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Luca Sapienza

Publications and source records attributed to Luca Sapienza.

At least 19 recordsLinked to original sources

Algorithmic Advantage on a Gate-Based Photonic Quantum Neural Network

We report on a gate-based variational quantum classifier implemented with single photons and probabilistic gates, to emulate the standard quantum circuit model framework. We evaluate the expressive power of two deployable quantum neural networks (QNNs) by computing their effective dimension, a capacity measure grounded in a proven generalization-error bound, and compare them with classical artificial neural networks (ANNs) of equivalent trainable-parameter count. Supervised binary classification tasks are used to benchmark performance across photonic and superconducting QNNs, both of which exhibit superior converged (lower) cross-entropy loss and (higher) prediction accuracy relative to matched-parameter ANNs. For a nonlinearly separable task, our photonic QNN with a single pair of trainable parameters successfully converged (loss 0.04 and accuracy 100%), whereas the equivalent ANN failed to learn the decision boundary, saturating at random-guessing performance. We simulate photonic quantum circuits, training them on the XOR problem and a two-class Iris subset using gradient-free optimization, and assess their robustness to sampling errors under realistic noise processes including photon loss and phase-shifter imperfections. Circuits with comparatively high effective dimension were deployed remotely on a six-qubit photonic quantum processor, achieving classification accuracies of up to 100% in both online and offline learning settings. Notably, even the simplest QNN deployed, with just two trainable parameters, successfully solved tasks that classically require ANNs with at least quadruple the number of parameters, suggesting an emergent algorithmic advantage. Overall, these results demonstrate a clear proof-of-principle that gate-based QNNs can be realized and trained effectively on current photonic hardware, providing proof of algorithmic advantage on a gate-based photonic QNN.

quant-ph

Multimode Nanobeam Photonic Crystal Cavities for Purcell Enhanced Quantum Dot Emission

Epitaxial III-V semiconductor quantum dots in nanopthonic structures are promising candidates for implementing on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. Quantum dot proximity to the etched sidewalls of hosting nanophotonic structures, however, has been shown to induce linewidth broadening of excitonic transitions, which limits emitted single-photon indistinguishability. Here, we design and demonstrate GaAs photonic crystal nanobeam cavities that maximize quantum dot distances to etched sidewalls beyond an empirically determined minimum that curtails spectral broadening. Although such geometric constraint necessarily leads to multimode propagation in nanobeams, which significantly complicates high quality factor cavity design, we achieve resonances with quality factors $Q\approx10^3$, which offer the potential for achieving Purcell radiative rate enhancements $F_p\approx100$.

physics.optics

Two-colour photon correlations probe coherent vibronic contributions to electronic excitation transport under incoherent illumination

Identifying signatures of quantum coherent behaviour in photoactive systems that are maintained in stationary states away from thermal equilibrium is an open problem of wide interest in a variety of physical scenarios, including single photosynthetic complexes subjected to continuous incoherent illumination. Here we consider a prototype light-harvesting heterodimer exhibiting coherent and collective exciton-vibration interactions and show that the second-order frequency-filtered correlations of fluorescence photons provide insightful information on the influence of such coherent interactions for different transitions, thereby yielding fundamentally different photon-counting statistics. Furthermore, we show that coherent vibronic mechanisms strongly affect the asymmetries characteristic of time-resolved photon cross-correlations and manifest themselves in a time-dependent violation of the Cauchy-Schwarz inequality bounding cross-correlations for classically fluctuating fields. We finally discuss how such second-order correlation asymmetry establishes important connections between coherent vibronic interactions, directional exciton population transport, and violation of quantum detailed balance. Our work then indicates that measurement of two-colour photon correlation asymmetry can be an important avenue to investigate quantum behaviour of single photoactive biomolecular and chemical systems under incoherent illumination conditions.

physics.chem-ph

Direct-Laser-Written Polymer Nanowire Waveguides for Broadband Single Photon Collection from Epitaxial Quantum Dots into a Gaussian-like Mode

