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Lu-Tao Weng

Publications and source records attributed to Lu-Tao Weng.

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AI-Driven Structure Refinement of X-ray Diffraction

Artificial intelligence can rapidly propose candidate phases and structures from X-ray diffraction (XRD), but these hypotheses often fail in downstream refinement because peak intensities cannot be stably assigned under severe overlap and diffraction consistency is enforced only weakly. Here we introduce the whole-pattern expectation--maximization (WPEM) algorithm, a physics-constrained whole-pattern decomposition and refinement workflow that turns Bragg's law into an explicit constraint within a batch expectation--maximization framework. WPEM models the full profile as a probabilistic mixture density and iteratively infers component-resolved intensities while keeping peak centres Bragg-consistent, producing a continuous, physically admissible intensity representation that remains stable in heavily overlapped regions and in the presence of mixed radiation or multiple phases. We benchmark WPEM on standard reference patterns (PbSO$_4$ and Tb$_2$BaCoO$_5$), where it yields lower $R_p/R_{wp}$ than widely used packages (FullProf and TOPAS) under matched refinement conditions. We further demonstrate generality across realistic experimental scenarios, including phase-resolved decomposition in multiphase materials, quantitative recovery of mixture compositions, separation of crystalline peaks from amorphous backgrounds in semicrystalline systems, high-throughput operando lattice tracking, automated refinement of compositionally disordered solid solutions, and quantitative phase-resolved analysis of complex archaeological samples from synchrotron powder XRD. By providing Bragg-consistent, uncertainty-aware intensity partitioning as a refinement-ready interface, WPEM closes the gap between AI-generated hypotheses and diffraction-admissible structure refinement on challenging XRD data.

cond-mat.mtrl-sci

Selective Defect Formation in Hexagonal Boron Nitride

Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabricate hBN single photon emitters (SPEs) with desired emission properties in two isolated spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (APCVD)--a process we term gettering. Using the gettering technique we deterministically place the resulting zero-phonon line (ZPL) between the regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with tailored emission properties across a broad spectral range. Our ability to control defect formation during hBN growth provides a simple and cost-effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide range of applications. Our results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies.

physics.app-ph

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications

cond-mat.mes-hall