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Ludi Qin

Publications and source records attributed to Ludi Qin.

2 recordsLinked to original sources

Thermal Casimir Force Imaging of Nonequilibrium Hot Electrons

The thermal Casimir effect, arising from fluctuating electromagnetic fields of thermally agitated charges, induces thermosensitive forces and presents a novel approach to detecting nanoscale hot electrons, elusive yet ubiquitous in modern miniaturized transistors. However, detecting thermal Casimir forces at the nanoscale remains extremely challenging due to background forces such as electrostatic force and quantum Casimir force. In this study, we present the first non-contact force measurement of hot electrons based on the thermal Casimir effect. Using an atomic force microscope (AFM) with a dual-resonant tip, we achieve thermosensitive force detection of nonequilibrium hot electrons while effectively suppressing background thermo-insensitive forces, thereby distinguishing them from cold electrons. In silicon nanoconstriction devices, the measured thermal Casimir pressure reaches approximately 3 bar at a separation of 5 nm at an electron temperature of about 10^3 K. Our work introduces a novel methodology for hot electron nanothermometry and provides critical insights into the thermo-mechanical properties of post-Moore nanoelectronics.

cond-mat.mes-hall

Geometrical Tailoring of Shockley-Ramo Bipolar Photocurrent in Self-powered GaAs Nanodevices

Bipolar photoresponse - where photocurrent polarity reverses with excitation wavelength, gate voltage, or other conditions - is essential for optical logic, neuromorphic computing, and imaging. Unlike unipolar responses, bipolar behavior enables direct binary encoding and enhanced photodetection contrast. However, in conventional photoconductive or photovoltaic systems, the simultaneous and opposite-directional transport of electrons and holes often suppresses polarity switching. Recent self-powered Shockley-Ramo (SR) photoresponse in gapless materials also show only unipolar signals due to strong, irreversible electron-hole asymmetry. Here, we demonstrate for the first-time bipolar SR photoresponse in GaAs nanoconstriction devices by exploiting reversible electron-hole asymmetry. The longer carrier lifetimes in GaAs enable sub-diffusion-length control of carrier dynamics through geometry. By tuning photocarrier dynamics near the nanoconstriction for both majority electrons and minority holes, we modulate the SR response to exhibit dual polarities. At low excitation, photoelectrons dominate; as excitation increases, intervalley scattering populates higher-energy L-valleys, reducing electron contribution and leading to polarity reversal driven by the growing dominance of photoexcited holes. These results, supported by SR theory, show that nanoscale geometric engineering, together with the reversible electron-hole asymmetry, enables self-powered bipolar photocurrent responses, offering new routes toward advanced optoelectronic devices.

physics.optics