arXiv subjects

Louis Veyrat

Publications and source records attributed to Louis Veyrat.

At least 19 recordsLinked to original sources

arXiv2026

Anomalous and Topological Hall Effects in Antiferromagnetic EuSn2As2 Nanostructures

We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel temperature ($T_N$ = 24 K) is related to the canted antiferromagnetic state (CAF) of an easy-plane antiferromagnet (AFM), with an increase of the saturation field when tilting the applied magnetic field away from the (ab) plane ($\mu_{0} H^{c}_{s}$ = 4.9 T, $\mu_{0} H^{ab}_{s}$ = 3.6 T). Higher-accuracy measurements in nanostructures up to 14 T further evidence a non-linear normal Hall response due to several electronic bands. Interestingly, the transverse resistance due to magnetism reveals an anomalous Hall effect in the CAF state, but also a topological Hall effect due to chiral spin textures, as found in AFM or helical magnets. The presence of real-space chiral spin texture, already reported in another magnetic topological insulator, $\mathrm{MnBi_{2}Te_{4}}$, could be a characteristic generally appearing in magnetic 3D topological insulators.

cond-mat.mes-hall↗

arXiv2025

Giant universal conductance fluctuations in the antiferromagnetic topological insulator MnBi2Te4

Intrinsic magnetic topological insulators can host quantum states with quantized magneto-electric responses, such as the axion and Chern insulators states evidenced in ultra-thin MnBi2Te4 films. Yet, whereas quantization is investigated thoroughly, transport properties related to the phase of charge carriers remains unexplored. Here, we study quantum coherent transport in mesoscopic Hall bars fabricated from thick exfoliated MnBi2Te4 flakes, and reveal the longest phase-coherence length ever observed in a mesoscopic magnet (about 500nm at 1K), associated to 2D topological surface states. In the fully-coherent regime, significant non-local contributions to quantum interference up to the micron scale lead to giant-amplitude universal conductance fluctuations (about 20e2/h). In the self-averaging regime, the statistical properties of conductance fluctuations confirm the 2D nature of quantum interference and different dephasing mechanisms are identified, as due to either magnetism or magnetic flux through coherent loops. Remarkably, the weak decoherence in magnetic topological insulator nanostructures show their potential to realize novel quantum spin interferometers based on dephasing by local magnetic textures at liquid-helium temperatures.

cond-mat.mes-hall↗

arXiv2025

Non-Hermitian topological devices with Chern insulators

Multi-terminal topological devices are a new generation of electronic devices with quantized properties robust against imperfections. In magnetic topological insulators, dissipationless edge states give functional devices in zero magnetic field, of interest for quantum metrology (resistance standard) or topological electronics (Chern networks). Here we show that a new generation of simple quantum circuits (disk, ring) with non-Hermitian topology, based on the interconnection of 1D Chern states in the quantum anomalous Hall regime, can have a much stronger quantization of their invariant than that of the Chern invariant itself, when measured in a non-metrology grade setup - that is, in industry-relevant conditions. Remarkably, the chirality-related topological skin effect is realized without the need of a magnetic field or an electrical gate, with a record degree of localization for a quantum Hall device. This new type of topological quantum devices based on magnets, with an exponential response that can be switched at small magnetic fields (about 200mT), can operate at liquid-Helium temperature with a good quantization and have some potential as cryogenic sensors for applications in high-precision impedance or magnetic field measurements.

cond-mat.mes-hall↗

arXiv2025

Transport evidence of surface states in magnetic topological insulator MnBi2Te4

Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, leading to the quantum anomalous Hall effect in ultra-thin nanostructures. For thicker nanostructures, quantization is severely reduced by the co-existence of edge states with other quasi-particles, usually considered as bulk states. Yet, surface states also exist above the magnetic gap, but it remains difficult to identify electronic subbands by electrical measurements due to strong disorder. Here we unveil surface states in MnBi2Te4 nanostructures, using magneto-transport in very-high magnetic fields up to 55 T, giving evidence of Shubnikov-de-Haas oscillations above 40 T. A detailed analysis confirms the 2D nature of these quantum oscillations, thus establishing an alternative method to photoemission spectroscopy for the study of topological surface states in magnetic topological insulators, using Landau level spectroscopy.

