SearcharxivSearch

arXiv subjects

Louis-Serge Bouchard

Publications and source records attributed to Louis-Serge Bouchard.

2 recordsLinked to original sources

Landslide Susceptibility Modeling by Interpretable Neural Network

Landslides are notoriously difficult to predict because numerous spatially and temporally varying factors contribute to slope stability. Artificial neural networks (ANN) have been shown to improve prediction accuracy but are largely uninterpretable. Here we introduce an additive ANN optimization framework to assess landslide susceptibility, as well as dataset division and outcome interpretation techniques. We refer to our approach, which features full interpretability, high accuracy, high generalizability and low model complexity, as superposable neural network (SNN) optimization. We validate our approach by training models on landslide inventory from three different easternmost Himalaya regions. Our SNN outperformed physically-based and statistical models and achieved similar performance to state-of-the-art deep neural networks. The SNN models found the product of slope and precipitation and hillslope aspect to be important primary contributors to high landslide susceptibility, which highlights the importance of strong slope-climate couplings, along with microclimates, on landslide occurrences.

cs.LG

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$-type Pb$_{1-x}$Sn$_x$Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$Pb, $^{119}$Sn, and $^{125}$Te line shapes, spin-lattice relaxation rates, and Knight shifts provide site-specific characterization of the electronic band structure. This probe of the electronic band structure shows that the band inversion is unaffected by lattice distortions but related to spatial electronic inhomogeneities formed by Sn incorporation into the PbTe matrix. Strong relativistic effects are found to be responsible for the band inversion, regardless of carrier type and concentration, suggesting a novel interpretation of the band gap evolution with composition. The temperature dependences of the NMR parameters reveal a negative temperature coefficient of the direct gap for SnTe and positive coefficient for PbTe.

cond-mat.mes-hall