented. In the model, each occupied lattice site represents a Si crystal of nanometer size. The disordered structure of porous Silicon is modeled by modified random percolation networks in two and three dimensions. Both correlated (excitons) and uncorrelated electron-hole pairs have been studied. Radiative and non-radiative processes as well as hopping between nearest neighbor occupied sites are taken into account. By means of extensive Monte-Carlo simulations, we show that the recombination dynamics in porous Silicon is due to a dispersive diffusion of excitons in a disordered arrangement of interconnected Si quantum dots. The simulated luminescence decay for the excitons shows a stretched exponential lineshape while for uncorrelated electron-hole pairs a power law decay is suggested. Our results successfully account for the recombination dynamics recently observed in the experiments. The present model is a prototype for a larger class of models describing diffusion of particles in a complex disordered system.

mtrl-th↗