cond-mat.mes-hall↗

arXiv2025

Room temperature Planar Hall effect in nanostructures of trigonal-PtBi2

Trigonal-PtBi2 has recently garnered significant interest as it exhibits unique superconducting topological surface states due to electron pairing on Fermi arcs connecting bulk Weyl nodes. Furthermore, topological nodal lines have been predicted in trigonal-PtBi2, and their signature was measured in magnetotransport as a dissipationless, i.e. odd under a magnetic field reversal, anomalous planar Hall effect. Understanding the topological superconducting surface state in trigonal-PtBi2 requires unravelling the intrinsic geometric properties of the normal state electronic wavefunctions and further studies of their hallmarks in charge transport characteristics are needed. In this work, we reveal the presence of a strong dissipative, i.e. even under a magnetic field reversal, planar Hall effect in PtBi2 at low magnetic fields and up to room temperature. This robust response can be attributed to the presence of Weyl nodes close to the Fermi energy. While this effect generally follows the theoretical prediction for a planar Hall effect in a Weyl semimetal, we show that it deviates from theoretical expectations at both low fields and high temperatures. We also discuss the origin of the PHE in our material, and the contributions of both the topological features in PtBi2 and its possible trivial origin. Our results strengthen the topological nature of PtBi2 and the strong influence of quantum geometric effects on the electronic transport properties of the low energy normal state.

cond-mat.mes-hall↗

arXiv2025

Inducing ferromagnetism by structural engineering in a strongly spin-orbit coupled oxide

Magnetic materials with strong spin-orbit coupling (SOC) are essential for the advancement of spin-orbitronic devices, as they enable efficient spin-charge conversion, complex magnetic structures, spin-valley physics, topological phases and other exotic phenomena. 5d transition-metal oxides such as SrIrO3 feature large SOC, but usually show paramagnetic behavior due to broad bands and a low density of states at the Fermi level, accompanied by a relatively low Coulomb repulsion. Here, we unveil ferromagnetism in 5d SrIrO3 thin films grown on SrTiO3 (111). Through substrate-induced structural engineering, a zigzag stacking of three-unit-cell thick layers along the [111] direction is achieved, stabilizing a ferromagnetic state at the interfaces. Magnetotransport measurements reveal an anomalous Hall effect below ~30 K and hysteresis in the Hall conductivity below 7 K, indicating ferromagnetic ordering. X-ray magnetic circular dichroism further supports these results. Theoretical analysis suggests that the structural engineering of the IrO6 octahedral network enhances the density of states at the Fermi level and thus stabilizes Stoner ferromagnetism. This work highlights the potential of structurally engineered 5d oxides for spin-orbitronic devices, where efficient control of SOC-induced magnetic phases by electric currents can lead to lower energy consumption and improved performance in next-generation device technologies.

cond-mat.mtrl-sci↗

arXiv2024

Non-Hermitian topology in the quantum Hall effect of graphene

Quantum Hall phases have recently emerged as a platform to investigate non-Hermitian topology in condensed-matter systems. This platform is particularly interesting due to its tunability, which allows to modify the properties and topology of the investigated non-Hermitian phases by tuning external parameters of the system such as the magnetic field. Here, we show the tunability of non-Hermitian topology chirality in a graphene heterostructure using a gate voltage. By changing the charge carrier density, we unveil some novel properties specific to different quantum Hall regimes. First, we find that the best quantization of the non-Hermitian topological invariant is interestingly obtained at very high filling factor rather than on well-quantized quantum Hall plateaus. This is of particular importance for the efficient operation of devices based on non-Hermitian topology. Moreover, we observe an additional non-Hermitian topological phase in the insulating nu=0 quantum Hall plateau, which survives at lower fields than the opening of the nu=0 gap, confirming a recent prediction of a disorder-induced trivial phase. Our results evidence graphene as a promising platform for the study of non-Hermitian physics and of emergent phases in such topological devices.

cond-mat.mes-hall↗

arXiv2024

Dissipationless transport signature of topological nodal lines

Topological materials, such as topological insulators or semimetals, usually not only reveal the nontrivial properties of their electronic wavefunctions through the appearance of stable boundary modes, but also through very specific electromagnetic responses. The anisotropic longitudinal magnetoresistance of Weyl semimetals, for instance, carries the signature of the chiral anomaly of Weyl fermions. However for topological nodal line semimetals -- materials where the valence and conduction bands cross each other on one-dimensional curves in the three-dimensional Brillouin zone -- such a characteristic has been lacking. Here we report the discovery of a peculiar charge transport effect generated by topological nodal lines: a dissipationless transverse signal in the presence of coplanar electric and magnetic fields, which originates from a Zeeman-induced conversion of topological nodal lines into Weyl nodes under infinitesimally small magnetic fields. We evidence this dissipationless topological response in trigonal \ce{PtBi2} persisting up to room temperature, and unveil the extensive topological nodal lines in the band structure of this non-magnetic material. These findings provide a new pathway to engineer Weyl nodes by arbitrary small magnetic fields and reveal that bulk topological nodal lines can exhibit non-dissipative transport properties.

cond-mat.mes-hall↗

arXiv2023

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field.

