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Luigi Rovati

Publications and source records attributed to Luigi Rovati.

2 recordsLinked to original sources

Graphene Electric Double-Layer Transistors for Enhanced-Sensitivity Label-Free Detection of Human Serum Albumin

Accurate detection of human serum albumin (HSA) is essential for the early diagnosis and monitoring of renal and hepatic disorders. We present a graphene-based electrolyte-gated field-effect transistor (EGFET) for label-free, real-time quantification of HSA under non-Faradaic operation. Devices exploit the high interfacial capacitance of the electric double layer (EDL) to transduce electrostatic perturbations induced by albumin adsorption into measurable conductance modulation. Negatively charged HSA molecules induce systematic modulation of the graphene channel, producing a concentration-dependent displacement of the Dirac voltage consistent with p-type doping. To establish a molecular-level interpretation of the sensing response, Brownian Dynamics simulations show that HSA adsorbs onto graphene through multiple adsorption orientations associated with heterogeneous interfacial charge distributions and variable dipole alignments relative to the surface. Adsorption is energetically stabilized by van der Waals interactions. Analysis of transfer characteristics across concentrations ranging from 0.01 to 30mgmL-1 reveals a correlation between surface charge density and carrier transport modulation within the electric double layer. Optimized devices exhibit a limit of detection of 0.0087 mg mL-1 and a linear dynamic range extending to 10 mg mL-1. The response remains non-Faradaic under sub-volt operation with reversible and reproducible behavior. The use of an inverse-mobility analytical metric highlights the role of disorder-enhanced carrier scattering in signal amplification, enabling sensitive electrostatic detection while preserving reversible device operation. These results establish liquid-gated graphene EGFETs as a promising platform for quantitative protein sensing and provide insight into disorder-mediated transport mechanisms in graphene bioelectronic devices.

cond-mat.mes-hall

InAs Nanowire-Based Twin Electrical Sensors enabling Simultaneous Gas Detection Measurements: Nanodevice Engineering, Testing and Signal Fluctuation Analysis

Epitaxially grown InAs NWs are relevant for electrical sensing applications due to Fermi level pinning at NW surface, thus very sensitive to surrounding environment. While a single NW growth batch consists of millions virtually identical replicas of the same NW, real samples display subtle differences in NW size, shape, structure which may affect the detection performance. Here, electrical gas detection is investigated the in two NW-based nominally identical or twin devices fabricated starting from the same NW growth batch. Two individual wurtzite InAs NWs are placed onto a fabrication substrate at 2 micrometers distance with 90 degrees relative orientation, each NW is electrically contacted, and the nanodevices are exposed to humidity and NO$_2$ flux diluted in synthetic air. Electrical signal versus time is measured simultaneously in each nanodevice, upon different gases and concentrations. Observed detection limit is 2 ppm for NO$_2$, 20% for relative humidity. Correlation analysis method is exploited by calculating auto- and cross-correlation functions for the experimental signal pairs, indicating lack of cross-correlation in the signal noise of the two nanodevices, suggesting that signal differences could be ascribed mainly to nonidealities of fabrication protocol and nanoscopic differences in the two nanostructures, rather than different environmental conditions.

cond-mat.mes-hall