Single epitaxial quantum dots (QDs) embedded in nanophotonic geometries are a leading technology for quantum light generation. However, efficiently coupling their emission into a single mode fiber or Gaussian beam often remains challenging. Here, we use direct laser writing (DLW) to address this challenge by fabricating 1 $μ$m diameter polymer nanowires (PNWs) in-contact-with and perpendicular-to a QD-containing GaAs layer. QD emission is coupled to the PNW's HE$_{11}$ waveguide mode, enhancing collection efficiency into a single-mode fiber. PNW fabrication does not alter the QD device layer, making PNWs well-suited for augmenting preexisting in-plane geometries. We study standalone PNWs and PNWs in conjunction with metallic nanoring devices that have been previously established for increasing extraction of QD emission. We report methods that mitigate standing wave reflections and heat, caused by GaAs's absorption/reflection of the lithography beam, which otherwise prevent PNW fabrication. We observe a factor of $(3.0 \pm 0.7)\times$ improvement in a nanoring system with a PNW compared to the same system without a PNW, in line with numerical results, highlighting the PNW's ability to waveguide QD emission and increase collection efficiency simultaneously. These results demonstrate new DLW functionality in service of quantum emitter photonics that maintains compatibility with existing top-down fabrication approaches.

physics.optics

Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$μ$m x 80$μ$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.

physics.app-ph

Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector

To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications.

physics.optics

Control of single quantum emitters in bio-inspired aperiodic nano-photonic devices

Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial for cavity quantum electrodynamics experiments and for the development of classical and quantum light sources. Here, we report on the demonstration of enhanced light-matter interaction and Purcell effects on a chip, based on bio-inspired aperiodic devices fabricated in silicon nitride and gallium arsenide. Internal light sources, namely optically-active defect centers in silicon nitride and indium arsenide single quantum dots, are used to image and characterize, by means of micro-photoluminescence spectroscopy, the individual optical modes confined by photonic membranes with Vogel-spiral geometry. By studying the statistics of the measured optical resonances, in partnership with rigorous multiple scattering theory, we observe log-normal distributions and report quality factors with values as high as 2201+/-443. Building on the strong light confinement achieved in this novel platform, we further investigate the coupling of single semiconductor quantum dots to the confined optical modes. Our results show cavity quantum electrodynamics effects providing strong modifications of the spontaneous emission decay of single optical transitions: we show control of the decay lifetime of single emitters with a dynamic range reaching 20. Our findings improve the understanding of the fundamental physical properties of light-emitting Vogel-spiral systems, show their application to quantum photonic devices, and form the basis for the further development of classical and quantum active devices on a chip.

physics.optics

Combined metallic nano-rings and solid-immersion lenses for bright emission from single InAs/GaAs quantum dots

Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this issue, we present a device that combines a metallic nano-ring, positioned on the sample surface and centered around the emitter, and an epoxy-based super-solid immersion lens, deterministically deposited above the ring devices. We show that the combined broadband lensing effect of the nano-ring and of the super-solid immersion lens significantly increases the extraction of light emitted by single InAs/GaAs quantum dots into free space: we observe enhancements in the emitted intensity by the nano-ring of up to a factor 20 and by the super-solid immersion lens of up to a factor 10. Such cumulative enhancements allow us to measure photon fluxes approaching 1 million counts per second, from a single InAs/GaAs quantum dot in bulk. The combined broad-band enhancement in the extraction of light can be implemented with any kind of classical and quantum solid-state emitter and opens the path to the realisation of scalable bright devices. The same approach can also be implemented to improve the absorption of light, for instance for small-area broadband photo-detectors.