cond-mat.mes-hall↗

arXiv2023

Observation of non-Hermitian topology in a multi-terminal quantum Hall device

Quantum devices characterized by non-Hermitian topology are predicted to show highly robust and potentially useful properties, but realizing them has remained a daunting experimental task. This is because non-Hermiticity is often associated with gain and loss, which would require precise tailoring to produce the signatures of nontrivial topology. Here, instead of gain/loss, we use the nonreciprocity of the quantum Hall edge states to directly observe non-Hermitian topology in a multi-terminal quantum Hall ring. Our transport measurements evidence a robust, non-Hermitian skin effect: currents and voltages show an exponential profile, which persists also across Hall plateau transitions away from the regime of maximum non-reciprocity. Our observation of non-Hermitian topology in a quantum device introduces a scalable experimental approach to construct and investigate generic non-Hermitian systems.

cond-mat.mes-hall↗

arXiv2023

Absence of edge reconstruction for quantum Hall edge channels in graphene devices

Electronic edge states in topological insulators have become a major paradigm in physics. The oldest and primary example is that of quantum Hall (QH) edge channels that propagate along the periphery of two-dimensional electron gases (2DEGs) under perpendicular magnetic field. Yet, despite 40 years of intensive studies using a variety of transport and scanning probe techniques, imaging the real-space structure of QH edge channels has proven difficult, mainly due to the buried nature of most 2DEGs in semiconductors. Here, we show that QH edge states in graphene are confined to a few magnetic lengths at the crystal edges by performing scanning tunneling spectroscopy up to the edge of a graphene flake on hexagonal boron nitride. These findings indicate that QH edge states are defined by boundary conditions of vanishing electronic wavefunctions at the crystal edges, resulting in ideal one-dimensional chiral channels, free of electrostatic reconstruction. We further evidence a uniform charge carrier density at the edges, contrasting with conjectures on the existence of non-topological upstream modes. The absence of electrostatic reconstruction of quantum Hall edge states has profound implications for the universality of electron and heat transport experiments in graphene-based systems and other 2D crystalline materials.

cond-mat.mes-hall↗

arXiv2022

Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3

Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm$^2$/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices.

cond-mat.mes-hall↗

arXiv2022

Crystal Growth, Exfoliation and Magnetic Properties of Quaternary Quasi-Two-Dimensional CuCrP$_2$S$_6$

We report optimized crystal growth conditions for the quaternary compound CuCrP$_2$S$_6$ by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. CuCrP$_2$S$_6$ is structurally closely related to the $M_2$P$_2$S$_6$ family ($M$: transition metal), which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. We present successful exfoliation of such as-grown crystals down to thicknesses of 2.8 nm corresponding to 4 layers. CuCrP$_2$S$_6$ crystallizes in the monoclinic space group $C2/c$. Magnetization measurements reveal an antiferromagnetic ground state with $T_\textrm{N} \approx 30$ K and a positive Curie-Weiss temperature in agreement with dominant ferromagnetic intralayer coupling. Specific heat measurements confirm this magnetic phase transition and the magnetic order is suppressed in an external magnetic field of about 6 T (8 T) applied parallel (perpendicular) to the $ab$ plane. At higher temperatures between 140-200 K additional broad anomalies associated with structural changes accompanying antiferroelectric ordering are detected in our specific heat studies.

cond-mat.str-el↗

arXiv2021

A tunable Fabry-Pérot quantum Hall interferometer in graphene

Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and often obscured by charging effects. Here we show that high-mobility monolayer graphene equipped with a series of gate-tunable quantum point contacts that act as electron beam-splitters provides a model system to perform Fabry-Pérot quantum Hall interferometry. We observe high-visibility Aharonov-Bohm interference free of charging effects and widely tunable through electrostatic gating or magnetic field, in remarkable agreement with theory. A coherence length of $\mathbf{10 \,μm}$ at a temperature of $0.02$ K allows us to further achieve coherently-coupled double Fabry-Pérot interferometry. Our results open a new avenue for quantum Hall interferometry and the exploitation of topological excitations for quantum computation.

cond-mat.mes-hall↗

arXiv2021

Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

cond-mat.mtrl-sci↗

arXiv2019

Helical quantum Hall phase in graphene on SrTiO$_3$

The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation.

cond-mat.mes-hall↗

arXiv2018

Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene

We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-Pérot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field $B^*$ corresponding to the cyclotron radius equal to the npn cavity length, Fabry-Pérot resonances vanish and snake trajectories are guided through the constriction with a characteristic set of conductance oscillations. Increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction, with distortions due to the combination of confinement and de-confinement of Landau levels in a saddle potential. These observations are confirmed by numerical calculations.

cond-mat.mes-hall↗

arXiv2015

Band bending inversion in Bi$_2$Se$_3$ nanostructures

Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.

cond-mat.mes-hall↗