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Ludovic Delbes

Publications and source records attributed to Ludovic Delbes.

2 recordsLinked to original sources

Superconductivity in strongly overdoped cuprates: beyond the single-band model

In order to explain the observation of an extended superconducting region in several overdoped cuprates, which contrasts the dome scenario, by means of neutron and synchrotron x-ray powder diffraction we study the crystal structure of YBa$_2$Cu$_3$O$_{y}$, where strong oxygen overdoping up to $y = 7.4$ is achieved under high-pressure. A bond valence sum analysis indicates that 1/5 of the extra holes created by the excess oxygen are transferred to the CuO$_2$ planes, thus increasing the hole density up to $p=0.27$ hole/Cu, where superconductivity is expected to vanish according to the dome scenario. Instead, our data confirm a previous observation [Okai, Ono and Mitsuhashi, Physica C: Superconductivity {\bf 366}, 164 (2002)] that the superconducting critical temperature, $T_c$, remains constant with $y$. Our data analysis accounts for this discrepancy in terms of the much shorter bond between the apical oxygen and the planar Cu ion, which suggests that the extra holes occupy the $a_1$-symmetry states formed by $d_{3z^2-r^2}$ orbitals, instead of the usual $b_1$-symmetry Zhang-Rice singlet states formed by $d_{x^2-y^2}$ orbitals. Suitable spectroscopic measurements on single crystals may support such a two-band scenario, which would require a totally different theoretical approach to explain superconductivity in cuprates.

cond-mat.supr-con

Structural phase transition and bandgap control through mechanical deformation in layered semiconductors 1T-ZrX2 (X = S, Se)

Applying elastic deformation can tune a material physical properties locally and reversibly. Spatially modulated lattice deformation can create a bandgap gradient, favouring photo-generated charge separation and collection in optoelectronic devices. These advantages are hindered by the maximum elastic strain that a material can withstand before breaking. Nanomaterials derived by exfoliating transition metal dichalcogenides TMDs are an ideal playground for elastic deformation, as they can sustain large elastic strains, up to a few percent. However, exfoliable TMDs with highly strain-tunable properties have proven challenging for researchers to identify. We investigated 1T-ZrS2 and 1T-ZrSe2, exfoliable semiconductors with large bandgaps. Under compressive deformation, both TMDs dramatically change their physical properties. 1T-ZrSe2 undergoes a reversible transformation into an exotic three-dimensional lattice, with a semiconductor-to-metal transition. In ZrS2, the irreversible transformation between two different layered structures is accompanied by a sudden 14 % bandgap reduction. These results establish that Zr-based TMDs are an optimal strain-tunable platform for spatially textured bandgaps, with a strong potential for novel optoelectronic devices and light harvesting.

cond-mat.mtrl-sci