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Luc Thomas

Publications and source records attributed to Luc Thomas.

4 recordsLinked to original sources

A Vision-Language Foundation Model for Zero-shot Clinical Collaboration and Automated Concept Discovery in Dermatology

Medical foundation models have shown promise in controlled benchmarks, yet widespread deployment remains hindered by reliance on task-specific fine-tuning. Here, we introduce DermFM-Zero, a dermatology vision-language foundation model trained via masked latent modelling and contrastive learning on over 4 million multimodal data points. We evaluated DermFM-Zero across 20 benchmarks spanning zero-shot diagnosis and multimodal retrieval, achieving state-of-the-art performance without task-specific adaptation. We further evaluated its zero-shot capabilities in three multinational reader studies involving over 1,100 clinicians. In primary care settings, AI assistance enabled general practitioners to nearly double their differential diagnostic accuracy across 98 skin conditions. In specialist settings, the model significantly outperformed board-certified dermatologists in multimodal skin cancer assessment. In collaborative workflows, AI assistance enabled non-experts to surpass unassisted experts while improving management appropriateness. Finally, we show that DermFM-Zero's latent representations are interpretable: sparse autoencoders unsupervisedly disentangle clinically meaningful concepts that outperform predefined-vocabulary approaches and enable targeted suppression of artifact-induced biases, enhancing robustness without retraining. These findings demonstrate that a foundation model can provide effective, safe, and transparent zero-shot clinical decision support.

cs.CV

Impact of external magnetic fields on STT-MRAM

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields.

physics.app-ph

Domain wall trajectory determined by its fractional topological edge defects

A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW. Here we show how we can understand and control the trajectory of DWs in magnetic branched networks, composed of connected nanowires, by considering their fractional elementary topological defects and how they interact with those innate to the network. We first develop a highly reliable mechanism for the injection of a DW of a given chirality into a nanowire and show that its chirality determines which branch the DW follows at a symmetric Y-shaped magnetic junction - the fundamental building block of the network. Using these concepts, we unravel the origin of the one-dimensional nature of magnetization reversal of connected artificial spin ice systems that have been observed in the form of Dirac strings.

cond-mat.mes-hall

Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains

We review our recent magnetotransport and micromagnetic studies of lithographically defined epitaxial thin film structures of bcc Fe and hcp Co with stripe domains. Micromagnetic structure and resistivity anisotropy are shown to be the predominant sources of low field magnetoresistance (MR) in these microstructures, with domain wall (DW) effects smaller but observable (DW-MR $\lesssim 1 %$). In Fe, at low temperature, in a regime in which fields have a significant effect on electron trajectories, a novel negative DW contribution to the resistivity is observed. In hcp Co microstructures, temperature dependent transport measurements for current perpendicular and parallel to walls show that any additional resistivity due to DW scattering is very small.

cond-mat.mes-hall