arXiv subjects

Luca Barbisan

Publications and source records attributed to Luca Barbisan.

2 recordsLinked to original sources

arXiv2026

DynamicSound simulator for simulating moving sources and microphone arrays

Developing algorithms for sound classification, detection, and localization requires large amounts of flexible and realistic audio data, especially when leveraging modern machine learning and beamforming techniques. However, most existing acoustic simulators are tailored for indoor environments and are limited to static sound sources, making them unsuitable for scenarios involving moving sources, moving microphones, or long-distance propagation. This paper presents DynamicSound an open-source acoustic simulation framework for generating multichannel audio from one or more sound sources with the possibility to move them continuously in three-dimensional space and recorded by arbitrarily configured microphone arrays. The proposed model explicitly accounts for finite sound propagation delays, Doppler effects, distance-dependent attenuation, air absorption, and first-order reflections from planar surfaces, yielding temporally consistent spatial audio signals. Unlike conventional mono or stereo simulators, the proposed system synthesizes audio for an arbitrary number of virtual microphones, accurately reproducing inter-microphone time delays, level differences, and spectral coloration induced by the environment. Comparative evaluations with existing open-source tools demonstrate that the generated signals preserve high spatial fidelity across varying source positions and acoustic conditions. By enabling the generation of realistic multichannel audio under controlled and repeatable conditions, the proposed open framework provides a flexible and reproducible tool for the development, training, and evaluation of modern spatial audio and sound-source localization algorithms.

eess.AS↗

arXiv2020

Origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties) and the possibility of a direct integration in the Si technology. Here we use a multiscale approach, based on both classical molecular dynamics (MD) simulations and first-principle calculations, to investigate in-depth the origin, nature and properties of most common 3C-SiC/Si(001) extended defects. Our MD simulations reveal a natural path for the formation of partial dislocation complexes terminating both double and triple SF's. MD results are used as input for superior DFT calculations, allowing us to better determine the core structure and to investigate electronic properties. It turns out that the partial dislocation complexes terminating double and triple SFs are responsible for the introduction of electronic states significantly filling the gap. On the other hand, individual partial dislocations terminating single SFs only induce states very close to the gap edge. We conclude that partial dislocation complexes, in particular the most abundant triple ones, are killer defects in terms of favoring leakage currents. Suggestions coming from theory/simulations for devising a strategy to lower their occurrence are discussed.

cond-mat.mtrl-sci↗