arXiv subjects

Lorenzo Rigutti

Publications and source records attributed to Lorenzo Rigutti.

4 recordsLinked to original sources

arXiv2026

Compositional Metrology of Atom Probe Applied to non-Metallic Materials

Laser-assisted Atom Probe Tomography (LA-APT) has demonstrated a unique potential for the study of the 3D distribution of atomic species in semiconductor materials and devices, and in a growing list of inorganic non-metallic solids. A crucial and often underestimated issue with APT is its accuracy in compositional measurements of non-metallic systems. This work introduces the principles of APT as an experimental technique, recalling the aspects potentially leading to compositional biases and underlining in particular the role of the surface electric field in governing the different physical-chemical phenomena that enable the measurement. It reviews the possible mechanisms of specific losses, as well as the methods for assessing a compositional bias and proposing possible correction methods. Finally, it establishes a state of the art on compositional biases in APT of non-metallic materials, on the basis of which it will be possible to conclude on specific recommendations for best practices, and the perspective of application of APT to new materials.

cond-mat.mtrl-sci↗

arXiv2023

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters

We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30° faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations.

physics.app-ph↗

arXiv2020

A Photonic Atom Probe coupling 3D Atomic Scale Analysis with in situ Photoluminescence Spectroscopy

Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (μPL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe.

physics.app-ph↗

arXiv2012

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to correlate their optical properties to their size, measured with atomic resolution. The direct correlation between the quantum disk size and emission wavelength provides evidence of the quantum confined Stark effect leading to an emission below the bulk GaN band gap for disks thicker than 2.6 nm. With the help of simulations, we show that the internal electric field in the studied quantum disks is smaller than what is expected in the quantum well case. We show evidence of a clear dispersion of the emission wavelengths of different quantum disks of identical size but different positions along the wire. This dispersion is systematically correlated to a change of the diameter of the AlN shell coating the wire and is thus attributed to the related strain variations along the wire. The present work opens the way both to fundamental studies of quantum confinement in closely packed quantum emitters and to characterizations of optoelectronic devices presenting carrier localization on the nanometer scale.

cond-mat.mtrl-sci↗