arXiv subjects

Louis Gaudreau

Publications and source records attributed to Louis Gaudreau.

14 recordsLinked to original sources

arXiv2026

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall↗

arXiv2024

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within these materials lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spin depending on which valley they reside. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of tungsten diselenide to 1D via electrostatic confinement, we demonstrate that spin-valley locking in combination with strong hole-hole interactions lead to a ferromagnetic state in which hole transport through the 1D system is spin-valley polarized, even without an applied magnetic field, and that the persistence of this spin-valley polarized configuration can be tuned by a global back-gate. This observation opens the possibility of implementing a robust and stable valley polarized system, essential for valleytronic applications.

cond-mat.mes-hall↗

arXiv2024

Interacting holes in a gated WSe$_2$ quantum channel: valley correlations and zigzag Wigner crystal

We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and Hartree-Fock and exact configuration-interaction tools we demonstrate the possibility of symmetry-broken valley polarized states for strongly interacting holes. The interplay between interactions, perpendicular magnetic field, and the lateral confinement asymmetry together with the strong Rashba spin-orbit coupling present in WSe$_2$ material is analyzed, and its impact on valley polarization is discussed. For weaker interactions, an investigation of the pair correlation function reveals a valley-antiferromagnetic phase. For low hole densities, a formation of a zigzag Wigner crystal phase is predicted. The impact of various hole liquid phases on transport in a high mobility quasi-one dimensional channel is discussed.

cond-mat.mes-hall↗

arXiv2024

Robust quantum dots charge autotuning using neural network uncertainty

This study presents a machine-learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant challenges in scaling up quantum dot technologies. This method exploits artificial neural networks to identify noisy transition lines in stability diagrams, guiding a robust exploration strategy leveraging neural networks' uncertainty estimations. Tested across three distinct offline experimental datasets representing different single quantum dot technologies, the approach achieves over 99% tuning success rate in optimal cases, where more than 10% of the success is directly attributable to uncertainty exploitation. The challenging constraints of small training sets containing high diagram-to-diagram variability allowed us to evaluate the capabilities and limits of the proposed procedure.

quant-ph↗

arXiv2022

Charge detection using a WSe$_2$ van der Waals heterostructure

Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection schemes based on 2D materials in complex quantum circuits.

cond-mat.mes-hall↗

arXiv2021

Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires

We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies.

quant-ph↗

arXiv2021

Gate controlled quantum dots in monolayer WSe2

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.

cond-mat.mes-hall↗

arXiv2021

Spin-orbit enabled quantum transport channels in a two-hole double quantum dot

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin flipping tunneling processes.

cond-mat.mes-hall↗

arXiv2017

Landau-Zener-Stuckelberg-Majorana interferometry of a single hole

We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flipping interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flipping, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

cond-mat.mes-hall↗

arXiv2015

Electro-mechanical control of an optical emitter using graphene

Active, in situ control of light at the nanoscale remains a challenge in modern physics and in nanophotonics in particular. A promising approach is to take advantage of the technological maturity of nano-electromechanical systems (NEMS) and to combine it with on-chip optics. However, in scaling down the dimensions of such integrated devices, the coupling of a NEMS to optical fields becomes challenging. Despite recent progress in nano-optomechanical coupling, active control of optical fields at the nanoscale has not been achieved with an on-chip NEMS thus far. Here, we show a new type of hybrid system, which consists of an on-chip graphene NEMS suspended a few tens of nanometers above nitrogen-vacancy centres (NVC), which are stable single photon emitters embedded in nano-diamonds. Electromechanical control of the photons emitted by the NVC is provided by electrostatic tuning of the graphene NEMS position, which is transduced to a modulation of NVC emission intensity. The optomechanical coupling between the graphene displacement and the NVC emission is based on near-field dipole-dipole interaction. This class of optomechanical coupling increases strongly for smaller distances, making it suitable for devices with nanoscale dimensions. These achievements hold promise for the selective control of single-emitter arrays on chip, optical spectroscopy of individual nano-objects, integrated optomechanical information processing and quantum optomechanics.

cond-mat.mes-hall↗

arXiv2014

Ultrafast electronic read-out of diamond NV centers coupled to graphene

Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.

cond-mat.mes-hall↗

arXiv2011

Hybrid graphene-quantum dot phototransistors with ultrahigh gain

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light absorption efficiency and to provide a gain mechanism where multiple charge carriers are created from one incident photon. Here, we take advantage of the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity. Exploiting charge transfer between the two materials, we realize for the first time, graphene-based phototransistors that show ultrahigh gain of 10^8 and ten orders of magnitude larger responsivity compared to pristine graphene photodetectors. These hybrid graphene-quantum dot phototransistors exhibit gate-tunable sensitivity, spectral selectivity from the shortwave infrared to the visible, and can be integrated with current circuit technologies.

cond-mat.mes-hall↗

arXiv2008

Stability Diagram of a Few-Electron Triple Dot

Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models.

cond-mat.mes-hall↗

arXiv2007

Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device.

cond-mat.mes-hall↗