physics.app-ph

GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications

We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single quantum dots, at near-infrared wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are ideal candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

physics.optics

Optical sensing with Anderson-localised light

We show that fabrication imperfections in silicon nitride photonic crystal waveguides can be used as a resource to efficiently confine light in the Anderson-localised regime and add functionalities to photonic devices. Our results prove that disorder-induced localisation of light can be utilised to realise an alternative class of high-quality optical sensors operating at room temperature. We measure wavelength shifts of optical resonances as large as 15.2 nm, more than 100 times the spectral linewidth of 0.15\,nm, for a refractive index change of about 0.38. By studying the temperature dependence of the optical properties of the system, we report wavelength shifts of up to about 2 nm and increases of more than a factor 2 in the quality factor of the cavity resonances, when going from room to cryogenic temperatures. Such a device can allow simultaneous sensing of both local contaminants and temperature variations, monitored by tens of optical resonances spontaneously appearing along a single photonic crystal waveguide. Our findings demonstrate the potential of Anderson-localised light in photonic crystals for scalable and efficient optical sensors operating in the visible and near-infrared range of wavelengths.

physics.optics

Metallic nanorings for broadband, enhanced extraction of light from solid-state emitters

We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as high as a factor 20. Such a device is intrinsically broadband and therefore compatible with any kind of solid-state light source. We foresee the fabrication of metallic rings via scalable techniques, like nano-imprint, and their implementation to improve the emission of classical and quantum light from solid-state sources. Furthermore, while increasing the brightness of the devices, the metallic rings can also act as top contacts for the local application of electric fields for carrier injection or wavelength tuning.

physics.optics

Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters

We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a $>50$~$μ$m~$\times$~50~$μ$m field of view are determined with $\approx4.5$~nm uncertainty (one standard deviation) in a 1~s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross-correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.

quant-ph

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions. This behavior is observed across multiple wafers produced in different growth chambers. Our characterization approach is relevant to applications in which single quantum dots are embedded within nanofabricated photonic devices, where such large surface features can affect the interaction with confined optical fields and the quality of the single-photon emission. In particular, we anticipate using this approach to screen quantum dots not only based on their optical properties, but also their surrounding surface topographies.

cond-mat.mes-hall

A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices

physics.optics

Anderson localisation of visible light on a nanophotonic chip

We demonstrate Anderson localisation of visible light on a chip and report quality factors exceeding highly engineered two-dimensional cavities. Our results reverse the trend, observed so far, of the quality of disorder-induced light confinement being orders of magnitude lower than engineered devices. Furthermore, by implementing a sensitive imaging technique, we directly visualise the localised modes, determine their position on the device and measure their spatial extension. Our findings prove the potential of disorder-induced localised light for scalable, room temperature, optical devices, operating in the visible range of wavelengths.

physics.optics

Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths

We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and $g$-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in the diamagnetic coefficient when rotating the magnetic field from Faraday to Voigt geometry due to the unique dot morphology. The complete spectroscopic characterization of the fundamental properties of long-wavelength dot-in-a-well structures provides insight for the applicability of quantum technologies based on quantum dots emitting at telecom wavelengths.

cond-mat.mes-hall

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position uncertainty < 30 nm (< 10 nm when using a solid immersion lens), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).

cond-mat.mes-hall

Spectral broadening and shaping of nanosecond pulses: towards shaping of single photons from quantum emitters

We experimentally demonstrate spectral broadening and shaping of exponentially-decaying nanosecond pulses via nonlinear mixing with a phase-modulated pump in a periodically-poled lithium niobate (PPLN) waveguide. A strong, 1550~nm pulse is imprinted with a temporal phase and used to upconvert a weak 980 nm pulse to 600 nm while simultaneously broadening the spectrum to that of a Lorentzian pulse up to 10 times shorter. While the current experimental demonstration is for spectral shaping, we also provide a numerical study showing the feasibility of subsequent spectral phase correction to achieve temporal compression and re-shaping of a 1~ns mono-exponentially decaying pulse to a 250 ps Lorentzian, which would constitute a complete spectro-temporal waveform shaping protocol. This method, which uses quantum frequency conversion in PPLN with >100:1 signal-to-noise ratio, is compatible with single photon states of light.

physics.optics